Akihito Ono

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer and manufacturing method of the same
- Patent number 10,964,785
- Issue date Mar 30, 2021
- Mitsubishi Electric Corporation
- Yoichiro Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC epitaxial wafer
- Patent number 9,988,738
- Issue date Jun 5, 2018
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor laser device
- Patent number 8,238,397
- Issue date Aug 7, 2012
- Mitsubishi Electric Corporation
- Kimio Shigihara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200066847
- Publication date Feb 27, 2020
- Mitsubishi Electric Corporation
- Yoichiro MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER PRODUCTION METHOD
- Publication number 20150354090
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Nobuyuki TOMITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LASER DEVICE
- Publication number 20110128986
- Publication date Jun 2, 2011
- Mitsubishi Electric Corporation
- Kimio Shigihara
- H01 - BASIC ELECTRIC ELEMENTS