Andrea Corrion

Person

Thounsand Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 10,418,473
- Issue date Sep 17, 2019
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical III-nitride semiconductor device with a vertically formed...
- Patent number 10,325,997
- Issue date Jun 18, 2019
- HRL Laboratories, LLC
- Sameh G. Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 9,954,090
- Issue date Apr 24, 2018
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,929,243
- Issue date Mar 27, 2018
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Near junction cooling for GaN devices
- Patent number 9,496,197
- Issue date Nov 15, 2016
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical III-nitride semiconductor device with a vertically formed...
- Patent number 9,490,357
- Issue date Nov 8, 2016
- HRL Laboratories, LLC
- Sameh G. Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,419,122
- Issue date Aug 16, 2016
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 9,378,949
- Issue date Jun 28, 2016
- HRL Laboratories, LLC
- David F. Brown
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN H...
- Patent number 9,252,247
- Issue date Feb 2, 2016
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,202,880
- Issue date Dec 1, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,142,626
- Issue date Sep 22, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating slanted field-plate GaN heterojunction field-...
- Patent number 8,980,759
- Issue date Mar 17, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 8,796,736
- Issue date Aug 5, 2014
- HRL Laboratories, LLC
- David F. Brown
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Self-aligned sidewall gate GaN HEMT
- Patent number 8,766,321
- Issue date Jul 1, 2014
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement and depletion mode GaN HMETs on the same substrate
- Patent number 8,748,244
- Issue date Jun 10, 2014
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate metallization methods for self-aligned sidewall gate GaN HEMT
- Patent number 8,698,201
- Issue date Apr 15, 2014
- HRL Laboratories, LLC
- Dean C. Regan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN h...
- Patent number 8,686,473
- Issue date Apr 1, 2014
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlGaN/GaN hybrid MOS-HFET
- Patent number 8,653,559
- Issue date Feb 18, 2014
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate metallization methods for self-aligned sidewall gate GaN HEMT
- Patent number 8,558,281
- Issue date Oct 15, 2013
- HRL Laboratories, LLC
- Dean C. Regan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride enhancement layers
- Patent number 8,470,652
- Issue date Jun 25, 2013
- HRL Laboratories, LLC
- David F. Brown
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Self aligned sidewall gate GaN HEMT
- Patent number 8,383,471
- Issue date Feb 26, 2013
- HRL Laboratories, LLC
- Keisuke Shinihara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
- Publication number 20240128367
- Publication date Apr 18, 2024
- HRL LABORATORIES, LLC
- Daniel DENNINGHOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
- Publication number 20220069114
- Publication date Mar 3, 2022
- HRL LABORATORIES, LLC
- Daniel DENNINGHOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL III-NITRIDE SEMICONDUCTOR DEVICE WITH A VERTICALLY FORMED...
- Publication number 20170025518
- Publication date Jan 26, 2017
- HRL LABORATORIES, LLC
- Sameh G. KHALIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL III-NITRIDE SEMICONDUCTOR DEVICE WITH A VERTICALLY FORMED...
- Publication number 20150014700
- Publication date Jan 15, 2015
- HRL LABORATORIES LLC
- Sameh G. Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND ME...
- Publication number 20130328061
- Publication date Dec 12, 2013
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SIDEWALL GATE GaN HEMT
- Publication number 20130119400
- Publication date May 16, 2013
- HRL Laboratories
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALGaN/GaN HYBRID MOS-HFET
- Publication number 20130001646
- Publication date Jan 3, 2013
- HRL LABORATORIES, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS

Andrea Corrion

Person

Patents Grantslast 30 patents

Monolithic integration of group III nitride epitaxial layers

Vertical III-nitride semiconductor device with a vertically formed...

Monolithic integration of group III nitride epitaxial layers

Stepped field plate wide bandgap field-effect transistor and method

Near junction cooling for GaN devices

Vertical III-nitride semiconductor device with a vertically formed...

Etch-based fabrication process for stepped field-plate wide-bandgap

Monolithic integration of group III nitride epitaxial layers

Apparatus and method for reducing the interface resistance in GaN H...

Etch-based fabrication process for stepped field-plate wide-bandgap

Stepped field plate wide bandgap field-effect transistor and method

Method of fabricating slanted field-plate GaN heterojunction field-...

Monolithic integration of group III nitride epitaxial layers

Self-aligned sidewall gate GaN HEMT

Enhancement and depletion mode GaN HMETs on the same substrate

Gate metallization methods for self-aligned sidewall gate GaN HEMT

Apparatus and method for reducing the interface resistance in GaN h...

AlGaN/GaN hybrid MOS-HFET

Gate metallization methods for self-aligned sidewall gate GaN HEMT

Monolithic integration of group III nitride enhancement layers

Self aligned sidewall gate GaN HEMT

Patents Applicationslast 30 patents

SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR

SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR

VERTICAL III-NITRIDE SEMICONDUCTOR DEVICE WITH A VERTICALLY FORMED...

VERTICAL III-NITRIDE SEMICONDUCTOR DEVICE WITH A VERTICALLY FORMED...

NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND ME...

SELF-ALIGNED SIDEWALL GATE GaN HEMT

ALGaN/GaN HYBRID MOS-HFET