Akira Toriumi

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Current sensor and power conversion circuit
- Patent number 12,095,348
- Issue date Sep 17, 2024
- Japan Science and Technology Agency
- Takeaki Yajima
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Neuron circuit, system, and switch circuit
- Patent number 11,157,805
- Issue date Oct 26, 2021
- Japan Science and Technology Agency
- Takeaki Yajima
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including contact structure
- Patent number 10,748,776
- Issue date Aug 18, 2020
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having germanium layer as channel region and m...
- Patent number 10,109,710
- Issue date Oct 23, 2018
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure in which film including germanium oxide is...
- Patent number 9,722,026
- Issue date Aug 1, 2017
- Japan Science and Technology Agency
- Akira Toriumi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure having film including germanium oxide on ge...
- Patent number 9,691,620
- Issue date Jun 27, 2017
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-substrate manufacturing method and semiconductor-devi...
- Patent number 9,647,074
- Issue date May 9, 2017
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having aluminum oxynitride film on germaniu...
- Patent number 9,306,026
- Issue date Apr 5, 2016
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,063,452
- Issue date Nov 22, 2011
- The University of Tokyo
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal insulator semiconductor transistor using a gate insulator inc...
- Patent number 7,671,426
- Issue date Mar 2, 2010
- Renesas Technology Corp.
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,507,632
- Issue date Mar 24, 2009
- Renesas Technology Corp.
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,397,094
- Issue date Jul 8, 2008
- Renesas Technology Corporation
- Toshihide Nabatame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including field-effect transistor
- Patent number 7,102,203
- Issue date Sep 5, 2006
- Sanyo Electric Co., LTD
- Hideaki Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with negative differential resistance characte...
- Patent number 6,690,030
- Issue date Feb 10, 2004
- Kabushiki Kaisha Toshiba
- Junji Koga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with vertical columnar structure
- Patent number 6,642,575
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Mizuki Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum tunneling effect device and semiconductor composite substrate
- Patent number 6,320,220
- Issue date Nov 20, 2001
- Kabushiki Kaisha Toshiba
- Hiroshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and manufacturing method thereof
- Patent number 6,208,002
- Issue date Mar 27, 2001
- Kabushiki Kaisha Toshiba
- Hideki Satake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of improving an insulating film on a semicondu...
- Patent number 6,191,463
- Issue date Feb 20, 2001
- Kabushiki Kaisha Toshiba
- Yuichiro Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum tunneling effect device and semiconductor composite substrate
- Patent number 6,111,288
- Issue date Aug 29, 2000
- Kabushiki Kaisha Toshiba
- Hiroshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device using a silicon-on-insulato...
- Patent number 6,060,748
- Issue date May 9, 2000
- Kabushiki Kaisha Toshiba
- Ken Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,963,471
- Issue date Oct 5, 1999
- Kabushiki Kaisha Toshiba
- Akiko Ohata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor integrated circuit having plural functional blocks, w...
- Patent number 5,754,077
- Issue date May 19, 1998
- Kabushiki Kaisha Toshiba
- Akiko Ohata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Correlation tunnel device
- Patent number 5,679,961
- Issue date Oct 21, 1997
- Kabushiki Kaisha Toshiba
- Hitoshi Higurashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-speed semiconductor gain memory cell with minimal area occupancy
- Patent number 5,463,234
- Issue date Oct 31, 1995
- Kabushiki Kaisha Toshiba
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CURRENT SENSOR AND POWER CONVERSION CIRCUIT
- Publication number 20220393563
- Publication date Dec 8, 2022
- Japan Science and Technology Agency
- Takeaki Yajima
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
NEURON CIRCUIT, SYSTEM, AND SWITCH CIRCUIT
- Publication number 20190378002
- Publication date Dec 12, 2019
- Japan Science and Technology Agency
- Takeaki Yajima
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190228978
- Publication date Jul 25, 2019
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GERMANIUM LAYER AS CHANNEL REGION AND M...
- Publication number 20170317170
- Publication date Nov 2, 2017
- Japan Science and Technology Agency
- Akira TORIUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR-DEVI...
- Publication number 20160276445
- Publication date Sep 22, 2016
- Japan Science and Technology Agency
- Akira TORIUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE IN WHICH FILM INCLUDING GERMANIUM OXIDE IS...
- Publication number 20160218182
- Publication date Jul 28, 2016
- Japan Science and Technology Agency
- Akira TORIUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING FILM INCLUDING GERMANIUM OXIDE ON GE...
- Publication number 20150228492
- Publication date Aug 13, 2015
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING ALUMINUM OXYNITRIDE FILM ON GERMANIU...
- Publication number 20150171185
- Publication date Jun 18, 2015
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100176478
- Publication date Jul 15, 2010
- The University of Tokyo
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100019357
- Publication date Jan 28, 2010
- The University of Tokyo
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20090173998
- Publication date Jul 9, 2009
- RENESAS TECHNOLOGY CORP.
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20080083956
- Publication date Apr 10, 2008
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20060278937
- Publication date Dec 14, 2006
- Masaru Kadoshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20060071282
- Publication date Apr 6, 2006
- Masaru Kadoshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050236675
- Publication date Oct 27, 2005
- RENESAS TECHNOLOGY CORP.
- Toshihide Nabatame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including field-effect transistor
- Publication number 20040188725
- Publication date Sep 30, 2004
- SANYO ELECTRIC CO., LTD.
- Hideaki Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20010019137
- Publication date Sep 6, 2001
- Junji Koga
- H01 - BASIC ELECTRIC ELEMENTS

Akira Toriumi

Person

Patents Grantslast 30 patents

Current sensor and power conversion circuit

Neuron circuit, system, and switch circuit

Semiconductor device including contact structure

Semiconductor device having germanium layer as channel region and m...

Semiconductor structure in which film including germanium oxide is...

Semiconductor structure having film including germanium oxide on ge...

Semiconductor-substrate manufacturing method and semiconductor-devi...

Semiconductor structure having aluminum oxynitride film on germaniu...

Semiconductor device and method for manufacturing the same

Metal insulator semiconductor transistor using a gate insulator inc...

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device including field-effect transistor

Semiconductor device with negative differential resistance characte...

MOS transistor with vertical columnar structure

Quantum tunneling effect device and semiconductor composite substrate

Field effect transistor and manufacturing method thereof

Apparatus and method of improving an insulating film on a semicondu...

Quantum tunneling effect device and semiconductor composite substrate

Semiconductor integrated circuit device using a silicon-on-insulato...

Semiconductor device

Semiconductor integrated circuit having plural functional blocks, w...

Correlation tunnel device

High-speed semiconductor gain memory cell with minimal area occupancy

Patents Applicationslast 30 patents

CURRENT SENSOR AND POWER CONVERSION CIRCUIT

NEURON CIRCUIT, SYSTEM, AND SWITCH CIRCUIT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING GERMANIUM LAYER AS CHANNEL REGION AND M...

SEMICONDUCTOR-SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR-DEVI...

SEMICONDUCTOR STRUCTURE IN WHICH FILM INCLUDING GERMANIUM OXIDE IS...

SEMICONDUCTOR STRUCTURE HAVING FILM INCLUDING GERMANIUM OXIDE ON GE...

SEMICONDUCTOR STRUCTURE HAVING ALUMINUM OXYNITRIDE FILM ON GERMANIU...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device including field-effect transistor

Semiconductor device and method of manufacturing the same