Alison Davis

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming semiconductor contacts
- Patent number 7,709,866
- Issue date May 4, 2010
- Intel Corporation
- Nadia Rahhal-Orabi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH CHANNEL-SYMMETRIC GATE
- Publication number 20250006810
- Publication date Jan 2, 2025
- Intel Corporation
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
- Publication number 20240347539
- Publication date Oct 17, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL-SYMMETRIC GATE
- Publication number 20240332290
- Publication date Oct 3, 2024
- Intel Corporation
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURC...
- Publication number 20240213026
- Publication date Jun 27, 2024
- Intel Corporation
- Matthew J. Prince
- B24 - GRINDING POLISHING
Information Patent Application
DIELECTRIC LAYER STACK FOR WIDE GATE CUT STRUCTURES
- Publication number 20240203739
- Publication date Jun 20, 2024
- Intel Corporation
- Swapnadip Ghosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS
- Publication number 20240112916
- Publication date Apr 4, 2024
- Intel Corporation
- Swapnadip Ghosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
- Publication number 20240113105
- Publication date Apr 4, 2024
- Intel Corporation
- Alison V. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUTS WITH SELF-FORMING POLYMER LAYER
- Publication number 20240105452
- Publication date Mar 28, 2024
- Intel Corporation
- Reza Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO METAL GATE CUTS
- Publication number 20240105453
- Publication date Mar 28, 2024
- Intel Corporation
- Reza Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STAGE MASK ETCH PROCESS
- Publication number 20240105800
- Publication date Mar 28, 2024
- Intel Corporation
- Reza Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
- Publication number 20220392898
- Publication date Dec 8, 2022
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Contacts
- Publication number 20100171156
- Publication date Jul 8, 2010
- Nadia Rahhal-Orabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming semiconductor contacts
- Publication number 20090001431
- Publication date Jan 1, 2009
- Nadia Rahhal-Orabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming trench contacts for MOS transistors
- Publication number 20070218685
- Publication date Sep 20, 2007
- Swaminathan Sivakumar
- H01 - BASIC ELECTRIC ELEMENTS

Alison Davis

Person

Patents Grantslast 30 patents

Method for forming semiconductor contacts

Patents Applicationslast 30 patents

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURC...

DIELECTRIC LAYER STACK FOR WIDE GATE CUT STRUCTURES

METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS

FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL

GATE CUTS WITH SELF-FORMING POLYMER LAYER

HIGH ASPECT RATIO METAL GATE CUTS

MULTI-STAGE MASK ETCH PROCESS

INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES

Method for Forming Semiconductor Contacts

Method for forming semiconductor contacts

Method of forming trench contacts for MOS transistors