Allan Ward III

Person

Durham, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Edge termination structures for silicon carbide devices
- Patent number 9,515,135
- Issue date Dec 6, 2016
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structure for high power microelectronic devices
- Patent number 9,024,327
- Issue date May 5, 2015
- Cree, Inc.
- Allan Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having implanted channel layers and methods of fabricat...
- Patent number 8,049,272
- Issue date Nov 1, 2011
- Cree, Inc.
- Jason P. Henning
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Schottky diodes containing high barrier metal islands in a low barr...
- Patent number 7,915,703
- Issue date Mar 29, 2011
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having implanted channels and implanted P-type regions...
- Patent number 7,880,172
- Issue date Feb 1, 2011
- Cree, Inc.
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Metallization structure for high power microelectronic devices
- Publication number 20130134433
- Publication date May 30, 2013
- Allan Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODES CONTAINING HIGH BARRIER METAL ISLANDS IN A LOW BARR...
- Publication number 20100289109
- Publication date Nov 18, 2010
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors having implanted channels and implanted P-type regions...
- Publication number 20080179637
- Publication date Jul 31, 2008
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-Rich Nickel-Silicide Ohmic Contacts for SIC Semiconductor D...
- Publication number 20080116464
- Publication date May 22, 2008
- Cree, Inc.
- ALLAN WARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors Having Implanted Channel Layers and Methods of Fabricat...
- Publication number 20070292999
- Publication date Dec 20, 2007
- Cree, Inc.
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Leakage Power Devices By Inversion Layer Surface Passivation
- Publication number 20070018272
- Publication date Jan 25, 2007
- Jason P. Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Environmentally robust passivation structures for high-voltage sili...
- Publication number 20070001176
- Publication date Jan 4, 2007
- Allan Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation of wide band-gap based semiconductor devices with hydro...
- Publication number 20070001174
- Publication date Jan 4, 2007
- Zoltan Ring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination structures for silicon carbide devices and methods...
- Publication number 20060118792
- Publication date Jun 8, 2006
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor d...
- Publication number 20060006393
- Publication date Jan 12, 2006
- Allan Ward
- H01 - BASIC ELECTRIC ELEMENTS

Allan Ward III

Person

Patents Grantslast 30 patents

Edge termination structures for silicon carbide devices

Metallization structure for high power microelectronic devices

Transistors having implanted channel layers and methods of fabricat...

Schottky diodes containing high barrier metal islands in a low barr...

Transistors having implanted channels and implanted P-type regions...

Patents Applicationslast 30 patents

Metallization structure for high power microelectronic devices

SCHOTTKY DIODES CONTAINING HIGH BARRIER METAL ISLANDS IN A LOW BARR...

Transistors having implanted channels and implanted P-type regions...

Silicon-Rich Nickel-Silicide Ohmic Contacts for SIC Semiconductor D...

Transistors Having Implanted Channel Layers and Methods of Fabricat...

Reduced Leakage Power Devices By Inversion Layer Surface Passivation

Environmentally robust passivation structures for high-voltage sili...

Passivation of wide band-gap based semiconductor devices with hydro...

Edge termination structures for silicon carbide devices and methods...

Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor d...