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Amy L. Child
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Wilton, NY, US
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last 30 patents
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Patent Grant
Strain retention semiconductor member for channel SiGe layer of pFET
Patent number
10,236,343
Issue date
Mar 19, 2019
GLOBALFOUNDRIES Inc.
Dina H. Triyoso
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Punchthrough stop layers for fin-type field-effect transistors
Patent number
10,056,381
Issue date
Aug 21, 2018
GLOBALFOUNDRIES Inc.
Ryan Sporer
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Epitaxial block layer for a fin field effect transistor device
Patent number
9,508,850
Issue date
Nov 29, 2016
GLOBALFOUNDRIES Inc.
Zhenyu Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Epitaxial block layer for a fin field effect transistor device
Patent number
9,293,586
Issue date
Mar 22, 2016
GLOBALFOUNDRIES Inc.
Zhenyu Hu
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
STRAIN RETENTION SEMICONDUCTOR MEMBER FOR CHANNEL SiGe LAYER OF pFET
Publication number
20180190768
Publication date
Jul 5, 2018
GLOBALFOUNDRIES INC.
Dina H. Triyoso
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PUNCHTHROUGH STOP LAYERS FOR FIN-TYPE FIELD-EFFECT TRANSISTORS
Publication number
20180069005
Publication date
Mar 8, 2018
GLOBALFOUNDRIES INC.
Ryan Sporer
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHODS FOR FABRICATING SEMICONDUCTOR STRUCTURE WITH CONDENSED SILI...
Publication number
20160254145
Publication date
Sep 1, 2016
GLOBALFOUNDRIES INC.
Dina H. TRIYOSO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
Publication number
20160163862
Publication date
Jun 9, 2016
GLOBALFOUNDRIES INC.
Zhenyu Hu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
Publication number
20150021695
Publication date
Jan 22, 2015
GLOBALFOUNDRIES INC.
Zhenyu Hu
H01 - BASIC ELECTRIC ELEMENTS