Andreas MEISER

Person

Sauerlach, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 12,300,724
- Issue date May 13, 2025
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor device
- Patent number 11,705,506
- Issue date Jul 18, 2023
- Infineon Technologies Dresden GmbH & Co. KG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body
- Patent number 11,600,701
- Issue date Mar 7, 2023
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor arrangement and method of producing thereof
- Patent number 11,245,002
- Issue date Feb 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with electrical resistor
- Patent number 11,217,658
- Issue date Jan 4, 2022
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device with...
- Patent number 11,195,946
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 11,177,354
- Issue date Nov 16, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor component
- Patent number 11,145,745
- Issue date Oct 12, 2021
- Infineon Technologies AG
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structures and manufacturing...
- Patent number 11,121,220
- Issue date Sep 14, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a gradually increasing field dielec...
- Patent number 11,069,782
- Issue date Jul 20, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a gate electrode formed...
- Patent number 11,031,494
- Issue date Jun 8, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxygen inserted Si-layers in power semiconductor...
- Patent number 11,031,466
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor device
- Patent number 11,018,244
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body and method...
- Patent number 11,011,606
- Issue date May 18, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with planar field effect transistor cell
- Patent number 10,985,245
- Issue date Apr 20, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power semiconductor device with integrated Schottky junction
- Patent number 10,985,248
- Issue date Apr 20, 2021
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with trench gate structure and...
- Patent number 10,964,808
- Issue date Mar 30, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming complementary doped semiconductor regions in a s...
- Patent number 10,903,079
- Issue date Jan 26, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power semiconductor device with integrated body diode
- Patent number 10,903,322
- Issue date Jan 26, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device having a superjunction...
- Patent number 10,868,146
- Issue date Dec 15, 2020
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices with oxygen inserted Si-layers
- Patent number 10,868,172
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and circuit for detecting a loss of a bondwire in a power sw...
- Patent number 10,845,428
- Issue date Nov 24, 2020
- Infineon Technologies AG
- Andreas Meiser
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device with superjunction and oxygen inserted Si-layers
- Patent number 10,790,353
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...
- Patent number 10,741,638
- Issue date Aug 11, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with trench gate structure and...
- Patent number 10,734,484
- Issue date Aug 4, 2020
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a first transistor and a second tra...
- Patent number 10,700,061
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Andreas Meiser
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device comprising a transistor including a first fiel...
- Patent number 10,629,690
- Issue date Apr 21, 2020
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing
- Patent number 10,586,851
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR HAVING A TRENCH GATE STRUCTURE
- Publication number 20250120117
- Publication date Apr 10, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Andreas Meiser
Information Patent Application
Semiconductor Die with a Vertical Power Transistor Device
- Publication number 20240243130
- Publication date Jul 18, 2024
- Infineon Technologies Austria AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having A SiC Semiconductor Body
- Publication number 20230148156
- Publication date May 11, 2023
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Contact Trenches Extending from Opposit...
- Publication number 20220285550
- Publication date Sep 8, 2022
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Silicon Carbide Semiconductor Devices
- Publication number 20220028980
- Publication date Jan 27, 2022
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRENCH TRANSISTOR DEVICE
- Publication number 20210234023
- Publication date Jul 29, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY
- Publication number 20210226015
- Publication date Jul 22, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE WITH...
- Publication number 20210167203
- Publication date Jun 3, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit and Bipolar Transistor
- Publication number 20210050434
- Publication date Feb 18, 2021
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Device with Oxygen Inserted Si-Layers
- Publication number 20200350401
- Publication date Nov 5, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...
- Publication number 20200303498
- Publication date Sep 24, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trench Structures and Manufacturing...
- Publication number 20200176568
- Publication date Jun 4, 2020
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Power Semiconductor Device with Integrated Schottky Junction
- Publication number 20200161433
- Publication date May 21, 2020
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Power Semiconductor Device with Integrated Body Diode
- Publication number 20200161437
- Publication date May 21, 2020
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers
- Publication number 20200152733
- Publication date May 14, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Silicon Carbide Semiconductor Devices
- Publication number 20200152743
- Publication date May 14, 2020
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Trench Transistor Device
- Publication number 20200127121
- Publication date Apr 23, 2020
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127134
- Publication date Apr 23, 2020
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having a SiC Semiconductor Body and Method...
- Publication number 20200111874
- Publication date Apr 9, 2020
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...
- Publication number 20200052109
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...
- Publication number 20200052066
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...
- Publication number 20200044036
- Publication date Feb 6, 2020
- INFINEON TECHNOLOGIES AG
- Andreas MEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Component
- Publication number 20200027969
- Publication date Jan 23, 2020
- INFINEON TECHNOLOGIES AG
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Circuit for Detecting a Loss of a Bondwire in a Power Sw...
- Publication number 20190369151
- Publication date Dec 5, 2019
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- G01 - MEASURING TESTING
Information Patent Application
Semiconductor Device with Electrical Resistor
- Publication number 20190371882
- Publication date Dec 5, 2019
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Device
- Publication number 20190348525
- Publication date Nov 14, 2019
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Trench Structure and Production Method
- Publication number 20190312114
- Publication date Oct 10, 2019
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device with Trench Gate Structure and...
- Publication number 20190296110
- Publication date Sep 26, 2019
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Complementary Doped Semiconductor Regions in a S...
- Publication number 20190287804
- Publication date Sep 19, 2019
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device Having a Gate Electrode Formed...
- Publication number 20190259870
- Publication date Aug 22, 2019
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS

Andreas MEISER

Person

Patents Grantslast 30 patents

Method of manufacturing silicon carbide semiconductor devices

Semiconductor device having contact trenches extending from opposit...

Lateral trench transistor device

Semiconductor component having a SiC semiconductor body

Superjunction device with oxygen inserted Si-layers

Superjunction transistor arrangement and method of producing thereof

Semiconductor device with electrical resistor

Method of manufacturing a silicon carbide semiconductor device with...

Method of manufacturing silicon carbide semiconductor devices

Method for producing a semiconductor component

Semiconductor device including trench structures and manufacturing...

Semiconductor device comprising a gradually increasing field dielec...

Silicon carbide semiconductor device having a gate electrode formed...

Method of forming oxygen inserted Si-layers in power semiconductor...

Lateral trench transistor device

Semiconductor component having a SiC semiconductor body and method...

Semiconductor device with planar field effect transistor cell

SiC power semiconductor device with integrated Schottky junction

Silicon carbide semiconductor device with trench gate structure and...

Method for forming complementary doped semiconductor regions in a s...

SiC power semiconductor device with integrated body diode

Method for producing a semiconductor device having a superjunction...

Vertical power devices with oxygen inserted Si-layers

Method and circuit for detecting a loss of a bondwire in a power sw...

Semiconductor device with superjunction and oxygen inserted Si-layers

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...

Silicon carbide semiconductor device with trench gate structure and...

Semiconductor device comprising a first transistor and a second tra...

Semiconductor device comprising a transistor including a first fiel...

Silicon carbide semiconductor device and method of manufacturing

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR HAVING A TRENCH GATE STRUCTURE

Semiconductor Die with a Vertical Power Transistor Device

Semiconductor Component Having A SiC Semiconductor Body

Semiconductor Device Having Contact Trenches Extending from Opposit...

Method of Manufacturing Silicon Carbide Semiconductor Devices

LATERAL TRENCH TRANSISTOR DEVICE

SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY

METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE WITH...

Integrated Circuit and Bipolar Transistor

Superjunction Device with Oxygen Inserted Si-Layers

Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...

Semiconductor Device Including Trench Structures and Manufacturing...

SiC Power Semiconductor Device with Integrated Schottky Junction

SiC Power Semiconductor Device with Integrated Body Diode

Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers

Method of Manufacturing Silicon Carbide Semiconductor Devices

Lateral Trench Transistor Device

Vertical Power Devices with Oxygen Inserted Si-Layers

Semiconductor Component Having a SiC Semiconductor Body and Method...

OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...

Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...

SEMICONDUCTOR DEVICE COMPRISING A GRADUALLY INCREASING FIELD DIELEC...

Method for Producing a Semiconductor Component

Method and Circuit for Detecting a Loss of a Bondwire in a Power Sw...

Semiconductor Device with Electrical Resistor

Method for Producing a Semiconductor Device

Semiconductor Device with Trench Structure and Production Method

Silicon Carbide Semiconductor Device with Trench Gate Structure and...

Method for Forming Complementary Doped Semiconductor Regions in a S...

Silicon Carbide Semiconductor Device Having a Gate Electrode Formed...