AKIRA MINEJI

Person

HSINCHU, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Capping layer for gate electrodes
- Patent number 12,080,779
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 12,051,620
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with material modification and low resistan...
- Patent number 11,854,871
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,728,414
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with air gap and method sealing the air gap
- Patent number 11,688,631
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET fabrication and structure thereof
- Patent number 11,646,234
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with air gap and method sealing the air gap
- Patent number 11,398,404
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,373,910
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 11,373,902
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure for semiconductor device
- Patent number 11,264,485
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Han Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,251,087
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer for gate electrodes
- Patent number 11,164,956
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET fabrication and structure thereof
- Patent number 11,056,393
- Issue date Jul 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with material modification and low resistan...
- Patent number 11,018,053
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with air gap and method sealing the air gap
- Patent number 10,854,503
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 10,692,760
- Issue date Jun 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 10,685,884
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPPING LAYER FOR GUIDE ELECTRODES
- Publication number 20240363726
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTAN...
- Publication number 20240087952
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure With Air Gap And Method Sealing The Air Gap
- Publication number 20230335432
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FINFET FABRICATION AND STRUCTURE THEREOF
- Publication number 20230282520
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure With Air Gap And Method Sealing The Air Gap
- Publication number 20220336262
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220319917
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20220190137
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Han WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...
- Publication number 20220172998
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yasutoshi OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER FOR GATE ELECTRODES
- Publication number 20210384322
- Publication date Dec 9, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chin-Hsiang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for FinFET Fabrication and Structure Thereof
- Publication number 20210327764
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTAN...
- Publication number 20210280459
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20210126106
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Han WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Air Gap and Method Sealing the Air Gap
- Publication number 20210082740
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER FOR GATE ELECTRODES
- Publication number 20210057543
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chin-Hsiang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...
- Publication number 20200303260
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- YASUTOSHI OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...
- Publication number 20200303259
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- YASUTOSHI OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200294851
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for FinFET Fabrication and Structure Thereof
- Publication number 20200105604
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Air Gap and Method Sealing the Air Gap
- Publication number 20200020567
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Material Modification and Low Resistan...
- Publication number 20200006127
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manuracturing Co., Ltd.
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190164820
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190035691
- Publication date Jan 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- YASUTOSHI OKUNO
- H01 - BASIC ELECTRIC ELEMENTS

AKIRA MINEJI

Person

Patents Grantslast 30 patents

Capping layer for gate electrodes

Semiconductor structure and method for manufacturing the same

Semiconductor structure with material modification and low resistan...

Semiconductor device including a Fin-FET and method of manufacturin...

Semiconductor structure with air gap and method sealing the air gap

Method for FinFET fabrication and structure thereof

Semiconductor structure with air gap and method sealing the air gap

Semiconductor device including a Fin-FET and method of manufacturin...

Semiconductor structure and method for manufacturing the same

Spacer structure for semiconductor device

Semiconductor device including a Fin-FET and method of manufacturin...

Capping layer for gate electrodes

Method for FinFET fabrication and structure thereof

Semiconductor structure with material modification and low resistan...

Semiconductor structure with air gap and method sealing the air gap

Semiconductor structure and method for manufacturing the same

Semiconductor device including a Fin-FET and method of manufacturin...

Patents Applicationslast 30 patents

CAPPING LAYER FOR GUIDE ELECTRODES

SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTAN...

Semiconductor Structure With Air Gap And Method Sealing The Air Gap

METHOD FOR FINFET FABRICATION AND STRUCTURE THEREOF

Semiconductor Structure With Air Gap And Method Sealing The Air Gap

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...

CAPPING LAYER FOR GATE ELECTRODES

Method for FinFET Fabrication and Structure Thereof

SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTAN...

SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE

Semiconductor Structure with Air Gap and Method Sealing the Air Gap

CAPPING LAYER FOR GATE ELECTRODES

SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...

SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Method for FinFET Fabrication and Structure Thereof

Semiconductor Structure with Air Gap and Method Sealing the Air Gap

Semiconductor Structure with Material Modification and Low Resistan...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME