Akihiko Ishibashi

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
ScAlMgO4 monocrystalline substrate, and method of manufacture thereof
- Patent number 11,643,752
- Issue date May 9, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Kentaro Miyano
- C30 - CRYSTAL GROWTH
Information Patent Grant
RAMO4 substrate and method of manufacture thereof, and group III ni...
- Patent number 11,441,237
- Issue date Sep 13, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Naoya Ryoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wavelength conversion device
- Patent number 11,437,773
- Issue date Sep 6, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Naoya Ryoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RAMO4 substrate and manufacturing method thereof
- Patent number 11,370,076
- Issue date Jun 28, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yoshifumi Takasu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor light emitting diode, and method fo...
- Patent number 11,335,839
- Issue date May 17, 2022
- Panasonic Corporation
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wavelength converter
- Patent number 10,989,985
- Issue date Apr 27, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Kentaro Miyano
- G02 - OPTICS
Information Patent Grant
Group III nitride semiconductor and method for producing same
- Patent number 10,923,346
- Issue date Feb 16, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Akihiko Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor with InGaN diffusion blocking layer
- Patent number 10,886,435
- Issue date Jan 5, 2021
- Panasonic Corporation
- Akihiko Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RAMO4 substrate and manufacturing method thereof
- Patent number 10,350,725
- Issue date Jul 16, 2019
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yoshifumi Takasu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group III nitride semiconductor and method for producing same
- Patent number 9,899,564
- Issue date Feb 20, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Akihiko Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor, and method for producing same
- Patent number 9,899,213
- Issue date Feb 20, 2018
- Panasonic Corporation
- Akio Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor device and production method thereof
- Patent number 8,981,340
- Issue date Mar 17, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yasutoshi Kawaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting element and method for manufacturing same
- Patent number 8,222,670
- Issue date Jul 17, 2012
- Panasonic Corporation
- Naomi Anzue
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor laser and method for fabricating the same
- Patent number 8,198,637
- Issue date Jun 12, 2012
- Panasonic Corporation
- Gaku Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device comprising multiple sem...
- Patent number 8,044,430
- Issue date Oct 25, 2011
- Panasonic Corporation
- Akihiko Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting element and method for manufacturing same
- Patent number 8,030,677
- Issue date Oct 4, 2011
- Panasonic Corporation
- Naomi Anzue
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light source, optical pickup, and electronic apparatus
- Patent number 8,018,134
- Issue date Sep 13, 2011
- Panasonic Corporation
- Isao Kidoguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 7,852,891
- Issue date Dec 14, 2010
- Panasonic Corporation
- Yoshiaki Hasegawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor device and process for producing the same
- Patent number 7,846,820
- Issue date Dec 7, 2010
- Panasonic Corporation
- Akihiko Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor device and method for manufacturing same
- Patent number 7,816,696
- Issue date Oct 19, 2010
- Panasonic Corporation
- Yoshiaki Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for fabricating the same
- Patent number 7,704,860
- Issue date Apr 27, 2010
- Panasonic Corporation
- Toshitaka Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating the same
- Patent number 7,606,276
- Issue date Oct 20, 2009
- Panasonic Corporation
- Yoshiaki Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride substrate
- Patent number 7,524,691
- Issue date Apr 28, 2009
- Panasonic Corporation
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 7,501,667
- Issue date Mar 10, 2009
- Panasonic Corporation
- Yoshiaki Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and fabrication method thereof
- Patent number 7,470,608
- Issue date Dec 30, 2008
- Panasonics Corporation
- Akihiko Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light source, optical pickup, and electronic apparatus
- Patent number 7,407,421
- Issue date Aug 5, 2008
- Matsushita Electric Industrial Co., Ltd.
- Isao Kidoguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element and method for fabricating the...
- Patent number 7,368,766
- Issue date May 6, 2008
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laser and method for fabricating the same
- Patent number 7,338,827
- Issue date Mar 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Gaku Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride substrate and semiconduct...
- Patent number 7,221,037
- Issue date May 22, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing Group III nitride substrate and semiconduct...
- Patent number 7,176,115
- Issue date Feb 13, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LASER OSCILLATOR AND LASER PROCESSING METHOD
- Publication number 20210234337
- Publication date Jul 29, 2021
- Panasonic Intellectual Property Management Co., Ltd.
- TAKAAKI KASSAI
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
- Publication number 20210006042
- Publication date Jan 7, 2021
- Panasonic Intellectual Property Management Co., Ltd.
- AKIHIKO ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVELENGTH CONVERSION DEVICE
- Publication number 20200388981
- Publication date Dec 10, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- NAOYA RYOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVELENGTH CONVERTER
- Publication number 20200387047
- Publication date Dec 10, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- KENTARO MIYANO
- G02 - OPTICS
Information Patent Application
ScAlMgO4 MONOCRYSTALLINE SUBSTRATE, AND METHOD OF MANUFACTURE THEREOF
- Publication number 20200263319
- Publication date Aug 20, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- KENTARO MIYANO
- C30 - CRYSTAL GROWTH
Information Patent Application
RAMO4 SUBSTRATE AND METHOD OF MANUFACTURE THEREOF, AND GROUP III NI...
- Publication number 20200181801
- Publication date Jun 11, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- NAOYA RYOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR AND METHOD FOR PRODUCING SAME
- Publication number 20200135447
- Publication date Apr 30, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- Akihiko ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200075810
- Publication date Mar 5, 2020
- PANASONIC CORPORATION
- Akihiko ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
User terminal and wireless communication method
- Publication number 20200014431
- Publication date Jan 9, 2020
- PANASONIC CORPORATION
- Hiroshi ONO
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR, AND METHOD FOR PRODUCING SAME
- Publication number 20170338101
- Publication date Nov 23, 2017
- PANASONIC CORPORATION
- Akio UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR AND METHOD FOR PRODUCING SAME
- Publication number 20170279003
- Publication date Sep 28, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- AKIHIKO ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20170239779
- Publication date Aug 24, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- Yoshifumi TAKASU
- C30 - CRYSTAL GROWTH
Information Patent Application
RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20170239772
- Publication date Aug 24, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- YOSHIFUMI TAKASU
- C30 - CRYSTAL GROWTH
Information Patent Application
RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20170239773
- Publication date Aug 24, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- YOSHIFUMI TAKASU
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20130223463
- Publication date Aug 29, 2013
- PANASONIC CORPORATION
- Yasutoshi KAWAGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20110272670
- Publication date Nov 10, 2011
- PANASONIC CORPORATION
- Yasutoshi KAWAGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20110215340
- Publication date Sep 8, 2011
- PANASONIC CORPORATION
- Naomi Anzue
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20110182310
- Publication date Jul 28, 2011
- PANASONIC CORPORATION
- Tomohito Yabushita
- B82 - NANO-TECHNOLOGY
Information Patent Application
LIGHT-EMITTING DEVICE
- Publication number 20100259184
- Publication date Oct 14, 2010
- Ryou Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20100148145
- Publication date Jun 17, 2010
- Akihiko Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20100118905
- Publication date May 13, 2010
- Tomohito YABUSHITA
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20090294797
- Publication date Dec 3, 2009
- Naomi Anzue
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE...
- Publication number 20090159924
- Publication date Jun 25, 2009
- PANASONIC CORPORATION
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20090059983
- Publication date Mar 5, 2009
- Matsushita Electric Industrial Co., Ltd.
- Yoshiaki Hasegawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20090022193
- Publication date Jan 22, 2009
- Yoshiaki Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT SOURCE, OPTICAL PICKUP, AND ELECTRONIC APPARATUS
- Publication number 20080315231
- Publication date Dec 25, 2008
- Matsushita Electric Industrial Co. Ltd.
- Isao Kidoguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride-Based Semiconductor Device and Method for Fabricating the Same
- Publication number 20080272462
- Publication date Nov 6, 2008
- Toshitaka Shimamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Device and Method for Fabricating the Same
- Publication number 20080273562
- Publication date Nov 6, 2008
- Yoshiaki Hasegawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME
- Publication number 20080049806
- Publication date Feb 28, 2008
- Gaku Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Device And Production Method Thereof
- Publication number 20070290230
- Publication date Dec 20, 2007
- Yasutoshi Kawaguchi
- B82 - NANO-TECHNOLOGY

Akihiko Ishibashi

Person

Patents Grantslast 30 patents

ScAlMgO4 monocrystalline substrate, and method of manufacture thereof

RAMO4 substrate and method of manufacture thereof, and group III ni...

Wavelength conversion device

RAMO4 substrate and manufacturing method thereof

Group III nitride semiconductor light emitting diode, and method fo...

Wavelength converter

Group III nitride semiconductor and method for producing same

Group III nitride semiconductor with InGaN diffusion blocking layer

RAMO4 substrate and manufacturing method thereof

Group III nitride semiconductor and method for producing same

Group III nitride semiconductor, and method for producing same

Nitride semiconductor device and production method thereof

Semiconductor light emitting element and method for manufacturing same

Nitride semiconductor laser and method for fabricating the same

Nitride semiconductor light-emitting device comprising multiple sem...

Semiconductor light emitting element and method for manufacturing same

Light source, optical pickup, and electronic apparatus

Nitride semiconductor light-emitting device

Nitride semiconductor device and process for producing the same

Nitride semiconductor device and method for manufacturing same

Nitride-based semiconductor device and method for fabricating the same

Nitride semiconductor device and method for fabricating the same

Method of manufacturing group III nitride substrate

Nitride semiconductor light-emitting device

Semiconductor light emitting device and fabrication method thereof

Light source, optical pickup, and electronic apparatus

Semiconductor light emitting element and method for fabricating the...

Nitride semiconductor laser and method for fabricating the same

Method of manufacturing group III nitride substrate and semiconduct...

Method of manufacturing Group III nitride substrate and semiconduct...

Patents Applicationslast 30 patents

LASER OSCILLATOR AND LASER PROCESSING METHOD

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE

WAVELENGTH CONVERSION DEVICE

WAVELENGTH CONVERTER

ScAlMgO4 MONOCRYSTALLINE SUBSTRATE, AND METHOD OF MANUFACTURE THEREOF

RAMO4 SUBSTRATE AND METHOD OF MANUFACTURE THEREOF, AND GROUP III NI...

GROUP III NITRIDE SEMICONDUCTOR AND METHOD FOR PRODUCING SAME

GROUP III NITRIDE SEMICONDUCTOR

User terminal and wireless communication method

GROUP III NITRIDE SEMICONDUCTOR, AND METHOD FOR PRODUCING SAME

GROUP III NITRIDE SEMICONDUCTOR AND METHOD FOR PRODUCING SAME

RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF

RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF

RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF

LIGHT-EMITTING DEVICE

NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE...

NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

LIGHT SOURCE, OPTICAL PICKUP, AND ELECTRONIC APPARATUS

Nitride-Based Semiconductor Device and Method for Fabricating the Same

Nitride Semiconductor Device and Method for Fabricating the Same

NITRIDE SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME

Nitride Semiconductor Device And Production Method Thereof