Alexander Suvorov

Person

Durham, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 11,862,719
- Issue date Jan 2, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power semiconductor devices formed via ion implantati...
- Patent number 11,791,378
- Issue date Oct 17, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based MOSFET transistors with improved short...
- Patent number 11,164,967
- Issue date Nov 2, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power semiconductor devices formed via ion implantat...
- Patent number 11,075,264
- Issue date Jul 27, 2021
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 10,892,356
- Issue date Jan 12, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses related to shaping wafers fabricated by ion...
- Patent number 10,867,797
- Issue date Dec 15, 2020
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with deep implan...
- Patent number 10,840,334
- Issue date Nov 17, 2020
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,541,306
- Issue date Jan 21, 2020
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based MOSFET transistors with improved short...
- Patent number 10,424,660
- Issue date Sep 24, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled ion implantation into silicon carbide using channeling a...
- Patent number 10,217,824
- Issue date Feb 26, 2019
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with deep implan...
- Patent number 10,192,980
- Issue date Jan 29, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming buried junction devices in silicon carbide using...
- Patent number 10,103,230
- Issue date Oct 16, 2018
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices including implanted re...
- Patent number 9,984,881
- Issue date May 29, 2018
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power schottky diodes having local current spreading layers and met...
- Patent number 9,929,284
- Issue date Mar 27, 2018
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having gate trenches with implanted sid...
- Patent number 9,887,287
- Issue date Feb 6, 2018
- Cree, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled ion implantation into silicon carbide using channeling a...
- Patent number 9,768,259
- Issue date Sep 19, 2017
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming buried junction devices in silicon carbide using...
- Patent number 9,484,413
- Issue date Nov 1, 2016
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating semiconductor devices having reduced implan...
- Patent number 8,853,065
- Issue date Oct 7, 2014
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including implanted regions for providing low...
- Patent number 8,823,057
- Issue date Sep 2, 2014
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of treating a silicon carbide substrate for improved epitax...
- Patent number 8,822,315
- Issue date Sep 2, 2014
- Cree, Inc.
- Davis Andrew McClure
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of fabricating transistors using laser annealing of source/...
- Patent number 8,216,924
- Issue date Jul 10, 2012
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growing polygonal carbon from photoresist
- Patent number 8,080,441
- Issue date Dec 20, 2011
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having implanted channel layers and methods of fabricat...
- Patent number 8,049,272
- Issue date Nov 1, 2011
- Cree, Inc.
- Jason P. Henning
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High-temperature ion implantation apparatus and methods of fabricat...
- Patent number 8,008,637
- Issue date Aug 30, 2011
- Cree, Inc.
- Alexander Suvorov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
LED fabrication via ion implant isolation
- Patent number 7,943,954
- Issue date May 17, 2011
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED fabrication via ion implant isolation
- Patent number 7,943,406
- Issue date May 17, 2011
- Cree, Inc.
- David Beardsley Slater, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having implanted channels and implanted P-type regions...
- Patent number 7,880,172
- Issue date Feb 1, 2011
- Cree, Inc.
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature ion implantation of nitride based HEMTs
- Patent number 7,875,537
- Issue date Jan 25, 2011
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of treating a silicon carbide substrate for improved epitax...
- Patent number 7,675,068
- Issue date Mar 9, 2010
- Cree, Inc.
- Davis Andrew McClure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED fabrication via ion implant isolation
- Patent number 7,592,634
- Issue date Sep 22, 2009
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...
- Publication number 20240105829
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTATI...
- Publication number 20210367029
- Publication date Nov 25, 2021
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride High-Electron Mobility Transistors with Buried P-...
- Publication number 20210104623
- Publication date Apr 8, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES RELATED TO SHAPING WAFERS FABRICATED BY ION...
- Publication number 20210066081
- Publication date Mar 4, 2021
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES RELATED TO SHAPING WAFERS FABRICATED BY ION...
- Publication number 20200258742
- Publication date Aug 13, 2020
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...
- Publication number 20190371931
- Publication date Dec 5, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride High-Electron Mobility Transistors with Buried P-...
- Publication number 20190237569
- Publication date Aug 1, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...
- Publication number 20190198656
- Publication date Jun 27, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Ion Implantation into Silicon Carbide Using Channeling a...
- Publication number 20180069083
- Publication date Mar 8, 2018
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride High-Electron Mobility Transistors with Deep Implan...
- Publication number 20170373178
- Publication date Dec 28, 2017
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTAT...
- Publication number 20170345891
- Publication date Nov 30, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Buried Junction Devices in Silicon Carbide Using...
- Publication number 20170084700
- Publication date Mar 23, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Ion Implantation Into Silicon Carbide Using Channeling A...
- Publication number 20150028350
- Publication date Jan 29, 2015
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Buried Junction Devices in Silicon Carbide Using...
- Publication number 20150028351
- Publication date Jan 29, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...
- Publication number 20140329367
- Publication date Nov 6, 2014
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWING POLYGONAL CARBON FROM PHOTORESIST
- Publication number 20110169013
- Publication date Jul 14, 2011
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS
- Publication number 20110101377
- Publication date May 5, 2011
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING TRANSISTORS USING LASER ANNEALING OF SOURCE/...
- Publication number 20110092057
- Publication date Apr 21, 2011
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED Fabrication via Ion Implant Isolation
- Publication number 20090309124
- Publication date Dec 17, 2009
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE ION IMPLANTATION APPARATUS AND METHODS OF FABRICAT...
- Publication number 20090197357
- Publication date Aug 6, 2009
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED Fabrication Via Ion Implant Isolation
- Publication number 20090104726
- Publication date Apr 23, 2009
- Cree, Inc.
- David Beardsley Slater, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Temperature Ion Implantation of Nitride Based HEMTS
- Publication number 20090057718
- Publication date Mar 5, 2009
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors having implanted channels and implanted P-type regions...
- Publication number 20080179637
- Publication date Jul 31, 2008
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...
- Publication number 20080121895
- Publication date May 29, 2008
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-temperature ion implantation apparatus and methods of fabricat...
- Publication number 20080067432
- Publication date Mar 20, 2008
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors Having Implanted Channel Layers and Methods of Fabricat...
- Publication number 20070292999
- Publication date Dec 20, 2007
- Cree, Inc.
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and apparatus for fabricating semiconductor devices having...
- Publication number 20070269966
- Publication date Nov 22, 2007
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating silicon nitride regions in silicon carbide a...
- Publication number 20060226482
- Publication date Oct 12, 2006
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED fabrication via ion implant isolation
- Publication number 20060108595
- Publication date May 25, 2006
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of treating a silicon carbide substrate for improved epitax...
- Publication number 20060033111
- Publication date Feb 16, 2006
- Davis Andrew McClure
- H01 - BASIC ELECTRIC ELEMENTS

Alexander Suvorov

Person

Patents Grantslast 30 patents

Group III-nitride high-electron mobility transistors with buried p-...

Superjunction power semiconductor devices formed via ion implantati...

Power silicon carbide based MOSFET transistors with improved short...

Super junction power semiconductor devices formed via ion implantat...

Group III-nitride high-electron mobility transistors with buried p-...

Methods and apparatuses related to shaping wafers fabricated by ion...

Gallium nitride high-electron mobility transistors with deep implan...

Using a carbon vacancy reduction material to increase average carri...

Power silicon carbide based MOSFET transistors with improved short...

Controlled ion implantation into silicon carbide using channeling a...

Gallium nitride high-electron mobility transistors with deep implan...

Methods of forming buried junction devices in silicon carbide using...

Methods of fabricating semiconductor devices including implanted re...

Power schottky diodes having local current spreading layers and met...

Power semiconductor devices having gate trenches with implanted sid...

Controlled ion implantation into silicon carbide using channeling a...

Methods of forming buried junction devices in silicon carbide using...

Methods for fabricating semiconductor devices having reduced implan...

Semiconductor devices including implanted regions for providing low...

Methods of treating a silicon carbide substrate for improved epitax...

Methods of fabricating transistors using laser annealing of source/...

Growing polygonal carbon from photoresist

Transistors having implanted channel layers and methods of fabricat...

High-temperature ion implantation apparatus and methods of fabricat...

LED fabrication via ion implant isolation

LED fabrication via ion implant isolation

Transistors having implanted channels and implanted P-type regions...

High temperature ion implantation of nitride based HEMTs

Methods of treating a silicon carbide substrate for improved epitax...

LED fabrication via ion implant isolation

Patents Applicationslast 30 patents

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

SUPERJUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTATI...

Group III-Nitride High-Electron Mobility Transistors with Buried P-...

METHODS AND APPARATUSES RELATED TO SHAPING WAFERS FABRICATED BY ION...

METHODS AND APPARATUSES RELATED TO SHAPING WAFERS FABRICATED BY ION...

POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...

Group III-Nitride High-Electron Mobility Transistors with Buried P-...

POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...

Controlled Ion Implantation into Silicon Carbide Using Channeling a...

Gallium Nitride High-Electron Mobility Transistors with Deep Implan...

SUPER JUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTAT...

Methods of Forming Buried Junction Devices in Silicon Carbide Using...

Controlled Ion Implantation Into Silicon Carbide Using Channeling A...

Methods of Forming Buried Junction Devices in Silicon Carbide Using...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...

GROWING POLYGONAL CARBON FROM PHOTORESIST

HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS

METHODS OF FABRICATING TRANSISTORS USING LASER ANNEALING OF SOURCE/...

LED Fabrication via Ion Implant Isolation

HIGH-TEMPERATURE ION IMPLANTATION APPARATUS AND METHODS OF FABRICAT...

LED Fabrication Via Ion Implant Isolation

High Temperature Ion Implantation of Nitride Based HEMTS

Transistors having implanted channels and implanted P-type regions...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED RE...

High-temperature ion implantation apparatus and methods of fabricat...

Transistors Having Implanted Channel Layers and Methods of Fabricat...

Methods and apparatus for fabricating semiconductor devices having...

Methods of fabricating silicon nitride regions in silicon carbide a...

LED fabrication via ion implant isolation

Methods of treating a silicon carbide substrate for improved epitax...