Allen W. Hanson

Person

Cary, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 11,961,888
- Issue date Apr 16, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier for preventing eutectic break-through in through-substrate...
- Patent number 11,676,860
- Issue date Jun 13, 2023
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation design rules for HAST improvement
- Patent number 11,018,220
- Issue date May 25, 2021
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET operational temperature determination by field plate resistance...
- Patent number 10,855,230
- Issue date Dec 1, 2020
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- G01 - MEASURING TESTING
Information Patent Grant
FET operational temperature determination by gate structure resista...
- Patent number 10,790,787
- Issue date Sep 29, 2020
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier for preventing eutectic break-through in through-substrate...
- Patent number 10,147,642
- Issue date Dec 4, 2018
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing gallium nitride devices
- Patent number 9,978,858
- Issue date May 22, 2018
- Infineon Technologies Americas Corp.
- Jerry Wayne Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with hole barrier layer
- Patent number 9,876,082
- Issue date Jan 23, 2018
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor structures comprising spatially patterned...
- Patent number 9,773,898
- Issue date Sep 26, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation in III-nitride material semiconductor...
- Patent number 9,627,473
- Issue date Apr 18, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and associated methods
- Patent number 9,608,102
- Issue date Mar 28, 2017
- Infineon Technologies Americas Corp.
- Jerry Wayne Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices
- Patent number 9,318,417
- Issue date Apr 19, 2016
- Infineon Technologies Americas Corp.
- Robert Joseph Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices
- Patent number 8,946,765
- Issue date Feb 3, 2015
- International Rectifier Corporation
- Robert Joseph Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices with conductive regions
- Patent number 8,859,400
- Issue date Oct 14, 2014
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices with vias
- Patent number 8,680,570
- Issue date Mar 25, 2014
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices with electrically conductive regions
- Patent number 8,350,288
- Issue date Jan 8, 2013
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming gallium nitride devices with conductive regions
- Patent number 8,343,856
- Issue date Jan 1, 2013
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with dual etch-stop layers for improved pow...
- Patent number 8,288,260
- Issue date Oct 16, 2012
- M/A-COM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistiv...
- Patent number 8,288,253
- Issue date Oct 16, 2012
- M/A-COM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices including conductive regions
- Patent number 8,067,786
- Issue date Nov 29, 2011
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices including diamond regions and meth...
- Patent number 8,026,581
- Issue date Sep 27, 2011
- International Rectifier Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,994,540
- Issue date Aug 9, 2011
- International Rectifier Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,569,871
- Issue date Aug 4, 2009
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices including conductive regions and m...
- Patent number 7,566,913
- Issue date Jul 28, 2009
- Nitronex Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,352,016
- Issue date Apr 1, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride material structures including silicon substrates
- Patent number 7,247,889
- Issue date Jul 24, 2007
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,135,720
- Issue date Nov 14, 2006
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...
- Publication number 20240222444
- Publication date Jul 4, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...
- Publication number 20210296452
- Publication date Sep 23, 2021
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE...
- Publication number 20200144969
- Publication date May 7, 2020
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTA...
- Publication number 20200144970
- Publication date May 7, 2020
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
BARRIER FOR PREVENTING EUTECTIC BREAK-THROUGH IN THROUGH-SUBSTRATE...
- Publication number 20190096743
- Publication date Mar 28, 2019
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPERATIONAL TEMPERATURE DETERMINATION IN BIPOLAR TRANSISTORS BY RES...
- Publication number 20190078941
- Publication date Mar 14, 2019
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- G01 - MEASURING TESTING
Information Patent Application
FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE...
- Publication number 20190028066
- Publication date Jan 24, 2019
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTA...
- Publication number 20190028065
- Publication date Jan 24, 2019
- MACOM Technology Solutions Holdings, Inc.
- Simon John Mahon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION DESIGN RULES FOR HAST IMPROVEMENT
- Publication number 20180308927
- Publication date Oct 25, 2018
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...
- Publication number 20180122928
- Publication date May 3, 2018
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing Gallium Nitride Devices
- Publication number 20170154989
- Publication date Jun 1, 2017
- Infineon Technologies Americas Corp.
- Jerry Wayne Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...
- Publication number 20170069746
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...
- Publication number 20170069713
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTO...
- Publication number 20170069500
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH HOLE BARRIER LAYER
- Publication number 20160322457
- Publication date Nov 3, 2016
- M/A-COM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices
- Publication number 20150137141
- Publication date May 21, 2015
- International Rectifier Corporation
- Robert Joseph Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices
- Publication number 20140203294
- Publication date Jul 24, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Joseph Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING GALLIUM NITRIDE DEVICES WITH CONDUCTIVE REGIONS
- Publication number 20130134437
- Publication date May 30, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices with Vias
- Publication number 20130126895
- Publication date May 23, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices with Electrically Conductive Regions
- Publication number 20120068190
- Publication date Mar 22, 2012
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Gallium Nitride Devices with Conductive Regions
- Publication number 20120070967
- Publication date Mar 22, 2012
- International Rectifier Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL DEVICES INCLUDING CONDUCTIVE REGIONS AND M...
- Publication number 20100019248
- Publication date Jan 28, 2010
- Nitronex Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20100019850
- Publication date Jan 28, 2010
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL DEVICES INCLUDING DIAMOND REGIONS AND METH...
- Publication number 20090194773
- Publication date Aug 6, 2009
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20080246058
- Publication date Oct 9, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and associated methods
- Publication number 20070272957
- Publication date Nov 29, 2007
- Nitronex Corporation
- Jerry Wayne Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices including conductive regions and m...
- Publication number 20070200134
- Publication date Aug 30, 2007
- Nitronex Corporation
- Robert J. Therrien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20070120147
- Publication date May 31, 2007
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-nitride material structures including silicon substrates
- Publication number 20060118819
- Publication date Jun 8, 2006
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20050167775
- Publication date Aug 4, 2005
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS

Allen W. Hanson

Person

Patents Grantslast 30 patents

Extrinsic field termination structures for improving reliability of...

Barrier for preventing eutectic break-through in through-substrate...

Device isolation design rules for HAST improvement

FET operational temperature determination by field plate resistance...

FET operational temperature determination by gate structure resista...

Barrier for preventing eutectic break-through in through-substrate...

Methods of manufacturing gallium nitride devices

Transistor with hole barrier layer

III-nitride semiconductor structures comprising spatially patterned...

Parasitic channel mitigation in III-nitride material semiconductor...

Gallium nitride material devices and associated methods

Gallium nitride devices

Gallium nitride devices

Gallium nitride devices with conductive regions

Gallium nitride devices with vias

Gallium nitride devices with electrically conductive regions

Method for forming gallium nitride devices with conductive regions

Field effect transistor with dual etch-stop layers for improved pow...

InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistiv...

Gallium nitride material devices including conductive regions

Gallium nitride material devices including diamond regions and meth...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material devices including conductive regions and m...

Gallium nitride material transistors and methods associated with th...

III-nitride material structures including silicon substrates

Gallium nitride material transistors and methods associated with th...

Patents Applicationslast 30 patents

EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...

EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...

FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE...

FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTA...

BARRIER FOR PREVENTING EUTECTIC BREAK-THROUGH IN THROUGH-SUBSTRATE...

OPERATIONAL TEMPERATURE DETERMINATION IN BIPOLAR TRANSISTORS BY RES...

FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE...

FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTA...

DEVICE ISOLATION DESIGN RULES FOR HAST IMPROVEMENT

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...

Methods of Manufacturing Gallium Nitride Devices

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...

PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...

METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTO...

TRANSISTOR WITH HOLE BARRIER LAYER

Gallium Nitride Devices

Gallium Nitride Devices

METHOD FOR FORMING GALLIUM NITRIDE DEVICES WITH CONDUCTIVE REGIONS

Gallium Nitride Devices with Vias

Gallium Nitride Devices with Electrically Conductive Regions

Method for Forming Gallium Nitride Devices with Conductive Regions

GALLIUM NITRIDE MATERIAL DEVICES INCLUDING CONDUCTIVE REGIONS AND M...

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

GALLIUM NITRIDE MATERIAL DEVICES INCLUDING DIAMOND REGIONS AND METH...

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

Gallium nitride material devices and associated methods

Gallium nitride material devices including conductive regions and m...

Gallium nitride material transistors and methods associated with th...

III-nitride material structures including silicon substrates

Gallium nitride material transistors and methods associated with th...