Akira Noda

Person

Hitachi-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor wafer, radiation detection element, radiation detecto...
- Patent number 12,021,160
- Issue date Jun 25, 2024
- JX Metals Corporation
- Koji Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer, radiation detection element, radiation detecto...
- Patent number 11,967,659
- Issue date Apr 23, 2024
- JX Metals Corporation
- Koji Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, method f...
- Patent number 11,926,924
- Issue date Mar 12, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Radiation detection element, and method for manufacturing same
- Patent number 11,391,852
- Issue date Jul 19, 2022
- JX Nippon Mining & Metals Corporation
- Kohei Yamada
- G01 - MEASURING TESTING
Information Patent Grant
Compound semiconductor and method for producing single crystal of c...
- Patent number 11,371,164
- Issue date Jun 28, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,349,037
- Issue date May 31, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,211,505
- Issue date Dec 28, 2021
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CdTe-based compound single crystal and method for producing the same
- Patent number 10,557,215
- Issue date Feb 11, 2020
- JX Nippon Mining & Metals Corporation
- Kouji Murakami
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
UBM (under bump metal) electrode structure for radiation detector,...
- Patent number 10,199,343
- Issue date Feb 5, 2019
- JX Nippon Mining & Metals Corporation
- Makoto Mikami
- G01 - MEASURING TESTING
Information Patent Grant
Radiation detector UBM electrode structure body, radiation detector...
- Patent number 9,823,362
- Issue date Nov 21, 2017
- JX Nippon Mining & Metals Corporation
- Masaomi Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor single crystal ingot for photoelectric conve...
- Patent number 9,362,431
- Issue date Jun 7, 2016
- JX Nippon Mining & Metals Corporation
- Akira Noda
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
InP single crystal wafer and method for producing InP single crystal
- Patent number 8,815,010
- Issue date Aug 26, 2014
- Nippon Mining & Metals Co., Ltd.
- Akira Noda
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, METHOD F...
- Publication number 20230374700
- Publication date Nov 23, 2023
- JX NIPPON MINING & METALS CORPORATION
- Shunsuke OKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER, RADIATION DETECTION ELEMENT, RADIATION DETECTO...
- Publication number 20220199841
- Publication date Jun 23, 2022
- JX NIPPON MINING & METALS CORPORATION
- Koji MURAKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER, RADIATION DETECTION ELEMENT, RADIATION DETECTO...
- Publication number 20220158007
- Publication date May 19, 2022
- JX NIPPON MINING & METALS CORPORATION
- Koji MURAKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF C...
- Publication number 20210108335
- Publication date Apr 15, 2021
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
RADIATION DETECTION ELEMENT, AND METHOD FOR MANUFACTURING SAME
- Publication number 20210011180
- Publication date Jan 14, 2021
- JX NIPPON MINING & METALS CORPORATION
- Kohei YAMADA
- G01 - MEASURING TESTING
Information Patent Application
CdTe-BASED COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME
- Publication number 20180127892
- Publication date May 10, 2018
- JX NIPPON MINING & METALS CORPORATION
- Kouji MURAKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...
- Publication number 20180102446
- Publication date Apr 12, 2018
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
UBM (UNDER BUMP METAL) ELECTRODE STRUCTURE FOR RADIATION DETECTOR,...
- Publication number 20180061792
- Publication date Mar 1, 2018
- JX NIPPON MINING & METALS CORPORATION
- Makoto MIKAMI
- G01 - MEASURING TESTING
Information Patent Application
RADIATION DETECTOR UBM ELECTRODE STRUCTURE BODY, RADIATION DETECTOR...
- Publication number 20170108594
- Publication date Apr 20, 2017
- JX NIPPON MINING & METALS CORPORATION
- Masaomi Murakami
- G01 - MEASURING TESTING
Information Patent Application
COMPOUND SEMICONDUCTOR SINGLE CRYSTAL INGOT FOR PHOTOELECTRIC CONVE...
- Publication number 20160056313
- Publication date Feb 25, 2016
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...
- Publication number 20160043248
- Publication date Feb 11, 2016
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SYNTHESIZING GROUP II-VI COMPOUND SEMICONDUCTOR POLYCRYS...
- Publication number 20130029278
- Publication date Jan 31, 2013
- JX NIPPON MINING & METALS CORPORATION
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Inp Single Crystal Wafer and Method for Producing Inp Single Crystal
- Publication number 20080019896
- Publication date Jan 24, 2008
- Akira Noda
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Semiconductor wafer, radiation detection element, radiation detecto...

Semiconductor wafer, radiation detection element, radiation detecto...

Indium phosphide substrate, semiconductor epitaxial wafer, method f...

Radiation detection element, and method for manufacturing same

Compound semiconductor and method for producing single crystal of c...

Indium phosphide wafer, photoelectric conversion element, and metho...

Indium phosphide wafer, photoelectric conversion element, and metho...

CdTe-based compound single crystal and method for producing the same

UBM (under bump metal) electrode structure for radiation detector,...

Radiation detector UBM electrode structure body, radiation detector...

Compound semiconductor single crystal ingot for photoelectric conve...

InP single crystal wafer and method for producing InP single crystal

Patents Applicationslast 30 patents

INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, METHOD F...

SEMICONDUCTOR WAFER, RADIATION DETECTION ELEMENT, RADIATION DETECTO...

SEMICONDUCTOR WAFER, RADIATION DETECTION ELEMENT, RADIATION DETECTO...

COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF C...

RADIATION DETECTION ELEMENT, AND METHOD FOR MANUFACTURING SAME

CdTe-BASED COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME

INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...

UBM (UNDER BUMP METAL) ELECTRODE STRUCTURE FOR RADIATION DETECTOR,...

RADIATION DETECTOR UBM ELECTRODE STRUCTURE BODY, RADIATION DETECTOR...

COMPOUND SEMICONDUCTOR SINGLE CRYSTAL INGOT FOR PHOTOELECTRIC CONVE...

INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...

METHOD FOR SYNTHESIZING GROUP II-VI COMPOUND SEMICONDUCTOR POLYCRYS...

Inp Single Crystal Wafer and Method for Producing Inp Single Crystal