Albert Yao

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Hsin-chu City, TW

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Patents Grantslast 30 patents

Information Patent Grant
LDPMOS structure with enhanced breakdown voltage
- Patent number 7,423,319
- Issue date Sep 9, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDPMOS structure with enhanced breakdown voltage
- Publication number 20080157197
- Publication date Jul 3, 2008
- Robin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS