Albert Chen

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,502,254
- Issue date Nov 15, 2022
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retention improvement by high-k encapsulation of RRAM devices
- Patent number 11,462,684
- Issue date Oct 4, 2022
- Intel Corporation
- Albert Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRIC SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TF...
- Publication number 20230369503
- Publication date Nov 16, 2023
- Intel Corporation
- Cheng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR...
- Publication number 20230369426
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER MEMORY STRUCTURE WITH GRADED CHARACTERISTICS
- Publication number 20230371233
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED OR GRADED GATE DIELECTRIC IN THIN FILM TRANSISTOR (TF...
- Publication number 20230369444
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ETCH STOP LAYERS
- Publication number 20230317615
- Publication date Oct 5, 2023
- Intel Corporation
- Deepyanti Taneja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKEND MEMORY WITH AIR GAPS IN UPPER METAL LAYERS
- Publication number 20220406782
- Publication date Dec 22, 2022
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20200343445
- Publication date Oct 29, 2020
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RETENTION IMPROVEMENT BY HIGH-K ENCAPSULATION OF RRAM DEVICES
- Publication number 20200203605
- Publication date Jun 25, 2020
- Albert CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHODS OF FABRICATION
- Publication number 20200106013
- Publication date Apr 2, 2020
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS

Albert Chen

Person

Patents Grantslast 30 patents

Resistive random-access memory devices and methods of fabrication

Resistive random access memory device and methods of fabrication

Retention improvement by high-k encapsulation of RRAM devices

Patents Applicationslast 30 patents

ASYMMETRIC SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TF...

MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR...

MULTI-TIER MEMORY STRUCTURE WITH GRADED CHARACTERISTICS

MULTI-LAYERED OR GRADED GATE DIELECTRIC IN THIN FILM TRANSISTOR (TF...

HYBRID ETCH STOP LAYERS

BACKEND MEMORY WITH AIR GAPS IN UPPER METAL LAYERS

RESISTIVE RANDOM-ACCESS MEMORY DEVICES AND METHODS OF FABRICATION

RETENTION IMPROVEMENT BY HIGH-K ENCAPSULATION OF RRAM DEVICES

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHODS OF FABRICATION