Alessandro Calderoni

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Differential storage in memory arrays
- Patent number 12,300,298
- Issue date May 13, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and shield s...
- Patent number 12,080,331
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming structures containing leaker-devices and memory...
- Patent number 11,711,924
- Issue date Jul 25, 2023
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and shield s...
- Patent number 11,688,450
- Issue date Jun 27, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell imprint avoidance
- Patent number 11,501,817
- Issue date Nov 15, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Array of cross point memory cells
- Patent number 11,393,978
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 11,315,939
- Issue date Apr 26, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 11,024,378
- Issue date Jun 1, 2021
- Micron Technology , Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell imprint avoidance
- Patent number 10,978,128
- Issue date Apr 13, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 10,903,218
- Issue date Jan 26, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 10,833,092
- Issue date Nov 10, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of cross point memory cells
- Patent number 10,741,755
- Issue date Aug 11, 2020
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory and methods of forming the same
- Patent number 10,707,220
- Issue date Jul 7, 2020
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell performance recovery using cycling techniques
- Patent number 10,706,906
- Issue date Jul 7, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory sensing
- Patent number 10,699,784
- Issue date Jun 30, 2020
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell imprint avoidance
- Patent number 10,475,500
- Issue date Nov 12, 2019
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Writing to cross-point non-volatile memory
- Patent number 10,431,285
- Issue date Oct 1, 2019
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing to cross-point non-volatile memory
- Patent number 10,153,026
- Issue date Dec 11, 2018
- Micron Technology, Inc.
- Bei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,147,486
- Issue date Dec 4, 2018
- Micron Technology, Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Cell performance recovery using cycling techniques
- Patent number 10,141,040
- Issue date Nov 27, 2018
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Array of cross point memory cells
- Patent number 10,134,982
- Issue date Nov 20, 2018
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell imprint avoidance
- Patent number 10,083,732
- Issue date Sep 25, 2018
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory sensing
- Patent number 10,062,432
- Issue date Aug 28, 2018
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing to cross-point non-volatile memory
- Patent number 9,928,894
- Issue date Mar 27, 2018
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Drift acceleration in resistance variable memory
- Patent number 9,858,999
- Issue date Jan 2, 2018
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Cell performance recovery using cycling techniques
- Patent number 9,786,349
- Issue date Oct 10, 2017
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory and methods of forming the same
- Patent number 9,768,181
- Issue date Sep 19, 2017
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell imprint avoidance
- Patent number 9,721,639
- Issue date Aug 1, 2017
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing to cross-point non-volatile memory
- Patent number 9,613,676
- Issue date Apr 4, 2017
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 9,269,432
- Issue date Feb 23, 2016
- Micron Technology, Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE INCLUDING 2-TRANSISTOR MEMORY CELL STRUCTURE FOR NEUR...
- Publication number 20250029638
- Publication date Jan 23, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20240420750
- Publication date Dec 19, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH A TRANSISTOR ABOVE VERTICALLY STACKED MEMORY CELLS
- Publication number 20240389309
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Kamal M. KARDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES WITH VOIDS
- Publication number 20240164113
- Publication date May 16, 2024
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL STORAGE IN MEMORY ARRAYS
- Publication number 20240127877
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20230298652
- Publication date Sep 21, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20220278112
- Publication date Sep 1, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Structures Containing Leaker-Devices and Memory...
- Publication number 20220199634
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL IMPRINT AVOIDANCE
- Publication number 20210280231
- Publication date Sep 9, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Methods of Incorporating Leaker-Devices into Capacitor Configuratio...
- Publication number 20210134816
- Publication date May 6, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
Array of Cross Point Memory Cells
- Publication number 20200365800
- Publication date Nov 19, 2020
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Incorporating Leaker-Devices into Capacitor Configuratio...
- Publication number 20200328221
- Publication date Oct 15, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF INCORPORATING LEAKER-DEVICES INTO CAPACITOR CONFIGURATIO...
- Publication number 20200235111
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL IMPRINT AVOIDANCE
- Publication number 20200090728
- Publication date Mar 19, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WRITING TO CROSS-POINT NON-VOLATILE MEMORY
- Publication number 20190139591
- Publication date May 9, 2019
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190074060
- Publication date Mar 7, 2019
- Micron Technology, Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL IMPRINT AVOIDANCE
- Publication number 20180366176
- Publication date Dec 20, 2018
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CELL PERFORMANCE RECOVERY USING CYCLING TECHNIQUES
- Publication number 20180358076
- Publication date Dec 13, 2018
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY SENSING
- Publication number 20180342294
- Publication date Nov 29, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
Array Of Cross Point Memory Cells
- Publication number 20180331283
- Publication date Nov 15, 2018
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRITING TO CROSS-POINT NON-VOLATILE MEMORY
- Publication number 20180137908
- Publication date May 17, 2018
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING TO CROSS-POINT NON-VOLATILE MEMORY
- Publication number 20180005682
- Publication date Jan 4, 2018
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
CELL PERFORMANCE RECOVERY USING CYCLING TECHNIQUES
- Publication number 20180005681
- Publication date Jan 4, 2018
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME
- Publication number 20180006044
- Publication date Jan 4, 2018
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL IMPRINT AVOIDANCE
- Publication number 20170365323
- Publication date Dec 21, 2017
- Micron Technology, Inc.
- Alessandro Calderoni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Array Of Cross Point Memory Cells
- Publication number 20170025474
- Publication date Jan 26, 2017
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20160172031
- Publication date Jun 16, 2016
- Micron Technology, Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT ACCELERATION IN RESISTANCE VARIABLE MEMORY
- Publication number 20160104530
- Publication date Apr 14, 2016
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME
- Publication number 20150311217
- Publication date Oct 29, 2015
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT ACCELERATION IN RESISTANCE VARIABLE MEMORY
- Publication number 20150294718
- Publication date Oct 15, 2015
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE

Alessandro Calderoni

Person

Patents Grantslast 30 patents

Differential storage in memory arrays

Memory device having 2-transistor vertical memory cell and shield s...

Methods of forming structures containing leaker-devices and memory...

Memory device having 2-transistor vertical memory cell and shield s...

Memory cell imprint avoidance

Array of cross point memory cells

Methods of incorporating leaker-devices into capacitor configuratio...

Memory systems and memory programming methods

Memory cell imprint avoidance

Methods of incorporating leaker-devices into capacitor configuratio...

Methods of incorporating leaker-devices into capacitor configuratio...

Array of cross point memory cells

Ferroelectric memory and methods of forming the same

Cell performance recovery using cycling techniques

Resistive memory sensing

Memory cell imprint avoidance

Writing to cross-point non-volatile memory

Writing to cross-point non-volatile memory

Memory systems and memory programming methods

Cell performance recovery using cycling techniques

Array of cross point memory cells

Memory cell imprint avoidance

Resistive memory sensing

Writing to cross-point non-volatile memory

Drift acceleration in resistance variable memory

Cell performance recovery using cycling techniques

Ferroelectric memory and methods of forming the same

Memory cell imprint avoidance

Writing to cross-point non-volatile memory

Memory systems and memory programming methods

Patents Applicationslast 30 patents

MEMORY DEVICE INCLUDING 2-TRANSISTOR MEMORY CELL STRUCTURE FOR NEUR...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE WITH A TRANSISTOR ABOVE VERTICALLY STACKED MEMORY CELLS

MEMORY STRUCTURES WITH VOIDS

DIFFERENTIAL STORAGE IN MEMORY ARRAYS

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

Methods of Forming Structures Containing Leaker-Devices and Memory...

MEMORY CELL IMPRINT AVOIDANCE

Methods of Incorporating Leaker-Devices into Capacitor Configuratio...

Array of Cross Point Memory Cells

Methods of Incorporating Leaker-Devices into Capacitor Configuratio...

METHODS OF INCORPORATING LEAKER-DEVICES INTO CAPACITOR CONFIGURATIO...

MEMORY CELL IMPRINT AVOIDANCE

WRITING TO CROSS-POINT NON-VOLATILE MEMORY

Memory Systems and Memory Programming Methods

MEMORY CELL IMPRINT AVOIDANCE

CELL PERFORMANCE RECOVERY USING CYCLING TECHNIQUES

RESISTIVE MEMORY SENSING

Array Of Cross Point Memory Cells

WRITING TO CROSS-POINT NON-VOLATILE MEMORY

WRITING TO CROSS-POINT NON-VOLATILE MEMORY

CELL PERFORMANCE RECOVERY USING CYCLING TECHNIQUES

FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME

MEMORY CELL IMPRINT AVOIDANCE

Array Of Cross Point Memory Cells

Memory Systems and Memory Programming Methods

DRIFT ACCELERATION IN RESISTANCE VARIABLE MEMORY

FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME

DRIFT ACCELERATION IN RESISTANCE VARIABLE MEMORY