Akio Wakejima

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor, and multilayered epitaxial film for use in...
- Patent number 9,954,087
- Issue date Apr 24, 2018
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, and multilayered epitaxial film for use in...
- Patent number 8,853,666
- Issue date Oct 7, 2014
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency power amplifier
- Patent number 8,476,980
- Issue date Jul 2, 2013
- NEC Corporation
- Akio Wakejima
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and heat sink with 3-dimensional thermal condu...
- Patent number 8,476,756
- Issue date Jul 2, 2013
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced gate leakage current
- Patent number 8,466,495
- Issue date Jun 18, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced gate leakage current
- Patent number 8,198,652
- Issue date Jun 12, 2012
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and heat sink with 3-dimensional thermal condu...
- Patent number 8,063,484
- Issue date Nov 22, 2011
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,863,648
- Issue date Jan 4, 2011
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,800,131
- Issue date Sep 21, 2010
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20180233590
- Publication date Aug 16, 2018
- RENESAS ELECTRONICS CORPORATION
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20140367743
- Publication date Dec 18, 2014
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT
- Publication number 20120217547
- Publication date Aug 30, 2012
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY POWER AMPLIFIER
- Publication number 20120188010
- Publication date Jul 26, 2012
- NEC Corporation
- Akio Wakejima
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20120012995
- Publication date Jan 19, 2012
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20100224910
- Publication date Sep 9, 2010
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20100007013
- Publication date Jan 14, 2010
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090230429
- Publication date Sep 17, 2009
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor
- Publication number 20090173968
- Publication date Jul 9, 2009
- NEC Corporation
- Kouji Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20090045438
- Publication date Feb 19, 2009
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky gate field effect transistor with high output characteristic
- Publication number 20020171096
- Publication date Nov 21, 2002
- NEC Corporation
- Akio Wakejima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for production of gate electrode and gate electrode structure
- Publication number 20020025664
- Publication date Feb 28, 2002
- NEC Corporation
- Akio Wakejima
- H01 - BASIC ELECTRIC ELEMENTS

Akio Wakejima

Person

Patents Grantslast 30 patents

Field effect transistor, and multilayered epitaxial film for use in...

Field effect transistor, and multilayered epitaxial film for use in...

High frequency power amplifier

Semiconductor device and heat sink with 3-dimensional thermal condu...

Field effect transistor with reduced gate leakage current

Field effect transistor with reduced gate leakage current

Semiconductor device and heat sink with 3-dimensional thermal condu...

Field effect transistor

Field effect transistor

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT

HIGH FREQUENCY POWER AMPLIFIER

Semiconductor device

FIELD EFFECT TRANSISTOR

Semiconductor device

Field effect transistor

Field Effect Transistor

FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

Schottky gate field effect transistor with high output characteristic

Process for production of gate electrode and gate electrode structure