Alan Renninger

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for incorporating high voltage devices in an EEPROM
- Patent number 8,093,640
- Issue date Jan 10, 2012
- Atmel Corporation
- Stefan Schwantes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for incorporating high voltage devices in an EEPROM
- Patent number 7,560,334
- Issue date Jul 14, 2009
- Atmel Corporation
- Stefan Schwantes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned non-volatile memory cell
- Patent number RE40486
- Issue date Sep 9, 2008
- Atmel Corporation
- Bohumil Lojek
- 257 - Active solid-state devices
Information Patent Grant
Method of forming a low voltage gate oxide layer and tunnel oxide l...
- Patent number 7,037,786
- Issue date May 2, 2006
- Atmel Corporation
- Alan L. Renninger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned non-volatile memory cell
- Patent number 6,841,823
- Issue date Jan 11, 2005
- Atmel Corporation
- Bohumil Lojek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra small thin windows in floating gate transistors defined by lo...
- Patent number 6,624,027
- Issue date Sep 23, 2003
- Atmel Corporation
- Eleonore Daemen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a self-aligned non-volatile memory cell
- Patent number 6,624,029
- Issue date Sep 23, 2003
- Atmel Corporation
- Bohumil Lojek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a self-aligned non-volatile memory cell
- Patent number 6,479,351
- Issue date Nov 12, 2002
- Atmel Corporation
- Bohumil Lojek
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR INCORPORATING HIGH VOLTAGE DEVICES IN AN EEPROM
- Publication number 20090273883
- Publication date Nov 5, 2009
- Stefan Schwantes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for incorporating high voltage devices in an EEPROM
- Publication number 20070090432
- Publication date Apr 26, 2007
- Stefan Schwantes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a low voltage gate oxide layer and tunnel oxide l...
- Publication number 20050189580
- Publication date Sep 1, 2005
- Atmel Corporation
- Alan L. Renninger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED EEPROM CELL AND METHOD OF FORMING THE SAME
- Publication number 20050106817
- Publication date May 19, 2005
- Alan L. Renninger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a self-aligned non-volatile memory cell
- Publication number 20030013255
- Publication date Jan 16, 2003
- Bohumil Lojek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned non-volatile memory cell
- Publication number 20020063278
- Publication date May 30, 2002
- Bohumil Lojek
- H01 - BASIC ELECTRIC ELEMENTS

Alan Renninger

Person

Patents Grantslast 30 patents

Method and system for incorporating high voltage devices in an EEPROM

Method and system for incorporating high voltage devices in an EEPROM

Self-aligned non-volatile memory cell

Method of forming a low voltage gate oxide layer and tunnel oxide l...

Self-aligned non-volatile memory cell

Ultra small thin windows in floating gate transistors defined by lo...

Method of fabricating a self-aligned non-volatile memory cell

Method of fabricating a self-aligned non-volatile memory cell

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR INCORPORATING HIGH VOLTAGE DEVICES IN AN EEPROM

Method and system for incorporating high voltage devices in an EEPROM

Method of forming a low voltage gate oxide layer and tunnel oxide l...

EMBEDDED EEPROM CELL AND METHOD OF FORMING THE SAME

Method of fabricating a self-aligned non-volatile memory cell

Self-aligned non-volatile memory cell