Akihito Ohno

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...
- Patent number 10,950,435
- Issue date Mar 16, 2021
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...
- Patent number 10,910,218
- Issue date Feb 2, 2021
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for silicon carbide epitaxial wafer and manufa...
- Patent number 10,858,758
- Issue date Dec 8, 2020
- Mitsubishi Electric Corporation
- Akihito Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer manufacturing method, silicon carbi...
- Patent number 10,711,372
- Issue date Jul 14, 2020
- Mitsubishi Electric Corporation
- Akihito Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer manufacturing method, silicon carbi...
- Patent number 10,370,775
- Issue date Aug 6, 2019
- Mitsubishi Electric Corporation
- Akihito Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,957,638
- Issue date May 1, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,903,048
- Issue date Feb 27, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate support and semiconductor manufacturing apparatus
- Patent number 9,824,911
- Issue date Nov 21, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a single-crystal 4H—SiC substrate
- Patent number 9,752,254
- Issue date Sep 5, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method and apparatus for manufacturing silicon carbid...
- Patent number 9,564,315
- Issue date Feb 7, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- B08 - CLEANING
Information Patent Grant
Method of manufacturing semiconductor element
- Patent number 9,478,418
- Issue date Oct 25, 2016
- Mitsubishi Electric Corporation
- Atsushi Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,422,640
- Issue date Aug 23, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of high electron mobility transistor
- Patent number 9,355,841
- Issue date May 31, 2016
- Mitsubishi Electric Corporation
- Takahiro Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 8,731,018
- Issue date May 20, 2014
- Mitsubishi Electric Corporation
- Kimio Shigihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 8,263,999
- Issue date Sep 11, 2012
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for production of a nitride semiconductor laminated structur...
- Patent number 7,923,742
- Issue date Apr 12, 2011
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 7,825,012
- Issue date Nov 2, 2010
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor stacked structure an...
- Patent number 7,763,486
- Issue date Jul 27, 2010
- Mitsubishi Electric Corporation
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 7,632,695
- Issue date Dec 15, 2009
- Mitsubishi Denki Kabushiki Kaisha
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor light emitting device
- Patent number 7,172,429
- Issue date Feb 6, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Tomita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFA...
- Publication number 20200017991
- Publication date Jan 16, 2020
- Mitsubishi Electric Corporation
- Akihito OHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER,...
- Publication number 20200020528
- Publication date Jan 16, 2020
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...
- Publication number 20190284718
- Publication date Sep 19, 2019
- Mitsubishi Electric Corporation
- Akihito OHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...
- Publication number 20170314160
- Publication date Nov 2, 2017
- Mitsubishi Electric Corporation
- Akihito OHNO
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBID...
- Publication number 20170040166
- Publication date Feb 9, 2017
- Mitsubishi Electric Corporation
- Akihito OHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298262
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298264
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20160071727
- Publication date Mar 10, 2016
- Mitsubishi Electric Corporation
- Takahiro YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
- Publication number 20150348780
- Publication date Dec 3, 2015
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150267320
- Publication date Sep 24, 2015
- Mitsubishi Electric Corporation
- Akihito OHNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140295136
- Publication date Oct 2, 2014
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE SUPPORT AND SEMICONDUCTOR MANUFACTURING APPARATUS
- Publication number 20130327274
- Publication date Dec 12, 2013
- Mitsubishi Electric Corporation
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20120322245
- Publication date Dec 20, 2012
- Mitsubishi Electric Corporation
- Akihito OHNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER
- Publication number 20120195337
- Publication date Aug 2, 2012
- Mitsubishi Electric Corporation
- Kimio Shigihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20110177678
- Publication date Jul 21, 2011
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20110177679
- Publication date Jul 21, 2011
- Mitsubishi Electric Corporation
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICES
- Publication number 20100289056
- Publication date Nov 18, 2010
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20100075483
- Publication date Mar 25, 2010
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE AND OPTICAL SEMICONDUCTOR...
- Publication number 20090236589
- Publication date Sep 24, 2009
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR STACKED STRUCTURE AND SEMICONDUCTOR OPTICAL D...
- Publication number 20090008659
- Publication date Jan 8, 2009
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20080251804
- Publication date Oct 16, 2008
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICES
- Publication number 20080073660
- Publication date Mar 27, 2008
- Mitsubishi Electric Corporation
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20080070387
- Publication date Mar 20, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Akihito Ohno
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light emitting device and manufacturing method thereof
- Publication number 20060166392
- Publication date Jul 27, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Tomita
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and semiconductor device manufacturing method
- Publication number 20060086948
- Publication date Apr 27, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Akihito Ohno
- B82 - NANO-TECHNOLOGY

Akihito Ohno

Person

Patents Grantslast 30 patents

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...

Manufacturing method for silicon carbide epitaxial wafer and manufa...

Silicon carbide epitaxial wafer manufacturing method, silicon carbi...

Silicon carbide epitaxial wafer manufacturing method, silicon carbi...

Method for manufacturing silicon carbide semiconductor device

Single-crystal 4H-SiC substrate

Substrate support and semiconductor manufacturing apparatus

Method for manufacturing a single-crystal 4H—SiC substrate

Manufacturing method and apparatus for manufacturing silicon carbid...

Method of manufacturing semiconductor element

Single-crystal 4H-SiC substrate

Manufacturing method of high electron mobility transistor

Semiconductor laser

Nitride semiconductor light-emitting device

Method for production of a nitride semiconductor laminated structur...

Method for manufacturing nitride semiconductor device

Method for manufacturing nitride semiconductor stacked structure an...

Semiconductor device manufacturing method

Method of manufacturing semiconductor light emitting device

Patents Applicationslast 30 patents

MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFA...

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER,...

SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...

SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...

MANUFACTURING METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBID...

METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE

MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR

METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SUBSTRATE SUPPORT AND SEMICONDUCTOR MANUFACTURING APPARATUS

METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR LASER

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR LIGHT-EMITTING DEVICES

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE AND OPTICAL SEMICONDUCTOR...

NITRIDE SEMICONDUCTOR STACKED STRUCTURE AND SEMICONDUCTOR OPTICAL D...

NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

SEMICONDUCTOR LIGHT-EMITTING DEVICES

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Semiconductor light emitting device and manufacturing method thereof

Semiconductor device and semiconductor device manufacturing method