Andreas Haghofer

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with cell trench structures and recessed conta...
- Patent number 10,629,676
- Issue date Apr 21, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of conditioning an etch chamber for contaminant free etching...
- Patent number 10,128,133
- Issue date Nov 13, 2018
- Infineon Technologies Austria AG
- Andreas Haghofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench using epitaxial lateral overgrowth
- Patent number 9,768,273
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cell trench structures and contacts and m...
- Patent number 9,666,663
- Issue date May 30, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench using epitaxial lateral overgrowth and d...
- Patent number 9,379,196
- Issue date Jun 28, 2016
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Stripe-Shaped Cell Trench Structures and...
- Publication number 20200227518
- Publication date Jul 16, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Cell Trench Structures and Recessed Conta...
- Publication number 20180366541
- Publication date Dec 20, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Cell Trench Structures and Contacts and M...
- Publication number 20170243969
- Publication date Aug 24, 2017
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Method for Forming Semiconductor Devices
- Publication number 20170005091
- Publication date Jan 5, 2017
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Trench Using Epitaxial Lateral Overgrowth
- Publication number 20160308028
- Publication date Oct 20, 2016
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Trench Using Epitaxial Lateral Overgrowth and D...
- Publication number 20150221735
- Publication date Aug 6, 2015
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Cell Trench Structures and Contacts and M...
- Publication number 20150041962
- Publication date Feb 12, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Andreas Haghofer

Person

Patents Grantslast 30 patents

Semiconductor device with cell trench structures and recessed conta...

Method of conditioning an etch chamber for contaminant free etching...

Method of forming a trench using epitaxial lateral overgrowth

Semiconductor device with cell trench structures and contacts and m...

Method of forming a trench using epitaxial lateral overgrowth and d...

Patents Applicationslast 30 patents

Semiconductor Device with Stripe-Shaped Cell Trench Structures and...

Semiconductor Device with Cell Trench Structures and Recessed Conta...

Semiconductor Device with Cell Trench Structures and Contacts and M...

Semiconductor Devices and Method for Forming Semiconductor Devices

Method of Forming a Trench Using Epitaxial Lateral Overgrowth

Method of Forming a Trench Using Epitaxial Lateral Overgrowth and D...

Semiconductor Device with Cell Trench Structures and Contacts and M...