Akiyoshi Tamura

Person

Suita, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 8,716,756
- Issue date May 6, 2014
- Panasonic Corporation
- Kazushi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,436,399
- Issue date May 7, 2013
- Panasonic Corporation
- Kazushi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,017,975
- Issue date Sep 13, 2011
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a hetero-junction bipolar transistor an...
- Patent number 7,989,845
- Issue date Aug 2, 2011
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and manufacturing method thereof
- Patent number 7,728,357
- Issue date Jun 1, 2010
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 7,495,268
- Issue date Feb 24, 2009
- Panasonic Corporation
- Yoshiaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having an emitter layer made of a...
- Patent number 7,301,181
- Issue date Nov 27, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for compound semiconductor device
- Patent number 7,238,542
- Issue date Jul 3, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yoshiaki Kato
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Hetero-junction bipolar transistor and manufacturing method thereof
- Patent number 7,176,099
- Issue date Feb 13, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with Schottky electrode including lanthanum an...
- Patent number 7,144,765
- Issue date Dec 5, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,091,528
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a photosensitive resin covering at l...
- Patent number 7,012,337
- Issue date Mar 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,012,285
- Issue date Mar 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Tadayoshi Nakatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for fabricating the same
- Patent number 7,001,820
- Issue date Feb 21, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kenichi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,982,141
- Issue date Jan 3, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic high electron mobility transistor with Schottky elect...
- Patent number 6,967,360
- Issue date Nov 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction field effect transistor and manufacturing method the...
- Patent number 6,953,729
- Issue date Oct 11, 2005
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor and manufacturing method thereof
- Patent number 6,903,388
- Issue date Jun 7, 2005
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for producing the same
- Patent number 6,380,573
- Issue date Apr 30, 2002
- Matsushita Electronics Corporation
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and fabrication method
- Patent number 6,037,200
- Issue date Mar 14, 2000
- Matsushita Electric Industrial Co. Ltd.
- Tomoya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for producing the same
- Patent number 5,994,728
- Issue date Nov 30, 1999
- Matsushita Electronics Corporation
- Tomoya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,942,772
- Issue date Aug 24, 1999
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a tapered gate electrode
- Patent number 5,907,177
- Issue date May 25, 1999
- Matsushita Electric Industrial Co.,Ltd.
- Tomoya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an MIS structure
- Patent number 5,616,947
- Issue date Apr 1, 1997
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode for a p-type compound semiconductor and a bipolar t...
- Patent number 5,523,623
- Issue date Jun 4, 1996
- Matsushita Electric Industrial Co., Ltd.
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an MIS-type semiconductor device
- Patent number 5,336,361
- Issue date Aug 9, 1994
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for annealing compound semiconductor devices
- Patent number 5,162,242
- Issue date Nov 10, 1992
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of self-aligned asymmetric field effect tran...
- Patent number 4,992,387
- Issue date Feb 12, 1991
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing method for compound semiconductor substrate
- Patent number 4,752,592
- Issue date Jun 21, 1988
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130221371
- Publication date Aug 29, 2013
- PANASONIC CORPORATION
- Kazushi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A HETERO-JUNCTION BIPOLAR TRANSISTOR AN...
- Publication number 20110250726
- Publication date Oct 13, 2011
- PANASONIC CORPORATION
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD OF FABRICATING SAME
- Publication number 20100314696
- Publication date Dec 16, 2010
- PANASONIC CORPORATION
- Akihiko NISHIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100224908
- Publication date Sep 9, 2010
- PANASONIC CORPORATION
- Kazushi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100187571
- Publication date Jul 29, 2010
- PANASONIC CORPORATION
- Kenichi MIYAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20100171151
- Publication date Jul 8, 2010
- PANASONIC CORPORATION
- Kenichi MIYAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090230431
- Publication date Sep 17, 2009
- PANASONIC CORPORATION
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090230482
- Publication date Sep 17, 2009
- PANASONIC CORPORATION
- Yoshiaki KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080296624
- Publication date Dec 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080176391
- Publication date Jul 24, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hirotaka MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20080088020
- Publication date Apr 17, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kenichi MIYAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20070295991
- Publication date Dec 27, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yoshiaki KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20070145412
- Publication date Jun 28, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20060284212
- Publication date Dec 21, 2006
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20060281237
- Publication date Dec 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20060273396
- Publication date Dec 7, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060237753
- Publication date Oct 26, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor resistor and method for manufacturing the same
- Publication number 20060076585
- Publication date Apr 13, 2006
- Matsushita Electric Industrial, Co., Ltd.
- Yoshiaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20060030113
- Publication date Feb 9, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kenichi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and manufacturing method thereof
- Publication number 20050199909
- Publication date Sep 15, 2005
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20050199910
- Publication date Sep 15, 2005
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for compound semiconductor device
- Publication number 20050170654
- Publication date Aug 4, 2005
- Yoshiaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050145884
- Publication date Jul 7, 2005
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with Schottky electrode including lanthanum an...
- Publication number 20050121695
- Publication date Jun 9, 2005
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050042549
- Publication date Feb 24, 2005
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20040262634
- Publication date Dec 30, 2004
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040155261
- Publication date Aug 12, 2004
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction field effect transistor and manufacturing method the...
- Publication number 20040079965
- Publication date Apr 29, 2004
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040026742
- Publication date Feb 12, 2004
- Tadayoshi Nakatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040021153
- Publication date Feb 5, 2004
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS

Akiyoshi Tamura

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device having a hetero-junction bipolar transistor an...

Heterojunction bipolar transistor and manufacturing method thereof

Semiconductor device and manufacturing method of the same

Heterojunction bipolar transistor having an emitter layer made of a...

Manufacturing method for compound semiconductor device

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device with Schottky electrode including lanthanum an...

Semiconductor device

Semiconductor device including a photosensitive resin covering at l...

Semiconductor device

Heterojunction bipolar transistor and method for fabricating the same

Semiconductor device and manufacturing method thereof

Pseudomorphic high electron mobility transistor with Schottky elect...

Heterojunction field effect transistor and manufacturing method the...

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor memory device and method for producing the same

Compound semiconductor device and fabrication method

Field effect transistor and method for producing the same

Semiconductor device and method of manufacturing the same

Semiconductor device having a tapered gate electrode

Semiconductor device having an MIS structure

Ohmic electrode for a p-type compound semiconductor and a bipolar t...

Method of manufacturing an MIS-type semiconductor device

Method for annealing compound semiconductor devices

Method for fabrication of self-aligned asymmetric field effect tran...

Annealing method for compound semiconductor substrate

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A HETERO-JUNCTION BIPOLAR TRANSISTOR AN...

FIELD-EFFECT TRANSISTOR AND METHOD OF FABRICATING SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

Hetero-junction bipolar transistor and manufacturing method thereof

METHOD OF MANUFACTURING JUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor device and method for manufacturing the same

Semiconductor resistor and method for manufacturing the same

HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Heterojunction bipolar transistor and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method thereof

Manufacturing method for compound semiconductor device

Semiconductor device

Semiconductor device with Schottky electrode including lanthanum an...

Semiconductor device and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Heterojunction field effect transistor and manufacturing method the...

Semiconductor device

Semiconductor device and manufacturing method thereof