Allen John Leith

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced defect silicon or silicon germanium deposition in micro-fea...
- Patent number 8,263,474
- Issue date Sep 11, 2012
- Tokyo Electron Limited
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium surface layer for high-k dielectric integration
- Patent number 7,737,051
- Issue date Jun 15, 2010
- Tokyo Electron Limited
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for removing an oxide from a substrate
- Patent number 7,524,769
- Issue date Apr 28, 2009
- Tokyo Electron Limited
- Anthony Dip
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Sequential oxide removal using fluorine and hydrogen
- Patent number 7,501,349
- Issue date Mar 10, 2009
- Tokyo Electron Limited
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of silicon-containing films from hexachlorodisilane
- Patent number 7,468,311
- Issue date Dec 23, 2008
- Tokyo Electron Limited
- Anthony Dip
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature formation of patterned epitaxial Si containing films
- Patent number 7,405,140
- Issue date Jul 29, 2008
- Tokyo Electron Limited
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sequential deposition process for forming Si-containing films
- Patent number 7,358,194
- Issue date Apr 15, 2008
- Tokyo Electron Limited
- Anthony Dip
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Micro-feature fill process and apparatus using hexachlorodisilane o...
- Patent number 7,205,187
- Issue date Apr 17, 2007
- Tokyo Electron Limited
- Allen John Leith
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEA...
- Publication number 20080169534
- Publication date Jul 17, 2008
- TOKYO ELECTRON LIMITED
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sequential oxide removal using fluorine and hydrogen
- Publication number 20070238302
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interrupted deposition process for selective deposition of Si-conta...
- Publication number 20070048956
- Publication date Mar 1, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- C30 - CRYSTAL GROWTH
Information Patent Application
Low temperature formation of patterned epitaxial Si containing films
- Publication number 20070042569
- Publication date Feb 22, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sequential deposition process for forming Si-containing films
- Publication number 20070042570
- Publication date Feb 22, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- C30 - CRYSTAL GROWTH
Information Patent Application
Low-temperature oxide removal using fluorine
- Publication number 20070039924
- Publication date Feb 22, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for removing an oxide from a substrate
- Publication number 20060228900
- Publication date Oct 12, 2006
- TOKYO ELECTRON LIMITED
- Anthony Dip
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Micro-feature fill process and apparatus using hexachlorodisilane o...
- Publication number 20060160288
- Publication date Jul 20, 2006
- TOKYO ELECTRON LIMITED
- Allen John Leith
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Silicon-germanium thin layer semiconductor structure with variable...
- Publication number 20050199872
- Publication date Sep 15, 2005
- Tokyo Electron Limited of TBS Broadcast Center
- Pradip K. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon germanium surface layer for high-k dielectric integration
- Publication number 20050199877
- Publication date Sep 15, 2005
- Tokyo Electron Limited of TBS Broadcast Center
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition of silicon-containing films from hexachlorodisilane
- Publication number 20050066892
- Publication date Mar 31, 2005
- TOKYO ELECTRON LIMITED
- Anthony Dip
- C30 - CRYSTAL GROWTH

Allen John Leith

Person

Patents Grantslast 30 patents

Reduced defect silicon or silicon germanium deposition in micro-fea...

Silicon germanium surface layer for high-k dielectric integration

Method and system for removing an oxide from a substrate

Sequential oxide removal using fluorine and hydrogen

Deposition of silicon-containing films from hexachlorodisilane

Low temperature formation of patterned epitaxial Si containing films

Sequential deposition process for forming Si-containing films

Micro-feature fill process and apparatus using hexachlorodisilane o...

Patents Applicationslast 30 patents

REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEA...

Sequential oxide removal using fluorine and hydrogen

Interrupted deposition process for selective deposition of Si-conta...

Low temperature formation of patterned epitaxial Si containing films

Sequential deposition process for forming Si-containing films

Low-temperature oxide removal using fluorine

Method and system for removing an oxide from a substrate

Micro-feature fill process and apparatus using hexachlorodisilane o...

Silicon-germanium thin layer semiconductor structure with variable...

Silicon germanium surface layer for high-k dielectric integration

Deposition of silicon-containing films from hexachlorodisilane