Andreas Wohlfart

Person

Baiersdorf, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Monocrystalline SiC substrate with a non-homogeneous lattice plane...
- Patent number 9,590,046
- Issue date Mar 7, 2017
- SiCrystal Aktiengesellschaft
- Thomas Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Physical vapor transport growth system for simultaneously growing m...
- Patent number 9,376,764
- Issue date Jun 28, 2016
- SiCrystal AG
- Thomas Ludwig Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for a bulk SiC single crystal with a large facet...
- Patent number 8,865,324
- Issue date Oct 21, 2014
- SiCrystal AG
- Thomas Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for an SiC volume monocrystal with a non-homogene...
- Patent number 8,758,510
- Issue date Jun 24, 2014
- SiCrystal Aktiengesellschaft
- Thomas Straubinger
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for an SiC volume monocrystal with a homogeneous...
- Patent number 8,747,982
- Issue date Jun 10, 2014
- SiCrystal Aktiengesellschaft
- Thomas Straubinger
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE...
- Publication number 20140225127
- Publication date Aug 14, 2014
- SICRYSTAL AKTIENGESELLSCHAFT
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
Physical Vapor Transport Growth System For Simultaneously Growing M...
- Publication number 20130305983
- Publication date Nov 21, 2013
- SICRYSTAL AG
- Thomas Ludwig Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS...
- Publication number 20130171402
- Publication date Jul 4, 2013
- SiCRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENE...
- Publication number 20130171403
- Publication date Jul 4, 2013
- SiCRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET...
- Publication number 20110300323
- Publication date Dec 8, 2011
- SICRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THER...
- Publication number 20110086213
- Publication date Apr 14, 2011
- SICRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Method for a Codoped Bulk SiC Crystal and High-Impedance...
- Publication number 20100159182
- Publication date Jun 24, 2010
- SICRYSTAL AG
- Thomas Straubinger
- C30 - CRYSTAL GROWTH

Andreas Wohlfart

Person

Patents Grantslast 30 patents

Monocrystalline SiC substrate with a non-homogeneous lattice plane...

Physical vapor transport growth system for simultaneously growing m...

Production method for a bulk SiC single crystal with a large facet...

Production method for an SiC volume monocrystal with a non-homogene...

Production method for an SiC volume monocrystal with a homogeneous...

Patents Applicationslast 30 patents

MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE...

Physical Vapor Transport Growth System For Simultaneously Growing M...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENE...

PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET...

METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THER...

Production Method for a Codoped Bulk SiC Crystal and High-Impedance...