Akihiko Kobayashi

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Sagamihara-city, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
- Patent number 8,476,149
- Issue date Jul 2, 2013
- Global Wafers Japan Co., Ltd.
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer fabricating method and silicon single...
- Patent number 7,048,796
- Issue date May 23, 2006
- Toshiba Ceramics Co., Ltd.
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating a single crystal ingot and method of fabricat...
- Patent number 6,517,632
- Issue date Feb 11, 2003
- Toshiba Ceramics Co., Ltd.
- Toshirou Minami
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
- Publication number 20100038757
- Publication date Feb 18, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer fabricating method and silicon single...
- Publication number 20050039671
- Publication date Feb 24, 2005
- TOSHIBA CERAMICS CO., LTD.
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer fabricating method and silicon single...
- Publication number 20030029375
- Publication date Feb 13, 2003
- TOSHIBA CERAMICS CO., LTD.
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of fabricating a single crystal ingot and method of fabricat...
- Publication number 20010029883
- Publication date Oct 18, 2001
- Toshirou Minami
- C30 - CRYSTAL GROWTH