Andreas Scholze

Person

Colchester, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Contact-first field-effect transistors
- Patent number 11,101,367
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Terence B. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge and passive structures integrated in a vert...
- Patent number 10,297,589
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epitaxial buffer layer for finFET source and drai...
- Patent number 10,249,714
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epitaxial buffer layer for finFET source and drai...
- Patent number 9,793,272
- Issue date Oct 17, 2017
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epitaxial buffer layer for finFET source and drai...
- Patent number 9,786,661
- Issue date Oct 10, 2017
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET having notched fins and method of forming same
- Patent number 9,786,765
- Issue date Oct 10, 2017
- GLOBALFOUNDRIES Inc.
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge and passive structures integrated in a vert...
- Patent number 9,704,852
- Issue date Jul 11, 2017
- GLOBALFOUNDRIES Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subsurface wires of integrated chip and methods of forming
- Patent number 9,601,513
- Issue date Mar 21, 2017
- GLOBALFOUNDRIES Inc.
- Terence B. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-isolated bulk FinFET
- Patent number 9,536,882
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epitaxial buffer layer for finFET source and drai...
- Patent number 9,390,976
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge and passive structures integrated in a vert...
- Patent number 9,391,065
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried oxidation for enhanced mobility
- Patent number 8,647,935
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT-FIRST FIELD-EFFECT TRANSISTORS
- Publication number 20200066871
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Terence P. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAI...
- Publication number 20170294510
- Publication date Oct 12, 2017
- International Business Machines Corporation
- DECHAO GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING NOTCHED FINS AND METHOD OF FORMING SAME
- Publication number 20170236917
- Publication date Aug 17, 2017
- GLOBALFOUNDRIES INC.
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE AND PASSIVE STRUCTURES INTEGRATED IN A VERT...
- Publication number 20170229443
- Publication date Aug 10, 2017
- GLOBALFOUNDRIES INC.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE AND PASSIVE STRUCTURES INTEGRATED IN A VERI...
- Publication number 20160379972
- Publication date Dec 29, 2016
- GLOBALFOUNDRIES INC.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT-FIRST FIELD-EFFECT TRANSISTORS
- Publication number 20160372600
- Publication date Dec 22, 2016
- International Business Machines Corporation
- Terence B. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAI...
- Publication number 20160284701
- Publication date Sep 29, 2016
- International Business Machines Corporation
- DECHAO GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAI...
- Publication number 20160276463
- Publication date Sep 22, 2016
- International Business Machines Corporation
- DECHAO GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-ISOLATED BULK FINFET
- Publication number 20160181247
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAIN JUNCTION LEAKAGE...
- Publication number 20150318211
- Publication date Nov 5, 2015
- International Business Machines Corporation
- DECHAO GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED OXIDATION FOR ENHANCED MOBILITY
- Publication number 20120153353
- Publication date Jun 21, 2012
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Andreas Scholze

Person

Patents Grantslast 30 patents

Contact-first field-effect transistors

Electrostatic discharge and passive structures integrated in a vert...

Method of forming epitaxial buffer layer for finFET source and drai...

Method of forming epitaxial buffer layer for finFET source and drai...

Method of forming epitaxial buffer layer for finFET source and drai...

FINFET having notched fins and method of forming same

Electrostatic discharge and passive structures integrated in a vert...

Subsurface wires of integrated chip and methods of forming

Field-isolated bulk FinFET

Method of forming epitaxial buffer layer for finFET source and drai...

Electrostatic discharge and passive structures integrated in a vert...

Buried oxidation for enhanced mobility

Patents Applicationslast 30 patents

CONTACT-FIRST FIELD-EFFECT TRANSISTORS

METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAI...

FINFET HAVING NOTCHED FINS AND METHOD OF FORMING SAME

ELECTROSTATIC DISCHARGE AND PASSIVE STRUCTURES INTEGRATED IN A VERT...

ELECTROSTATIC DISCHARGE AND PASSIVE STRUCTURES INTEGRATED IN A VERI...

CONTACT-FIRST FIELD-EFFECT TRANSISTORS

METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAI...

METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAI...

FIELD-ISOLATED BULK FINFET

EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAIN JUNCTION LEAKAGE...

BURIED OXIDATION FOR ENHANCED MOBILITY