Ajith Varghese

Person

McKinnery, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor performance using a two-step damage anneal
- Patent number 9,054,056
- Issue date Jun 9, 2015
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance using a two-step damage anneal
- Patent number 9,029,251
- Issue date May 12, 2015
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance using a two-step damage anneal
- Patent number 8,828,855
- Issue date Sep 9, 2014
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigation of gate to contact capacitance in CMOS flow
- Patent number 8,119,470
- Issue date Feb 21, 2012
- Texas Instruments Incorporated
- Shashank Sureshchandra Ekbote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Border region defect reduction in hybrid orientation technology (HO...
- Patent number 7,855,111
- Issue date Dec 21, 2010
- Texas Instruments Incorporated
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective liners for semiconductor fabrication
- Patent number 7,838,370
- Issue date Nov 23, 2010
- Texas Instruments Incorporated
- Narendra Singh Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature polysilicon oxide process for high-K dielectric/met...
- Patent number 7,723,173
- Issue date May 25, 2010
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufactured using a non-contact implant metro...
- Patent number 7,696,021
- Issue date Apr 13, 2010
- Texas Instruments Incorporated
- Narendra Singh Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal treatment of nitrided oxide to improve negative bias therma...
- Patent number 7,682,988
- Issue date Mar 23, 2010
- Texas Instruments Incorporated
- Husam N. Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device having different amounts of nitrogen in the NMOS gate d...
- Patent number 7,514,308
- Issue date Apr 7, 2009
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to obtain uniform nitrogen profile in gate dielectrics
- Patent number 7,435,651
- Issue date Oct 14, 2008
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of improving drive currents by employing strain inducing ST...
- Patent number 7,396,728
- Issue date Jul 8, 2008
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain modulation employing process techniques for CMOS technologies
- Patent number 7,384,861
- Issue date Jun 10, 2008
- Texas Instruments Incorporated
- Narendra Singh Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device having different amounts of nitrogen in the NMOS gate d...
- Patent number 7,227,201
- Issue date Jun 5, 2007
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removal of hydrocarbon contamination on gate oxide prior...
- Patent number 6,924,239
- Issue date Aug 2, 2005
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL
- Publication number 20140342521
- Publication date Nov 20, 2014
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL
- Publication number 20140339609
- Publication date Nov 20, 2014
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORDER REGION DEFECT REDUCTION IN HYBRID ORIENTATION TECHNOLOGY (HO...
- Publication number 20100032727
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE POLYSILICON OXIDE PROCESS FOR HIGH-K DIELECTRIC/MET...
- Publication number 20090170346
- Publication date Jul 2, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methodology for Reducing Post Burn-In Vmin Drift
- Publication number 20090045472
- Publication date Feb 19, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Srinivasan Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO OBTAIN UNIFORM NITROGEN PROFILE IN GATE DIELECTRICS
- Publication number 20080315324
- Publication date Dec 25, 2008
- TEXAS INSTRUMENTS INCORPORATED
- AJITH VARGHESE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL
- Publication number 20080268627
- Publication date Oct 30, 2008
- Hiroaki NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL
- Publication number 20080268603
- Publication date Oct 30, 2008
- Hiroaki NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED POLY STRUCTURE TO REDUCE THE POLY PARTICLE COUNT IN ADVANCE...
- Publication number 20080251864
- Publication date Oct 16, 2008
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW
- Publication number 20080246099
- Publication date Oct 9, 2008
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mitigation of gate to contact capacitance in CMOS flow
- Publication number 20080230815
- Publication date Sep 25, 2008
- Texas Instruments Inc.
- Shashank Sureshchandra Ekbote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY SELECTIVE LINERS FOR SEMICONDUCTOR FABRICATION
- Publication number 20080217703
- Publication date Sep 11, 2008
- Narendra Singh Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REWORK METHODOLOGY THAT PRESERVES GATE PERFORMANCE
- Publication number 20080076076
- Publication date Mar 27, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Yaw Samuel Obeng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor Device Manufactured Using a Non-Contact Implant Metro...
- Publication number 20080006886
- Publication date Jan 10, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Narendra Singh Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS Device Having Different Amounts of Nitrogen in the NMOS Gate D...
- Publication number 20070207572
- Publication date Sep 6, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to obtain uniform nitrogen profile in gate dielectrics
- Publication number 20070054455
- Publication date Mar 8, 2007
- Texas Instruments Inc.
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain modulation employing process techniques for CMOS technologies
- Publication number 20070015347
- Publication date Jan 18, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Narendra Singh Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of improving drive currents by employing strain inducing ST...
- Publication number 20070004118
- Publication date Jan 4, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device having different amounts of nitrogen in the NMOS gate d...
- Publication number 20060043369
- Publication date Mar 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal treatment of nitrided oxide to improve negative bias therma...
- Publication number 20060046514
- Publication date Mar 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Husam N. Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVAL OF HYDROCARBON CONTAMINATION ON GATE OXIDE PRIOR...
- Publication number 20050079723
- Publication date Apr 14, 2005
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitridation process for independent control of device gate leakage...
- Publication number 20040262701
- Publication date Dec 30, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Husam N. Alshareef
- H01 - BASIC ELECTRIC ELEMENTS

Ajith Varghese

Person

Patents Grantslast 30 patents

Transistor performance using a two-step damage anneal

Transistor performance using a two-step damage anneal

Transistor performance using a two-step damage anneal

Mitigation of gate to contact capacitance in CMOS flow

Border region defect reduction in hybrid orientation technology (HO...

Highly selective liners for semiconductor fabrication

Low temperature polysilicon oxide process for high-K dielectric/met...

Semiconductor device manufactured using a non-contact implant metro...

Thermal treatment of nitrided oxide to improve negative bias therma...

CMOS device having different amounts of nitrogen in the NMOS gate d...

Method to obtain uniform nitrogen profile in gate dielectrics

Methods of improving drive currents by employing strain inducing ST...

Strain modulation employing process techniques for CMOS technologies

CMOS device having different amounts of nitrogen in the NMOS gate d...

Method for removal of hydrocarbon contamination on gate oxide prior...

Patents Applicationslast 30 patents

TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL

TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL

BORDER REGION DEFECT REDUCTION IN HYBRID ORIENTATION TECHNOLOGY (HO...

LOW TEMPERATURE POLYSILICON OXIDE PROCESS FOR HIGH-K DIELECTRIC/MET...

Methodology for Reducing Post Burn-In Vmin Drift

METHOD TO OBTAIN UNIFORM NITROGEN PROFILE IN GATE DIELECTRICS

TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL

TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL

STACKED POLY STRUCTURE TO REDUCE THE POLY PARTICLE COUNT IN ADVANCE...

LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW

Mitigation of gate to contact capacitance in CMOS flow

HIGHLY SELECTIVE LINERS FOR SEMICONDUCTOR FABRICATION

REWORK METHODOLOGY THAT PRESERVES GATE PERFORMANCE

Semiconductor Device Manufactured Using a Non-Contact Implant Metro...

CMOS Device Having Different Amounts of Nitrogen in the NMOS Gate D...

Method to obtain uniform nitrogen profile in gate dielectrics

Strain modulation employing process techniques for CMOS technologies

Methods of improving drive currents by employing strain inducing ST...

CMOS device having different amounts of nitrogen in the NMOS gate d...

Thermal treatment of nitrided oxide to improve negative bias therma...

METHOD FOR REMOVAL OF HYDROCARBON CONTAMINATION ON GATE OXIDE PRIOR...

Nitridation process for independent control of device gate leakage...