Alexander BADMAEV

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Portland, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures with high phosphorous dopant concentration
- Patent number 11,955,482
- Issue date Apr 9, 2024
- Intel Corporation
- Robert Ehlert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...
- Publication number 20250006806
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH PHOSPHOROUS DOPANT CONCENTRATION
- Publication number 20210358908
- Publication date Nov 18, 2021
- Intel Corporation
- Robert EHLERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN BASED HEMT DEVICE RELAXED BUFFER STRUCTURE ON SILICON
- Publication number 20200194577
- Publication date Jun 18, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS