Akimichi Hojo

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of making a GaAs JFET with self-aligned p-type gate by outdi...
- Patent number 5,015,596
- Issue date May 14, 1991
- Kabushiki Kaisha Toshiba
- Nobuyuki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate array integrated circuit using Schottky-barrier FETs
- Patent number 4,663,646
- Issue date May 5, 1987
- Kabushiki Kaisha Toshiba
- Yasuo Ikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing method of Schottky gate FET
- Patent number 4,569,119
- Issue date Feb 11, 1986
- Kabushiki Kaisha Toshiba
- Toshiyuki Terada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga/As NOR/NAND gate circuit using enhancement mode FET's
- Patent number 4,518,871
- Issue date May 21, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Nobuyuki Toyoda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Process for manufacturing a buried gate field effect transistor
- Patent number 4,503,600
- Issue date Mar 12, 1985
- Tokyo Shibaura Denki Kabushiki
- Riro Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a Schottky gate field effect transistor
- Patent number 4,472,872
- Issue date Sep 25, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Nobuyuki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS