Albert Augustus Burk JR.

Person

Chapel Hill, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 10,577,720
- Issue date Mar 3, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,541,306
- Issue date Jan 21, 2020
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,403,722
- Issue date Sep 3, 2019
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,349,797
- Issue date May 24, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick nitride semiconductor structures with interlayer structures a...
- Patent number 9,054,017
- Issue date Jun 9, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable power devices on low-angle off-cut silicon carbide crystals
- Patent number 8,536,582
- Issue date Sep 17, 2013
- Cree, Inc.
- Qingchun Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thick nitride semiconductor structures with interlayer structures
- Patent number 8,362,503
- Issue date Jan 29, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STABILIZED, HIGH-DOPED SILICON CARBIDE
- Publication number 20200157705
- Publication date May 21, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
STABILIZED, HIGH-DOPED SILICON CARBIDE
- Publication number 20180187332
- Publication date Jul 5, 2018
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...
- Publication number 20140070230
- Publication date Mar 13, 2014
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE HIGH-QUALITY EPITAXIAL WAFERS
- Publication number 20140054609
- Publication date Feb 27, 2014
- Cree, Inc.
- Albert Augustus Burk
- C30 - CRYSTAL GROWTH
Information Patent Application
THICK NITRIDE SEMICONDUCTOR STRUCTURES WITH INTERLAYER STRUCTURES A...
- Publication number 20130221327
- Publication date Aug 29, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
- Publication number 20130026493
- Publication date Jan 31, 2013
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS
- Publication number 20100133550
- Publication date Jun 3, 2010
- Qingchun Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor structures with interlayer structures and met...
- Publication number 20080220555
- Publication date Sep 11, 2008
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thick nitride semiconductor structures with interlayer structures a...
- Publication number 20080217645
- Publication date Sep 11, 2008
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimizing Degradation of SiC Bipolar Semiconductor Devices
- Publication number 20070117336
- Publication date May 24, 2007
- Cree, Inc.
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20050116234
- Publication date Jun 2, 2005
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20050118746
- Publication date Jun 2, 2005
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20030080842
- Publication date May 1, 2003
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH

Albert Augustus Burk JR.

Person

Patents Grantslast 30 patents

Stabilized, high-doped silicon carbide

Using a carbon vacancy reduction material to increase average carri...

Using a carbon vacancy reduction material to increase average carri...

SiC devices with high blocking voltage terminated by a negative bevel

Thick nitride semiconductor structures with interlayer structures a...

Stable power devices on low-angle off-cut silicon carbide crystals

Thick nitride semiconductor structures with interlayer structures

Patents Applicationslast 30 patents

STABILIZED, HIGH-DOPED SILICON CARBIDE

STABILIZED, HIGH-DOPED SILICON CARBIDE

USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...

LARGE HIGH-QUALITY EPITAXIAL WAFERS

THICK NITRIDE SEMICONDUCTOR STRUCTURES WITH INTERLAYER STRUCTURES A...

SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL

STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS

Nitride semiconductor structures with interlayer structures and met...

Thick nitride semiconductor structures with interlayer structures a...

Minimizing Degradation of SiC Bipolar Semiconductor Devices

Minimizing degradation of SiC bipolar semiconductor devices

Minimizing degradation of SiC bipolar semiconductor devices

Minimizing degradation of SiC bipolar semiconductor devices