AKM AHSAN

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel structure integrated with non-planar structures
- Patent number 11,728,335
- Issue date Aug 15, 2023
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET based capacitors and resistors and related apparatuses, syst...
- Patent number 11,393,934
- Issue date Jul 19, 2022
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual mode snap back circuit device
- Patent number 11,152,352
- Issue date Oct 19, 2021
- Intel Corporation
- Akm Ahsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with dual thickness gate dielectrics
- Patent number 11,145,732
- Issue date Oct 12, 2021
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended drain non-planar MOSFETs for electrostatic discharge (ESD)...
- Patent number 10,103,542
- Issue date Oct 16, 2018
- Intel Corporation
- Akm Ahsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended drain non-planar MOSFETs for electrostatic discharge (ESD)...
- Patent number 9,502,883
- Issue date Nov 22, 2016
- Intel Corporation
- Akm Ahsan
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Extended drain non-planar MOSFETs for electrostatic discharge (ESD)...
- Patent number 9,087,719
- Issue date Jul 21, 2015
- Intel Corporation
- Akm Ahsan
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
BURIED CHANNEL STRUCTURE INTEGRATED WITH NON-PLANAR STRUCTURES
- Publication number 20230317720
- Publication date Oct 5, 2023
- Intel Corporation
- Guannan LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DUAL THICKNESS GATE DIELECTRICS
- Publication number 20210167180
- Publication date Jun 3, 2021
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL MODE SNAP BACK CIRCUIT DEVICE
- Publication number 20200312838
- Publication date Oct 1, 2020
- Intel Corporation
- Akm Ahsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CHANNEL STRUCTURE INTEGRATED WITH NON-PLANAR STRUCTURES
- Publication number 20200243517
- Publication date Jul 30, 2020
- Intel Corporation
- Guannan LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET BASED CAPACITORS AND RESISTORS AND RELATED APPARATUSES, SYST...
- Publication number 20200235249
- Publication date Jul 23, 2020
- Intel Corporation
- Ayan KAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED DRAIN NON-PLANAR MOSFETS FOR ELECTROSTATIC DISCHARGE (ESD)...
- Publication number 20170040793
- Publication date Feb 9, 2017
- Intel Corporation
- AKM AHSAN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
EXTENDED DRAIN NON-PLANAR MOSFETS FOR ELECTROSTATIC DISCHARGE (ESD)...
- Publication number 20150326007
- Publication date Nov 12, 2015
- Intel Corporation
- AKM AHSAN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Extended Drain Non-planar MOSFETs for Electrostatic Discharge (ESD)...
- Publication number 20140092506
- Publication date Apr 3, 2014
- AKM AHSAN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Person

Patents Grantslast 30 patents

Planar buried channel structure integrated with non-planar structures

Buried channel structure integrated with non-planar structures

FinFET based capacitors and resistors and related apparatuses, syst...

Dual mode snap back circuit device

Field-effect transistors with dual thickness gate dielectrics

Extended drain non-planar MOSFETs for electrostatic discharge (ESD)...

Extended drain non-planar MOSFETs for electrostatic discharge (ESD)...

Extended drain non-planar MOSFETs for electrostatic discharge (ESD)...

Patents Applicationslast 30 patents

BURIED CHANNEL STRUCTURE INTEGRATED WITH NON-PLANAR STRUCTURES

FIELD-EFFECT TRANSISTORS WITH DUAL THICKNESS GATE DIELECTRICS

DUAL MODE SNAP BACK CIRCUIT DEVICE

BURIED CHANNEL STRUCTURE INTEGRATED WITH NON-PLANAR STRUCTURES

FINFET BASED CAPACITORS AND RESISTORS AND RELATED APPARATUSES, SYST...

EXTENDED DRAIN NON-PLANAR MOSFETS FOR ELECTROSTATIC DISCHARGE (ESD)...

EXTENDED DRAIN NON-PLANAR MOSFETS FOR ELECTROSTATIC DISCHARGE (ESD)...

Extended Drain Non-planar MOSFETs for Electrostatic Discharge (ESD)...