Andreas Gehring

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming silicon/germanium containing drain/source region...
- Patent number 8,652,913
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 8,530,894
- Issue date Sep 10, 2013
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device having a substrate diode with process tolerant configura...
- Patent number 8,377,761
- Issue date Feb 19, 2013
- Advanced Micro Devices, Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for differential spacer removal by wet chemical etch process...
- Patent number 8,298,924
- Issue date Oct 30, 2012
- Advanced Micro Devices, Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 8,227,266
- Issue date Jul 24, 2012
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing transistor junction capacitance by recessing drain and sou...
- Patent number 8,183,605
- Issue date May 22, 2012
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating tensile strain by applying stress memorization...
- Patent number 8,129,236
- Issue date Mar 6, 2012
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ formed drain and source regions in a silicon/germanium cont...
- Patent number 8,093,634
- Issue date Jan 10, 2012
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device having a substrate diode with process tolerant configura...
- Patent number 7,943,442
- Issue date May 17, 2011
- Advanced Micro Devices, Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a strained semiconductor alloy concentr...
- Patent number 7,939,399
- Issue date May 10, 2011
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating tensile strain by selectively applying stress m...
- Patent number 7,897,451
- Issue date Mar 1, 2011
- GLOBALFOUNDRIES Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising an implantat...
- Patent number 7,816,199
- Issue date Oct 19, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating tensile strain by repeatedly applied stress mem...
- Patent number 7,790,537
- Issue date Sep 7, 2010
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising a field effe...
- Patent number 7,772,077
- Issue date Aug 10, 2010
- Advanced Micro Devices, Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing crystal defects in transistors with re-grown sh...
- Patent number 7,763,505
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a channel with biaxial strain induced by silicon/...
- Patent number 7,754,555
- Issue date Jul 13, 2010
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing transistor junction capacitance by recessing drain and sou...
- Patent number 7,754,556
- Issue date Jul 13, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 7,713,763
- Issue date May 11, 2010
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20120223309
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEVICE HAVING A SUBSTRATE DIODE WITH PROCESS TOLERANT CONFIGURA...
- Publication number 20110183477
- Publication date Jul 28, 2011
- Advanced Micro Devices, Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...
- Publication number 20100237431
- Publication date Sep 23, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20100155727
- Publication date Jun 24, 2010
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU FORMED DRAIN AND SOURCE REGIONS IN A SILICON/GERMANIUM CONT...
- Publication number 20090294860
- Publication date Dec 3, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING TENSILE STRAIN BY APPLYING STRESS MEMORIZATION...
- Publication number 20090246926
- Publication date Oct 1, 2009
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20090166618
- Publication date Jul 2, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING TENSILE STRAIN BY SELECTIVELY APPLYING STRESS M...
- Publication number 20090142900
- Publication date Jun 4, 2009
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING ETCH SELECTIVITY DURING THE PATTERNING OF A CONTACT STRU...
- Publication number 20090108415
- Publication date Apr 30, 2009
- Markus LENSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...
- Publication number 20090035924
- Publication date Feb 5, 2009
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...
- Publication number 20090001484
- Publication date Jan 1, 2009
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEVICE HAVING A SUBSTRATE DIODE WITH PROCESS TOLERANT CONFIGURA...
- Publication number 20080268585
- Publication date Oct 30, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING TENSILE STRAIN BY REPEATEDLY APPLIED STRESS MEM...
- Publication number 20080237723
- Publication date Oct 2, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DIFFERENTIAL SPACER REMOVAL BY WET CHEMICAL ETCH PROCESS...
- Publication number 20080203486
- Publication date Aug 28, 2008
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A STRAINED SEMICONDUCTOR ALLOY CONCENTR...
- Publication number 20080203427
- Publication date Aug 28, 2008
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGION...
- Publication number 20080182371
- Publication date Jul 31, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFE...
- Publication number 20080102590
- Publication date May 1, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING CRYSTAL DEFECTS IN TRANSISTORS WITH RE-GROWN SH...
- Publication number 20080081403
- Publication date Apr 3, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A CHANNEL WITH BIAXIAL STRAIN INDUCED BY SILICON/...
- Publication number 20080001178
- Publication date Jan 3, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS

Andreas Gehring

Person

Patents Grantslast 30 patents

Method for forming silicon/germanium containing drain/source region...

Test structure for monitoring process characteristics for forming e...

SOI device having a substrate diode with process tolerant configura...

Method for differential spacer removal by wet chemical etch process...

Test structure for monitoring process characteristics for forming e...

Reducing transistor junction capacitance by recessing drain and sou...

Method for creating tensile strain by applying stress memorization...

In situ formed drain and source regions in a silicon/germanium cont...

SOI device having a substrate diode with process tolerant configura...

Semiconductor device having a strained semiconductor alloy concentr...

Method for creating tensile strain by selectively applying stress m...

Method of forming a semiconductor structure comprising an implantat...

Method for creating tensile strain by repeatedly applied stress mem...

Method of forming a semiconductor structure comprising a field effe...

Method for reducing crystal defects in transistors with re-grown sh...

Transistor having a channel with biaxial strain induced by silicon/...

Reducing transistor junction capacitance by recessing drain and sou...

Test structure for monitoring process characteristics for forming e...

Patents Applicationslast 30 patents

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

SOI DEVICE HAVING A SUBSTRATE DIODE WITH PROCESS TOLERANT CONFIGURA...

REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

IN SITU FORMED DRAIN AND SOURCE REGIONS IN A SILICON/GERMANIUM CONT...

METHOD FOR CREATING TENSILE STRAIN BY APPLYING STRESS MEMORIZATION...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

METHOD FOR CREATING TENSILE STRAIN BY SELECTIVELY APPLYING STRESS M...

INCREASING ETCH SELECTIVITY DURING THE PATTERNING OF A CONTACT STRU...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...

REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...

SOI DEVICE HAVING A SUBSTRATE DIODE WITH PROCESS TOLERANT CONFIGURA...

METHOD FOR CREATING TENSILE STRAIN BY REPEATEDLY APPLIED STRESS MEM...

METHOD FOR DIFFERENTIAL SPACER REMOVAL BY WET CHEMICAL ETCH PROCESS...

SEMICONDUCTOR DEVICE HAVING A STRAINED SEMICONDUCTOR ALLOY CONCENTR...

METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGION...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFE...

METHOD FOR REDUCING CRYSTAL DEFECTS IN TRANSISTORS WITH RE-GROWN SH...

TRANSISTOR HAVING A CHANNEL WITH BIAXIAL STRAIN INDUCED BY SILICON/...