Akira MATSUDAIRA

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory structure having a back gate electrode
- Patent number 10,355,007
- Issue date Jul 16, 2019
- SanDisk Technologies LLC
- Xiying Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing control gate electrode curvature in three-dimens...
- Patent number 9,589,839
- Issue date Mar 7, 2017
- SanDisk Technologies LLC
- Yusuke Ikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory structure having a back gate electrode
- Patent number 9,576,971
- Issue date Feb 21, 2017
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical NAND and method of making thereof
- Patent number 9,552,991
- Issue date Jan 24, 2017
- SanDisk Technologies LLC
- Akira Matsudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional NAND device having a wavy charge storage layer
- Patent number 9,553,146
- Issue date Jan 24, 2017
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ support structure for line collapse robustness in memory ar...
- Patent number 9,543,139
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Akira Matsudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory structure having a back gate electrode
- Patent number 9,355,727
- Issue date May 31, 2016
- SanDisk Technologies Inc.
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Inverted-T word line and formation for non-volatile storage
- Patent number 9,224,746
- Issue date Dec 29, 2015
- SanDisk Technologies Inc.
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal replacement process for low resistance source contacts in 3D...
- Patent number 9,209,031
- Issue date Dec 8, 2015
- SanDisk Technologies Inc.
- Matthias Baenninger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with control gate oxygen diffusion control and method...
- Patent number 9,177,808
- Issue date Nov 3, 2015
- SanDisk Technologies Inc.
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE
- Publication number 20170098655
- Publication date Apr 6, 2017
- SanDisk Technologies LLC
- Xiying COSTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE
- Publication number 20160163389
- Publication date Jun 9, 2016
- SanDisk Technologies, Inc.
- Yanli ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE
- Publication number 20160163729
- Publication date Jun 9, 2016
- SanDisk Technologies, Inc.
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three Dimensional NAND Device Having a Wavy Charge Storage Layer
- Publication number 20150357413
- Publication date Dec 10, 2015
- SANDISK TECHNOLOGIES INC.
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH VERTICAL NAND AND METHOD OF MAKING THEREOF
- Publication number 20150318298
- Publication date Nov 5, 2015
- SanDisk Technologies, Inc.
- Akira Matsudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FLOATING GATE NAND WITH OFFSET DUAL CONTROL GATES
- Publication number 20150318295
- Publication date Nov 5, 2015
- SanDisk Technologies, Inc.
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU SUPPORT STRUCTURE FOR LINE COLLAPSE ROBUSTNESS IN MEMORY AR...
- Publication number 20150287733
- Publication date Oct 8, 2015
- SANDISK TECHNOLOGIES INC.
- Akira Matsudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Replacement Process For Low Resistance Source Contacts In 3D...
- Publication number 20150255481
- Publication date Sep 10, 2015
- SANDISK TECHNOLOGIES INC.
- Matthias Baenninger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED-T WORD LINE AND FORMATION FOR NON-VOLATILE STORAGE
- Publication number 20140346583
- Publication date Nov 27, 2014
- SANDISK TECHNOLOGIES INC.
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH CONTROL GATE OXYGEN DIFFUSION CONTROL AND METHOD...
- Publication number 20140346584
- Publication date Nov 27, 2014
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS

Akira MATSUDAIRA

Person

Patents Grantslast 30 patents

Three-dimensional memory structure having a back gate electrode

Method of reducing control gate electrode curvature in three-dimens...

Three-dimensional memory structure having a back gate electrode

Trench vertical NAND and method of making thereof

Three dimensional NAND device having a wavy charge storage layer

In-situ support structure for line collapse robustness in memory ar...

Three-dimensional memory structure having a back gate electrode

Inverted-T word line and formation for non-volatile storage

Metal replacement process for low resistance source contacts in 3D...

Memory device with control gate oxygen diffusion control and method...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE

THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE

THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE

Three Dimensional NAND Device Having a Wavy Charge Storage Layer

TRENCH VERTICAL NAND AND METHOD OF MAKING THEREOF

VERTICAL FLOATING GATE NAND WITH OFFSET DUAL CONTROL GATES

IN-SITU SUPPORT STRUCTURE FOR LINE COLLAPSE ROBUSTNESS IN MEMORY AR...

Metal Replacement Process For Low Resistance Source Contacts In 3D...

INVERTED-T WORD LINE AND FORMATION FOR NON-VOLATILE STORAGE

MEMORY DEVICE WITH CONTROL GATE OXYGEN DIFFUSION CONTROL AND METHOD...