Ande KITAMURA

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Contact stacks to reduce hydrogen in thin film transistor
- Patent number 11,444,205
- Issue date Sep 13, 2022
- Intel Corporatiion
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...
- Publication number 20230411390
- Publication date Dec 21, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STACKS TO REDUCE HYDROGEN IN THIN FILM TRANSISTOR
- Publication number 20200098657
- Publication date Mar 26, 2020
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS

Ande KITAMURA

Person

Patents Grantslast 30 patents

Contact stacks to reduce hydrogen in thin film transistor

Patents Applicationslast 30 patents

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

2D LAYERED GATE OXIDE

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...

CONTACT STACKS TO REDUCE HYDROGEN IN THIN FILM TRANSISTOR