Akira USUI

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing group-III nitride crystal, group-III nitride c...
- Patent number 10,266,965
- Issue date Apr 23, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Abrasive article
- Patent number 8,308,532
- Issue date Nov 13, 2012
- Kovax Corporation
- Akira Usui
- B24 - GRINDING POLISHING
Information Patent Grant
Porous substrate and its manufacturing method, and gan semiconducto...
- Patent number 7,829,913
- Issue date Nov 9, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxially grown nitride-based compound semiconductor crystal subs...
- Patent number 7,196,399
- Issue date Mar 27, 2007
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor substrate and its manufacturing method
- Patent number 7,189,588
- Issue date Mar 13, 2007
- NEC Corporation
- Akira Usui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride based semiconductor substrate and process for man...
- Patent number 7,097,920
- Issue date Aug 29, 2006
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate made of group III nitride, and process for...
- Patent number 6,924,159
- Issue date Aug 2, 2005
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an epitaxially grown nitride-based compound semic...
- Patent number 6,812,051
- Issue date Nov 2, 2004
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing compound semiconductor substrate
- Patent number 6,667,252
- Issue date Dec 23, 2003
- Sony Corporation
- Takao Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III-V compound semiconductors
- Patent number 6,555,845
- Issue date Apr 29, 2003
- NEC Corporation
- Haruo Sunakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ozonizer
- Patent number 6,395,239
- Issue date May 28, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoichiro Tabata
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing group III-V compound semiconductors
- Patent number 6,348,096
- Issue date Feb 19, 2002
- NEC Corporation
- Haruo Sunakawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN crystal film, a group III element nitride semiconductor wafer a...
- Patent number 6,252,261
- Issue date Jun 26, 2001
- NEC Corporation
- Akira Usui
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing abrasive sheet with thin resin film
- Patent number 6,183,677
- Issue date Feb 6, 2001
- Kovax Corporation
- Akira Usui
- B32 - LAYERED PRODUCTS
Information Patent Grant
Abrasive sheet with thin resin film
- Patent number 5,928,760
- Issue date Jul 27, 1999
- Kovax Corporation
- Akira Usui
- B32 - LAYERED PRODUCTS
Information Patent Grant
Method for growing p-type gallium nitride based compound semiconduc...
- Patent number 5,902,393
- Issue date May 11, 1999
- NEC Corporation
- Masaaki Nido
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth method of semiconductor crystal and molecular beam...
- Patent number 5,505,159
- Issue date Apr 9, 1996
- NEC Corporation
- Yuji Mochizuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxial growth of semiconductor crystal by using halog...
- Patent number 5,469,806
- Issue date Nov 28, 1995
- NEC Corporation
- Yuji Mochizuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting diode
- Patent number 4,680,602
- Issue date Jul 14, 1987
- NEC Corporation
- Hisatsune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...
- Publication number 20180163323
- Publication date Jun 14, 2018
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...
- Publication number 20170073839
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
ABRASIVE ARTICLE
- Publication number 20100112920
- Publication date May 6, 2010
- KOVAX CORPORATION
- Akira USUI
- B24 - GRINDING POLISHING
Information Patent Application
GROUP III NITRIDE BASED SEMICONDUCTOR SUBSTRATE AND PROCESS FOR MAN...
- Publication number 20060191467
- Publication date Aug 31, 2006
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride semiconductor substrate and its manufacturing method
- Publication number 20060046325
- Publication date Mar 2, 2006
- NEC Corporation
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Porous substrate and its manufacturing method, and gan semiconducto...
- Publication number 20060046511
- Publication date Mar 2, 2006
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxially grown nitride-based compound semiconductor crystal subs...
- Publication number 20050029507
- Publication date Feb 10, 2005
- NEC Corporation
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Base substrate for crystal growth and manufacturing method of subst...
- Publication number 20030207125
- Publication date Nov 6, 2003
- NEC Corporation
- Haruo Sunakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride based semiconductor substrate and process for man...
- Publication number 20030183157
- Publication date Oct 2, 2003
- NEC Corporation
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of forming an epitaxially grown nitride-based compound semic...
- Publication number 20030017685
- Publication date Jan 23, 2003
- NEC Corporation
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor substrate made of group III nitride, and process for...
- Publication number 20020197825
- Publication date Dec 26, 2002
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing compound semiconductor substrate
- Publication number 20020146912
- Publication date Oct 10, 2002
- Takao Miyajima
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group III-V compound semiconductors
- Publication number 20020066403
- Publication date Jun 6, 2002
- NEC Corporation
- Haruo Sunakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing a nitrogen-based semiconductor substrate an...
- Publication number 20010026950
- Publication date Oct 4, 2001
- NEC Corporation
- Haruo Sunakawa
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for producing group-III nitride crystal, group-III nitride c...

Abrasive article

Porous substrate and its manufacturing method, and gan semiconducto...

Epitaxially grown nitride-based compound semiconductor crystal subs...

Group III nitride semiconductor substrate and its manufacturing method

Group III nitride based semiconductor substrate and process for man...

Semiconductor substrate made of group III nitride, and process for...

Method of forming an epitaxially grown nitride-based compound semic...

Method of manufacturing compound semiconductor substrate

Method for manufacturing group III-V compound semiconductors

Ozonizer

Method for manufacturing group III-V compound semiconductors

GaN crystal film, a group III element nitride semiconductor wafer a...

Method of manufacturing abrasive sheet with thin resin film

Abrasive sheet with thin resin film

Method for growing p-type gallium nitride based compound semiconduc...

Epitaxial growth method of semiconductor crystal and molecular beam...

Method for epitaxial growth of semiconductor crystal by using halog...

Light emitting diode

Patents Applicationslast 30 patents

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...

ABRASIVE ARTICLE

GROUP III NITRIDE BASED SEMICONDUCTOR SUBSTRATE AND PROCESS FOR MAN...

Group III nitride semiconductor substrate and its manufacturing method

Porous substrate and its manufacturing method, and gan semiconducto...

Epitaxially grown nitride-based compound semiconductor crystal subs...

Base substrate for crystal growth and manufacturing method of subst...

Group III nitride based semiconductor substrate and process for man...

Method of forming an epitaxially grown nitride-based compound semic...

Semiconductor substrate made of group III nitride, and process for...

Method of manufacturing compound semiconductor substrate

Method for manufacturing group III-V compound semiconductors

Method of manufacturing a nitrogen-based semiconductor substrate an...