Alban Zaka

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage devices integrated on semiconductor-on-insulator subst...
- Patent number 11,984,503
- Issue date May 14, 2024
- GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG
- Ruchil Kumar Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,929,433
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including transistor using buried insulator layer as gate...
- Patent number 11,837,605
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating-gate devices in high voltage applications
- Patent number 11,610,999
- Issue date Mar 21, 2023
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage devices integrated on semiconductor-on-insulator subst...
- Patent number 11,552,192
- Issue date Jan 10, 2023
- GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG
- Ruchil Kumar Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trapping sidewall spacer-type non-volatile memory device and...
- Patent number 11,315,949
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,245,032
- Issue date Feb 8, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double diffused metal oxide semiconductor (LDMOS) device...
- Patent number 10,930,777
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-channel low noise transistors and methods of making such dev...
- Patent number 10,644,152
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor element with reduced lateral electrical field
- Patent number 10,580,863
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Damien Angot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon on insulator (FDSOI) lateral double-diffused...
- Patent number 10,497,803
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin body field effect transistor including a counter-doped channel...
- Patent number 10,283,642
- Issue date May 7, 2019
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive structure in a semiconductor device having reduced capac...
- Patent number 10,283,584
- Issue date May 7, 2019
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 10,170,614
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Christian Schippel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor structure with high resistance based on very thin semicond...
- Patent number 10,121,846
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,038,091
- Issue date Jul 31, 2018
- GLOBALFOUNDRIES Inc.
- Christian Schippel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS capacitive structure of reduced capacitance variability
- Patent number 9,905,707
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Andrei Sidelnicov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with improved implantat...
- Patent number 9,881,841
- Issue date Jan 30, 2018
- GLOBALFOUNDRIES, INC.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with STI structures on an...
- Patent number 9,741,625
- Issue date Aug 22, 2017
- GLOBALFOUNDRIES Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a nonvolatile memory cell and met...
- Patent number 9,711,513
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complex semiconductor devices of the SOI type
- Patent number 9,466,717
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with shallow trench isolations, and methods for...
- Patent number 9,460,955
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES, INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low thermal budget schemes in semiconductor device fabrication
- Patent number 9,396,950
- Issue date Jul 19, 2016
- GLOBALFOUNDRIES Inc.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device and resulting semiconducto...
- Patent number 9,324,869
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with improved implantat...
- Patent number 9,312,189
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES, INC.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device structure employing fluori...
- Patent number 9,263,270
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for a uniform compressive strain layer and device thereof
- Patent number 9,190,516
- Issue date Nov 17, 2015
- GLOBALFOUNDRIES Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance enhancement in transistors by providing a graded embedd...
- Patent number 8,853,752
- Issue date Oct 7, 2014
- GLOBALFOUNDRIES Inc.
- El Mehdi Bazizi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...
- Publication number 20240055434
- Publication date Feb 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBST...
- Publication number 20230115000
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- RUCHIL KUMAR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-TRAPPING SIDEWALL SPACER-TYPE NON-VOLATILE MEMORY DEVICE AND...
- Publication number 20220085054
- Publication date Mar 17, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET FOR FDSOI DEVICES
- Publication number 20220069125
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- IGNASI CORTES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING-GATE DEVICES IN HIGH VOLTAGE APPLICATIONS
- Publication number 20210391457
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Alban ZAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBST...
- Publication number 20210359130
- Publication date Nov 18, 2021
- GLOBALFOUNDRIES INC.
- RUCHIL KUMAR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET FOR FDSOI DEVICES
- Publication number 20200321466
- Publication date Oct 8, 2020
- GLOBALFOUNDRIES INC.
- IGNASI CORTES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE...
- Publication number 20190157451
- Publication date May 23, 2019
- GLOBALFOUNDRIES INC.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ELEMENT WITH REDUCED LATERAL ELECTRICAL FIELD
- Publication number 20190109192
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Damien Angot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY DEPLETED SILICON ON INSULATOR (FDSOI) LATERAL DOUBLE-DIFFUSED...
- Publication number 20190051747
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Ignasi CORTES MAYOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20180254343
- Publication date Sep 6, 2018
- GLOBALFOUNDRIES INC.
- Christian Schippel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITIVE STRUCTURE IN A SEMICONDUCTOR DEVICE HAVING REDUCED CAPAC...
- Publication number 20180090558
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20170317209
- Publication date Nov 2, 2017
- GLOBALFOUNDRIES INC.
- Christian Schippel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20170069550
- Publication date Mar 9, 2017
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A NONVOLATILE MEMORY CELL AND MET...
- Publication number 20170047336
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEX SEMICONDUCTOR DEVICES OF THE SOI TYPE
- Publication number 20160300947
- Publication date Oct 13, 2016
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTAT...
- Publication number 20160204038
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES, Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTAT...
- Publication number 20150287646
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES, Inc.
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR A UNIFORM COMPRESSIVE STRAIN LAYER AND DEVICE THEREOF
- Publication number 20150243787
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Ran YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MULTIPLE-GATE INTEGRATED CIRCUITS
- Publication number 20150187909
- Publication date Jul 2, 2015
- GLOBAL FOUNDRIES, INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR...
- Publication number 20150145000
- Publication date May 28, 2015
- GLOBALFOUNDRIES, INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE EMPLOYING FLUORI...
- Publication number 20140361385
- Publication date Dec 11, 2014
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE...
- Publication number 20140264626
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW THERMAL BUDGET SCHEMES IN SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20140264349
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS BY PROVIDING A GRADED EMBEDD...
- Publication number 20140117417
- Publication date May 1, 2014
- GLOBALFOUNDRIES INC.
- El Mehdi Bazizi
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High-voltage devices integrated on semiconductor-on-insulator subst...

Asymmetric FET for FDSOI devices

Structure including transistor using buried insulator layer as gate...

Floating-gate devices in high voltage applications

High-voltage devices integrated on semiconductor-on-insulator subst...

Charge-trapping sidewall spacer-type non-volatile memory device and...

Asymmetric FET for FDSOI devices

Laterally double diffused metal oxide semiconductor (LDMOS) device...

Buried-channel low noise transistors and methods of making such dev...

Transistor element with reduced lateral electrical field

Fully depleted silicon on insulator (FDSOI) lateral double-diffused...

Thin body field effect transistor including a counter-doped channel...

Capacitive structure in a semiconductor device having reduced capac...

Method of forming a semiconductor device

Resistor structure with high resistance based on very thin semicond...

Semiconductor device and method

MOS capacitive structure of reduced capacitance variability

Methods for fabricating integrated circuits with improved implantat...

Method of forming a semiconductor device with STI structures on an...

Semiconductor structure including a nonvolatile memory cell and met...

Complex semiconductor devices of the SOI type

Integrated circuits with shallow trench isolations, and methods for...

Low thermal budget schemes in semiconductor device fabrication

Method of forming a semiconductor device and resulting semiconducto...

Methods for fabricating integrated circuits with improved implantat...

Method of forming a semiconductor device structure employing fluori...

Method for a uniform compressive strain layer and device thereof

Performance enhancement in transistors by providing a graded embedd...

Patents Applicationslast 30 patents

STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...

HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBST...

CHARGE-TRAPPING SIDEWALL SPACER-TYPE NON-VOLATILE MEMORY DEVICE AND...

ASYMMETRIC FET FOR FDSOI DEVICES

FLOATING-GATE DEVICES IN HIGH VOLTAGE APPLICATIONS

HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBST...

ASYMMETRIC FET FOR FDSOI DEVICES

LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE...

TRANSISTOR ELEMENT WITH REDUCED LATERAL ELECTRICAL FIELD

FULLY DEPLETED SILICON ON INSULATOR (FDSOI) LATERAL DOUBLE-DIFFUSED...

METHOD OF FORMING A SEMICONDUCTOR DEVICE

CAPACITIVE STRUCTURE IN A SEMICONDUCTOR DEVICE HAVING REDUCED CAPAC...

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF FORMING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE INCLUDING A NONVOLATILE MEMORY CELL AND MET...

COMPLEX SEMICONDUCTOR DEVICES OF THE SOI TYPE

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTAT...

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTAT...

METHOD FOR A UNIFORM COMPRESSIVE STRAIN LAYER AND DEVICE THEREOF

METHODS FOR FABRICATING MULTIPLE-GATE INTEGRATED CIRCUITS

INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR...

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE EMPLOYING FLUORI...

METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE...

LOW THERMAL BUDGET SCHEMES IN SEMICONDUCTOR DEVICE FABRICATION

PERFORMANCE ENHANCEMENT IN TRANSISTORS BY PROVIDING A GRADED EMBEDD...