Alexander Philippou

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device including first and second trench struct...
- Patent number 11,742,417
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Thorsten Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 11,682,700
- Issue date Jun 20, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a power semiconductor device
- Patent number 11,594,621
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode with structured barrier region
- Patent number 11,538,906
- Issue date Dec 27, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT with an IGBT section and a diode section
- Patent number 11,398,472
- Issue date Jul 26, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, semiconductor device and IGBT module
- Patent number 11,257,914
- Issue date Feb 22, 2022
- Infineon Technologies AG
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with dV/dt controllability and tapered mesas
- Patent number 11,114,528
- Issue date Sep 7, 2021
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 10,978,560
- Issue date Apr 13, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having a barrier region
- Patent number 10,930,772
- Issue date Feb 23, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having trench electrodes biased at three...
- Patent number 10,910,487
- Issue date Feb 2, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,854,739
- Issue date Dec 1, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having an SOI island
- Patent number 10,658,457
- Issue date May 19, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,615,272
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor device
- Patent number 10,608,104
- Issue date Mar 31, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,439,055
- Issue date Oct 8, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for testing a semiconductor device and...
- Patent number 10,424,645
- Issue date Sep 24, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability through selec...
- Patent number 10,347,754
- Issue date Jul 9, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI island in a power semiconductor device
- Patent number 10,256,299
- Issue date Apr 9, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising transistor cell units with differen...
- Patent number 10,109,624
- Issue date Oct 23, 2018
- Infineon Technologies AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sensor potential in the active region
- Patent number 10,096,531
- Issue date Oct 9, 2018
- Infineon Technologies AG
- Christian Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with variable resistive element
- Patent number 9,691,887
- Issue date Jun 27, 2017
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an insulated gate bipolar transistor with m...
- Patent number 9,653,568
- Issue date May 16, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
- Publication number 20240304709
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20240030323
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20230307499
- Publication date Sep 28, 2023
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Barrier Region
- Publication number 20230207673
- Publication date Jun 29, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Including First and Second Trench Struct...
- Publication number 20220052190
- Publication date Feb 17, 2022
- Thorsten Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20210210604
- Publication date Jul 8, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die, Semiconductor Device and IGBT Module
- Publication number 20210119003
- Publication date Apr 22, 2021
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT with an IGBT Section and a Diode Section
- Publication number 20210083081
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode with Structured Barrier Region
- Publication number 20210083051
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Power Semiconductor Device
- Publication number 20210050436
- Publication date Feb 18, 2021
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20200235232
- Publication date Jul 23, 2020
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having a Barrier Region
- Publication number 20200006539
- Publication date Jan 2, 2020
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20190319122
- Publication date Oct 17, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability and Tapered Mesas
- Publication number 20190305083
- Publication date Oct 3, 2019
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability and Low Gate Charge
- Publication number 20190305087
- Publication date Oct 3, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having an SOI Island
- Publication number 20190198612
- Publication date Jun 27, 2019
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20190123185
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20190123186
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Cross-Tre...
- Publication number 20180342605
- Publication date Nov 29, 2018
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20180286971
- Publication date Oct 4, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20180076309
- Publication date Mar 15, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI Island in a Power Semiconductor Device
- Publication number 20180053822
- Publication date Feb 22, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device, Method for Testing a Semiconductor Device and...
- Publication number 20180033705
- Publication date Feb 1, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING TRANSISTOR CELL UNITS WITH DIFFEREN...
- Publication number 20170309619
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Sensor Potential in the Active Region
- Publication number 20160099188
- Publication date Apr 7, 2016
- INFINEON TECHNOLOGIES AG
- Christian Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Variable Resistive Element
- Publication number 20160087005
- Publication date Mar 24, 2016
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH TRANSISTOR DEVICE
- Publication number 20150279985
- Publication date Oct 1, 2015
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS

Alexander Philippou

Person

Patents Grantslast 30 patents

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor device having a barrier region

Power semiconductor device including first and second trench struct...

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor switch having a cross-trench structure

Method of processing a power semiconductor device

IGBT with dV/dt controllability

Power semiconductor switch having a cross-trench structure

Diode with structured barrier region

RC IGBT with an IGBT section and a diode section

Semiconductor die, semiconductor device and IGBT module

Power transistor with dV/dt controllability and tapered mesas

Power semiconductor device having a cross-trench arrangement

Power semiconductor device with dV/dt controllability and low gate...

IGBT having a barrier region

Power semiconductor device having trench electrodes biased at three...

Method for producing IGBT with dV/dt controllability

IGBT with dV/dt controllability

Power semiconductor device having an SOI island

Method for producing IGBT with dV/dt controllability

Trench transistor device

IGBT with dV/dt controllability

Semiconductor device, method for testing a semiconductor device and...

Power semiconductor device with dV/dt controllability through selec...

Power semiconductor device with dV/dt controllability and cross-tre...

SOI island in a power semiconductor device

Semiconductor device comprising transistor cell units with differen...

Semiconductor device with sensor potential in the active region

Semiconductor device with variable resistive element

Method of manufacturing an insulated gate bipolar transistor with m...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS

Power Semiconductor Device and Method of Producing a Power Semicond...

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Power Semiconductor Device Having a Barrier Region

Power Semiconductor Device Including First and Second Trench Struct...

Power Semiconductor Switch Having a Cross-Trench Structure

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Semiconductor Die, Semiconductor Device and IGBT Module

RC IGBT with an IGBT Section and a Diode Section

Diode with Structured Barrier Region

Method of Processing a Power Semiconductor Device

IGBT with dV/dt Controllability

Method for Producing IGBT with dV/dt Controllability

IGBT Having a Barrier Region

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

IGBT with dV/dt Controllability and Tapered Mesas

IGBT with dV/dt Controllability and Low Gate Charge

Power Semiconductor Device Having a Cross-Trench Arrangement

Power Semiconductor Device Having an SOI Island

Method for Producing IGBT with dV/dt Controllability

IGBT with dV/dt Controllability

Power Semiconductor Device with dV/dt Controllability and Cross-Tre...

IGBT with dV/dt Controllability

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

SOI Island in a Power Semiconductor Device

Semiconductor Device, Method for Testing a Semiconductor Device and...

SEMICONDUCTOR DEVICE COMPRISING TRANSISTOR CELL UNITS WITH DIFFEREN...

Semiconductor Device with Sensor Potential in the Active Region

Semiconductor Device with Variable Resistive Element

TRENCH TRANSISTOR DEVICE