Andre Rainer STEGNER

Person

Muenchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 11,302,795
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a semiconductor body of silicon carbide
- Patent number 11,282,926
- Issue date Mar 22, 2022
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide devices and methods for forming silicon carbide dev...
- Patent number 11,264,464
- Issue date Mar 1, 2022
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination region comprising a...
- Patent number 11,094,779
- Issue date Aug 17, 2021
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide body and method of m...
- Patent number 11,063,142
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductor body composed of silico...
- Patent number 10,943,979
- Issue date Mar 9, 2021
- Infineon Technologies AG
- Andre Rainer Stegner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a semiconductor device and semiconductor device
- Patent number 10,665,687
- Issue date May 26, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having an undulated...
- Patent number 10,497,801
- Issue date Dec 3, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a source region with chalcogen atoms
- Patent number 10,475,911
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices, semiconductor devices and a method for...
- Patent number 10,424,636
- Issue date Sep 24, 2019
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including undulated profile of net doping in a...
- Patent number 10,211,325
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device with implanted chalcogen...
- Patent number 10,205,011
- Issue date Feb 12, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor, method of patterning a substrate, a...
- Patent number 9,954,068
- Issue date Apr 24, 2018
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor to metal transition for semiconductor devices
- Patent number 9,685,504
- Issue date Jun 20, 2017
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a semiconductor device and semiconductor device
- Patent number 9,653,296
- Issue date May 16, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with auxiliary structure including deep level...
- Patent number 9,647,100
- Issue date May 9, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor to metal transition
- Patent number 9,443,971
- Issue date Sep 13, 2016
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field ring edge termination structure a...
- Patent number 9,293,524
- Issue date Mar 22, 2016
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trenches and method of manufacturing...
- Patent number 8,853,774
- Issue date Oct 7, 2014
- Infineon Technologies AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE
- Publication number 20230299147
- Publication date Sep 21, 2023
- Infineon
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SIL...
- Publication number 20220199800
- Publication date Jun 23, 2022
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device and Semiconductor De...
- Publication number 20210013320
- Publication date Jan 14, 2021
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY OF SILICON CARBIDE
- Publication number 20200295142
- Publication date Sep 17, 2020
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...
- Publication number 20200203513
- Publication date Jun 25, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter KONRATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICES AND METHODS FOR FORMING SILICON CARBIDE DEV...
- Publication number 20200098869
- Publication date Mar 26, 2020
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Semiconductor Body Composed of Silico...
- Publication number 20190259841
- Publication date Aug 22, 2019
- Andre Rainer Stegner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having an Undulated...
- Publication number 20190157435
- Publication date May 23, 2019
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Source Region with Chalcogen Atoms
- Publication number 20190157438
- Publication date May 23, 2019
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Therefor
- Publication number 20170317165
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20170194450
- Publication date Jul 6, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICES AND A METHOD FOR...
- Publication number 20170179224
- Publication date Jun 22, 2017
- INFINEON TECHNOLOGIES AG
- Andreas HAERTL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor to Metal Transition for Semiconductor Devices
- Publication number 20160372539
- Publication date Dec 22, 2016
- INFINEON TECHNOLOGIES AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and a Method for Forming a Semiconductor Device
- Publication number 20160240642
- Publication date Aug 18, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor to Metal Transition
- Publication number 20160141406
- Publication date May 19, 2016
- INFINEON TECHNOLOGIES AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Auxiliary Structure Including Deep Level...
- Publication number 20160111528
- Publication date Apr 21, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Transistor, Method of Patterning a Substrate, a...
- Publication number 20160093706
- Publication date Mar 31, 2016
- INFINEON TECHNOLOGIES AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20150340234
- Publication date Nov 26, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Ring Edge Termination Structure a...
- Publication number 20150318347
- Publication date Nov 5, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Undulated Profile of Net Doping in a...
- Publication number 20150214347
- Publication date Jul 30, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trenches and Method of Manufacturing...
- Publication number 20140151789
- Publication date Jun 5, 2014
- INFINEON TECHNOLOGIES AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS

Andre Rainer STEGNER

Person

Patents Grantslast 30 patents

Semiconductor device having a silicon carbide drift zone over a sil...

Method of manufacturing a semiconductor device and semiconductor de...

Semiconductor device with a semiconductor body of silicon carbide

Silicon carbide devices and methods for forming silicon carbide dev...

Semiconductor device having an edge termination region comprising a...

Semiconductor device including silicon carbide body and method of m...

Semiconductor device having a semiconductor body composed of silico...

Method for processing a semiconductor device and semiconductor device

Method of manufacturing a semiconductor device having an undulated...

Semiconductor device having a source region with chalcogen atoms

Power semiconductor devices, semiconductor devices and a method for...

Semiconductor device including undulated profile of net doping in a...

Method for forming a semiconductor device with implanted chalcogen...

Method of forming a transistor, method of patterning a substrate, a...

Semiconductor to metal transition for semiconductor devices

Method for processing a semiconductor device and semiconductor device

Semiconductor device with auxiliary structure including deep level...

Semiconductor to metal transition

Semiconductor device with a field ring edge termination structure a...

Semiconductor device including trenches and method of manufacturing...

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE

SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SIL...

Method of Manufacturing a Semiconductor Device and Semiconductor De...

SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY OF SILICON CARBIDE

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...

SILICON CARBIDE DEVICES AND METHODS FOR FORMING SILICON CARBIDE DEV...

Semiconductor Device Having a Semiconductor Body Composed of Silico...

Method of Manufacturing a Semiconductor Device Having an Undulated...

Semiconductor Device Having a Source Region with Chalcogen Atoms

Semiconductor Device and Manufacturing Therefor

METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICES AND A METHOD FOR...

Semiconductor to Metal Transition for Semiconductor Devices

Semiconductor Devices and a Method for Forming a Semiconductor Device

Semiconductor to Metal Transition

Semiconductor Device with Auxiliary Structure Including Deep Level...

Method of Forming a Transistor, Method of Patterning a Substrate, a...

METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor Device with a Field Ring Edge Termination Structure a...

Semiconductor Device Including Undulated Profile of Net Doping in a...

Semiconductor Device Including Trenches and Method of Manufacturing...