Akira Nakada

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional devices with wedge-shaped contact region and meth...
- Patent number 10,290,803
- Issue date May 14, 2019
- SanDisk Technologies LLC
- Michiaki Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device containing etch stop structures for vertica...
- Patent number 10,256,272
- Issue date Apr 9, 2019
- SanDisk Technologies LLC
- Yusuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for vertical bit line structures in three-dim...
- Patent number 9,673,304
- Issue date Jun 6, 2017
- SanDisk Technologies LLC
- Michiaki Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin film transistors with surround gates
- Patent number 9,673,257
- Issue date Jun 6, 2017
- SanDisk Technologies LLC
- Seje Takaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Concave word line and convex interlayer dielectric for protecting a...
- Patent number 9,666,799
- Issue date May 30, 2017
- SanDisk Technologies LLC
- Naohito Yanagida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concave word line and convex interlayer dielectric for protecting a...
- Patent number 9,620,712
- Issue date Apr 11, 2017
- SanDisk Technologies LLC
- Eiji Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite contact via structure containing an upper portion which f...
- Patent number 9,437,543
- Issue date Sep 6, 2016
- SanDisk Technologies LLC
- Akira Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming oxide below control gate in vertical channel thi...
- Patent number 9,368,601
- Issue date Jun 14, 2016
- SanDisk Technologies Inc.
- Michiaki Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile storage having oxide/nitride sidewall
- Patent number 9,281,314
- Issue date Mar 8, 2016
- SanDisk Technologies Inc.
- Takashi Kashimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming sidewall gates
- Patent number 9,177,964
- Issue date Nov 3, 2015
- Sandisk 3D LLC
- Akira Nakada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR VERTICA...
- Publication number 20180374899
- Publication date Dec 27, 2018
- SanDisk Technologies LLC
- Yusuke YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL DEVICES WITH WEDGE-SHAPED CONTACT REGION AND METH...
- Publication number 20180158873
- Publication date Jun 7, 2018
- SanDisk Technologies LLC
- Michiaki SANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE CONTACT VIA STRUCTURE CONTAINING AN UPPER PORTION WHICH F...
- Publication number 20160218059
- Publication date Jul 28, 2016
- SanDisk Technologies, Inc.
- Akira NAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCAVE WORD LINE AND CONVEX INTERLAYER DIELECTRIC FOR PROTECTING A...
- Publication number 20160126292
- Publication date May 5, 2016
- SanDisk 3D LLC
- Naohito Yanagida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCAVE WORD LINE AND CONVEX INTERLAYER DIELECTRIC FOR PROTECTING A...
- Publication number 20160126455
- Publication date May 5, 2016
- SanDisk 3D LLC
- Eiji Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Forming Oxide Below Control Gate In Vertical Channel Thi...
- Publication number 20150249143
- Publication date Sep 3, 2015
- SanDisk 3D LLC
- Michiaki Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Sidewall Gates
- Publication number 20150162338
- Publication date Jun 11, 2015
- SanDisk 3D LLC
- Akira Nakada
- H01 - BASIC ELECTRIC ELEMENTS

Akira Nakada

Person

Patents Grantslast 30 patents

Three-dimensional devices with wedge-shaped contact region and meth...

Resistive memory device containing etch stop structures for vertica...

Methods and apparatus for vertical bit line structures in three-dim...

Vertical thin film transistors with surround gates

Concave word line and convex interlayer dielectric for protecting a...

Concave word line and convex interlayer dielectric for protecting a...

Composite contact via structure containing an upper portion which f...

Method for forming oxide below control gate in vertical channel thi...

Non-volatile storage having oxide/nitride sidewall

Methods of forming sidewall gates

Patents Applicationslast 30 patents

RESISTIVE MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR VERTICA...

THREE-DIMENSIONAL DEVICES WITH WEDGE-SHAPED CONTACT REGION AND METH...

COMPOSITE CONTACT VIA STRUCTURE CONTAINING AN UPPER PORTION WHICH F...

CONCAVE WORD LINE AND CONVEX INTERLAYER DIELECTRIC FOR PROTECTING A...

CONCAVE WORD LINE AND CONVEX INTERLAYER DIELECTRIC FOR PROTECTING A...

Method For Forming Oxide Below Control Gate In Vertical Channel Thi...

Methods of Forming Sidewall Gates