An Chyi Wei

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,243,872
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 12,107,149
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with void and method of forming the same
- Patent number 12,068,398
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers around contact plugs and method forming same
- Patent number 12,015,071
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device fabrication and structures thereof
- Patent number 11,996,468
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,996,466
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 11,990,341
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,961,919
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,923,359
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 11,735,651
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with void and method of forming the same
- Patent number 11,664,444
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 11,652,155
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 11,508,582
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 11,437,498
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers around contact plugs and method forming same
- Patent number 11,355,616
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 11,349,014
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,329,140
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,282,967
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFet) device stru...
- Patent number 11,063,043
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device and semiconductor device
- Patent number 10,879,074
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 10,861,960
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 10,714,347
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor structure and semiconductor device
- Patent number 10,672,613
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure and method fo...
- Patent number 10,515,952
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 10,276,449
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite hard mask etching profile for preventing pattern collapse...
- Patent number 9,449,821
- Issue date Sep 20, 2016
- Macronix International Co., Ltd.
- Zusing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating deep trench semiconductor devices, and deep t...
- Patent number 9,349,746
- Issue date May 24, 2016
- Macronix International Co., Ltd.
- Ta-Hone Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of word-line formation by semi-damascene process with thin p...
- Patent number 9,252,153
- Issue date Feb 2, 2016
- Macronix International Co., Ltd.
- Cheng-Yi Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 9,190,467
- Issue date Nov 17, 2015
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning method
- Patent number 8,748,323
- Issue date Jun 10, 2014
- Macronix International Co., Ltd.
- Han-Hui Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240387528
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACER AND METHOD OF FORMING SAME
- Publication number 20240379820
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20240371980
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI LOSS MITIGATION BY RADICAL OXIDATION TREATMENT
- Publication number 20240355906
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Hua Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF
- Publication number 20240313090
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME
- Publication number 20240297235
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240290869
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESSES
- Publication number 20240290620
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20240178224
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shu WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240072156
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20230268427
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230260993
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacer and Method of Forming Same
- Publication number 20230253479
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Processes
- Publication number 20220384616
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD
- Publication number 20220359735
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF
- Publication number 20220336639
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacers Around Contact Plugs and Method Forming Same
- Publication number 20220310820
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacer and Method of Forming Same
- Publication number 20220285530
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co, LTD.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220262920
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufactuing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20220209023
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacer and Method of Forming Same
- Publication number 20210408266
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210376114
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20210343711
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shu WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210226033
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20210202756
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacers Around Contact Plugs and Method Forming Same
- Publication number 20210134973
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD
- Publication number 20210111272
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Processes
- Publication number 20200350172
- Publication date Nov 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20200294804
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20200135725
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Shu WU
- H01 - BASIC ELECTRIC ELEMENTS

An Chyi Wei

Person

Patents Grantslast 30 patents

Semiconductor device structure and methods of forming the same

Air spacer and method of forming same

Fin field-effect transistor with void and method of forming the same

Air spacers around contact plugs and method forming same

Multi-gate device fabrication and structures thereof

Semiconductor device and method of manufacture

Cut metal gate processes

Nanostructure field-effect transistor device and method of forming

Method for forming fin field effect transistor (FinFET) device stru...

FinFET device and method

Fin field-effect transistor with void and method of forming the same

Air spacer and method of forming same

Cut metal gate processes

FinFET device and method

Air spacers around contact plugs and method forming same

Air spacer and method of forming same

Semiconductor device and method of manufacture

Nanostructure field-effect transistor device and method of forming

Method for forming fin field effect transistor (FinFet) device stru...

Method of forming semiconductor device and semiconductor device

FinFET device and method

Cut metal gate processes

Method of forming semiconductor structure and semiconductor device

Fin field effect transistor (FinFET) device structure and method fo...

Method for forming fin field effect transistor (FinFET) device stru...

Composite hard mask etching profile for preventing pattern collapse...

Method of fabricating deep trench semiconductor devices, and deep t...

Method of word-line formation by semi-damascene process with thin p...

Semiconductor structure and manufacturing method of the same

Patterning method

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

AIR SPACER AND METHOD OF FORMING SAME

Fin Field-Effect Transistor With Void and Method of Forming The Same

STI LOSS MITIGATION BY RADICAL OXIDATION TREATMENT

MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF

AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

CUT METAL GATE PROCESSES

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Fin Field-Effect Transistor With Void and Method of Forming The Same

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Air Spacer and Method of Forming Same

Cut Metal Gate Processes

FINFET DEVICE AND METHOD

MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF

Air Spacers Around Contact Plugs and Method Forming Same

Air Spacer and Method of Forming Same

Semiconductor Device and Method of Manufacture

Nanostructure Field-Effect Transistor Device and Method of Forming

Air Spacer and Method of Forming Same

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

Semiconductor Device and Method of Manufacture

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

Air Spacers Around Contact Plugs and Method Forming Same

FINFET DEVICE AND METHOD

Cut Metal Gate Processes

METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...