Akira Katakami

Person

Kuwana, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,865,734
- Issue date Jan 9, 2018
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,728,468
- Issue date Aug 8, 2017
- Fujitsu Semiconductor Limited
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,577,098
- Issue date Feb 21, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,401,427
- Issue date Jul 26, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,257,425
- Issue date Feb 9, 2016
- Fujitsu Semiconductor Limited
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,112,027
- Issue date Aug 18, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,853,673
- Issue date Oct 7, 2014
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 8,786,022
- Issue date Jul 22, 2014
- Fujitsu Semiconductor Limited
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 8,575,704
- Issue date Nov 5, 2013
- Fujitsu Semiconductor Limited
- Masaki Haneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,518,785
- Issue date Aug 27, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,466,450
- Issue date Jun 18, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,421,155
- Issue date Apr 16, 2013
- Fujitsu Semiconductor Limited
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,278,177
- Issue date Oct 2, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,207,042
- Issue date Jun 26, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 8,164,085
- Issue date Apr 24, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and fabrication process thereof
- Patent number 8,158,498
- Issue date Apr 17, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,968,414
- Issue date Jun 28, 2011
- Fujitsu Semiconductor Limited
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,875,521
- Issue date Jan 25, 2011
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with compressive and tensile stresses
- Patent number 7,816,766
- Issue date Oct 19, 2010
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 7,791,064
- Issue date Sep 7, 2010
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,683,362
- Issue date Mar 23, 2010
- Fujitsu Microelectronics Limited
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 7,667,227
- Issue date Feb 23, 2010
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor, semiconductor integrated circuit device a...
- Patent number 7,649,232
- Issue date Jan 19, 2010
- Fujitsu Microelectronics Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,626,215
- Issue date Dec 1, 2009
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,579,617
- Issue date Aug 25, 2009
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and fabrication process thereof
- Patent number 7,518,188
- Issue date Apr 14, 2009
- Fujitsu Microelectronics Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and fabrication process the...
- Patent number 7,476,941
- Issue date Jan 13, 2009
- Fujitsu Microelectronics Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit and fabrication process thereof
- Patent number 7,378,305
- Issue date May 27, 2008
- Fujitsu Limited
- Akiyoshi Hatada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and fabrication process thereof
- Patent number 7,262,465
- Issue date Aug 28, 2007
- Fujitsu Limited
- Akiyoshi Hatada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and fabrication process the...
- Patent number 7,202,120
- Issue date Apr 10, 2007
- Fujitsu Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20170117412
- Publication date Apr 27, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160308053
- Publication date Oct 20, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20160133527
- Publication date May 12, 2016
- FUJITSU SEMICONDUCTOR LIMITED
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150295086
- Publication date Oct 15, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20140367791
- Publication date Dec 18, 2014
- FUJITSU SEMICONDUCTOR LIMITED
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140361340
- Publication date Dec 11, 2014
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20140051222
- Publication date Feb 20, 2014
- FUJITSU SEMICONDUCTOR LIMITED
- MASANORI TERAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20130248930
- Publication date Sep 26, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120329229
- Publication date Dec 27, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20120261760
- Publication date Oct 18, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masaki Haneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20120193717
- Publication date Aug 2, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Akira KATAKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120009750
- Publication date Jan 12, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110254106
- Publication date Oct 20, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Akira Katakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20110049533
- Publication date Mar 3, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20100301394
- Publication date Dec 2, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20100129971
- Publication date May 27, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100015774
- Publication date Jan 21, 2010
- Fujitsu Microelectronics Limited
- Yosuke SHIMAMUNE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and production method thereof
- Publication number 20090280612
- Publication date Nov 12, 2009
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel MOS transistor and fabrication process thereof
- Publication number 20090176343
- Publication date Jul 9, 2009
- Fujitsu Microelectronics Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof
- Publication number 20090134381
- Publication date May 28, 2009
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090075477
- Publication date Mar 19, 2009
- Fujitsu Microelectronics Limited
- Kazuo KAWAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20080023773
- Publication date Jan 31, 2008
- FUJITSU LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device and fabrication process the...
- Publication number 20070148835
- Publication date Jun 28, 2007
- FUJITSU LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and semiconductor device manufacturing method
- Publication number 20070126036
- Publication date Jun 7, 2007
- FUJITSU LIMITED
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and production method thereof
- Publication number 20070012913
- Publication date Jan 18, 2007
- FUJITSU LIMITED
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and production method thereof
- Publication number 20060289856
- Publication date Dec 28, 2006
- FUJITSU LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel MOS transistor, semiconductor integrated circuit device a...
- Publication number 20060220113
- Publication date Oct 5, 2006
- FUJITSU LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel MOS transistor and fabrication process thereof
- Publication number 20060202280
- Publication date Sep 14, 2006
- FUJITSU LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT AND CMOS TRANSISTOR
- Publication number 20060202278
- Publication date Sep 14, 2006
- FUJITSU LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device and fabrication process the...
- Publication number 20060186557
- Publication date Aug 24, 2006
- FUJITSU LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS

Akira Katakami

Person

Patents Grantslast 30 patents

Semiconductor device and fabrication method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and semiconductor device manufacturing method

Semiconductor device and manufacturing method of the semiconductor...

Semiconductor device and method of manufacturing the same

Semiconductor device and fabrication method thereof

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and production method thereof

P-channel MOS transistor and fabrication process thereof

Semiconductor device and production method thereof

Semiconductor device and production method thereof

Semiconductor device with compressive and tensile stresses

Semiconductor device and fabrication method thereof

Semiconductor device and production method thereof

Semiconductor device and fabrication method thereof

P-channel MOS transistor, semiconductor integrated circuit device a...

Semiconductor device and method of manufacturing the same

Semiconductor device and production method thereof

P-channel MOS transistor and fabrication process thereof

Semiconductor integrated circuit device and fabrication process the...

Semiconductor integrated circuit and fabrication process thereof

P-channel MOS transistor and fabrication process thereof

Semiconductor integrated circuit device and fabrication process the...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and production method thereof

P-channel MOS transistor and fabrication process thereof

Semiconductor device and fabrication method thereof

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Semiconductor device and method of manufacturing the same

Semiconductor integrated circuit device and fabrication process the...

Semiconductor device and semiconductor device manufacturing method

Semiconductor device and production method thereof

Semiconductor device and production method thereof

P-channel MOS transistor, semiconductor integrated circuit device a...

P-channel MOS transistor and fabrication process thereof

SEMICONDUCTOR INTEGRATED CIRCUIT AND CMOS TRANSISTOR

Semiconductor integrated circuit device and fabrication process the...