Akira Matsushima

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,184,191
- Issue date Jan 22, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 9,777,400
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 9,777,401
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, silicon carbide semiconductor device, an...
- Patent number 9,691,608
- Issue date Jun 27, 2017
- Sumitomo Electric Industries, Ltd
- So Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 9,057,147
- Issue date Jun 16, 2015
- Sumitomo Electric Industries, Ltd
- Jun Genba
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160340796
- Publication date Nov 24, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AN...
- Publication number 20160086798
- Publication date Mar 24, 2016
- Sumitomo Electric Industries, Ltd.
- So Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20160040317
- Publication date Feb 11, 2016
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20160032487
- Publication date Feb 4, 2016
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20160002820
- Publication date Jan 7, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20150233018
- Publication date Aug 20, 2015
- Sumitomo Electric Industries, Ltd.
- Jun Genba
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20150072100
- Publication date Mar 12, 2015
- Sumitomo Electric Industries, Ltd.
- Jun Genba
- C30 - CRYSTAL GROWTH

Akira Matsushima

Person

Patents Grantslast 30 patents

Method for manufacturing silicon carbide single crystal

Method for producing single crystal

Method for producing single crystal

Silicon carbide substrate, silicon carbide semiconductor device, an...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AN...

METHOD FOR PRODUCING SINGLE CRYSTAL

METHOD FOR PRODUCING SINGLE CRYSTAL

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...