Alina Vinslava

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Ballston Lake, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial region for embedded source/drain region having uniform th...
- Patent number 10,461,155
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-curvature cavity for semiconductor epitaxy
- Patent number 10,355,104
- Issue date Jul 16, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-curvature cavity for epitaxial semiconductor growth
- Patent number 10,297,675
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190181243
- Publication date Jun 13, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...
- Publication number 20190148492
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY
- Publication number 20190131432
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190131433
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS