Andrei Konstantinov

Person

Linkoping, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Carbon-controlled ohmic contact layer for backside ohmic contact on...
- Patent number 10,629,686
- Issue date Apr 21, 2020
- Semiconductor Components Industries, LLC
- Thi Thu Phuong Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche-rugged silicon carbide (SiC) power device
- Patent number 10,504,989
- Issue date Dec 10, 2019
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide trench gate MOSFETs and methods of manufacture
- Patent number 10,355,123
- Issue date Jul 16, 2019
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche-rugged silicon carbide (SiC) power device
- Patent number 10,026,805
- Issue date Jul 17, 2018
- Farichild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide trench gate MOSFETs
- Patent number 9,893,176
- Issue date Feb 13, 2018
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche-rugged silicon carbide (SiC) power Schottky rectifier
- Patent number 9,741,873
- Issue date Aug 22, 2017
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky-barrier device and related semiconductor product
- Patent number 9,608,056
- Issue date Mar 28, 2017
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power bipolar devices with deep acceptor doping
- Patent number 9,577,045
- Issue date Feb 21, 2017
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide bipolar junction transistor including shielding reg...
- Patent number 9,515,176
- Issue date Dec 6, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide trench gate MOSFETs
- Patent number 9,466,709
- Issue date Oct 11, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power device having a high voltage termination
- Patent number 9,461,108
- Issue date Oct 4, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration of portions of a power device within a silicon carbid...
- Patent number 9,425,262
- Issue date Aug 23, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky-barrier device with locally planarized surface and related...
- Patent number 9,105,557
- Issue date Aug 11, 2015
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with spacer layer
- Patent number 9,099,517
- Issue date Aug 4, 2015
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching circuit and controller circuit
- Patent number 8,994,442
- Issue date Mar 31, 2015
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Grid-UMOSFET with electric field shielding of gate oxide
- Patent number 8,946,726
- Issue date Feb 3, 2015
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a SiC bipolar junction transistor and SiC b...
- Patent number 8,823,410
- Issue date Sep 2, 2014
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC bipolar junction transistor with overgrown emitter
- Patent number 8,785,945
- Issue date Jul 22, 2014
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a SiC bipolar junction transistor and SiC b...
- Patent number 8,704,546
- Issue date Apr 22, 2014
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Grid-UMOSFET with electric field shielding of gate oxide
- Patent number 8,421,148
- Issue date Apr 16, 2013
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short gate high power MOSFET and method of manufacture
- Patent number 8,084,813
- Issue date Dec 27, 2011
- Cree, Inc.
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide self-aligned epitaxial MOSF...
- Patent number 7,994,017
- Issue date Aug 9, 2011
- Cree, Inc.
- Christopher Harris
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lateral field effect transistor and its fabrication comprising a sp...
- Patent number 7,834,396
- Issue date Nov 16, 2010
- Cree Sweden AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device of field effect transistor including a base short...
- Patent number 7,646,060
- Issue date Jan 12, 2010
- Cree Sweden AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide self-aligned epitaxial MOSFET for high powered devi...
- Patent number 7,629,616
- Issue date Dec 8, 2009
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical junction field effect transistor having an epitaxial gate
- Patent number 7,355,223
- Issue date Apr 8, 2008
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical junction field effect transistor...
- Patent number 7,279,368
- Issue date Oct 9, 2007
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device of SiC
- Patent number 6,306,773
- Issue date Oct 23, 2001
- Christian Adås
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Field effect transistor of SiC for high temperature application, us...
- Patent number 6,278,133
- Issue date Aug 21, 2001
- Acreo AB
- Christopher Harris
- G01 - MEASURING TESTING
Information Patent Grant
High power impatt diode
- Patent number 6,252,250
- Issue date Jun 26, 2001
- Acreo AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CARBON-CONTROLLED OHMIC CONTACT LAYER FOR BACKSIDE OHMIC CONTACT ON...
- Publication number 20200044031
- Publication date Feb 6, 2020
- Semiconductor Components Industries, LLC
- Thi Thu Phuong PHAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER DEVICE
- Publication number 20180342576
- Publication date Nov 29, 2018
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE TRENCH GATE MOSFETS AND METHODS OF MANUFACTURE
- Publication number 20180145168
- Publication date May 24, 2018
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER DEVICE
- Publication number 20170345889
- Publication date Nov 30, 2017
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE TRENCH GATE MOSFETS
- Publication number 20170012119
- Publication date Jan 12, 2017
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER SCHOTTKY RECTIFIER
- Publication number 20160284871
- Publication date Sep 29, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE TRENCH GATE MOSFETS
- Publication number 20160190308
- Publication date Jun 30, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC POWER DEVICE HAVING A HIGH VOLTAGE TERMINATION
- Publication number 20160049465
- Publication date Feb 18, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER BIPOLAR DEVICES WITH DEEP ACCEPTOR DOPING
- Publication number 20160035836
- Publication date Feb 4, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURATION OF PORTIONS OF A POWER DEVICE WITHIN A SILICON CARBID...
- Publication number 20150349062
- Publication date Dec 3, 2015
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY-BARRIER DEVICE AND RELATED SEMICONDUCTOR PRODUCT
- Publication number 20150295023
- Publication date Oct 15, 2015
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH SPACER LAYER
- Publication number 20140034968
- Publication date Feb 6, 2014
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY-BARRIER DEVICE WITH LOCALLY PLANARIZED SURFACE AND RELATED...
- Publication number 20140001490
- Publication date Jan 2, 2014
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING CIRCUIT AND CONTROLLER CIRCUIT
- Publication number 20130342262
- Publication date Dec 26, 2013
- Andrei Konstantinov
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR COMPRISING SHIELDING RE...
- Publication number 20130313571
- Publication date Nov 28, 2013
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
- Publication number 20130270577
- Publication date Oct 17, 2013
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC B...
- Publication number 20130087809
- Publication date Apr 11, 2013
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN EMITTER
- Publication number 20130087808
- Publication date Apr 11, 2013
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC B...
- Publication number 20120105094
- Publication date May 3, 2012
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSF...
- Publication number 20100041195
- Publication date Feb 18, 2010
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS
- Publication number 20090224354
- Publication date Sep 10, 2009
- Cree, Inc.
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE
- Publication number 20090140326
- Publication date Jun 4, 2009
- Cree, Inc.
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
- Publication number 20090072241
- Publication date Mar 19, 2009
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide self-aligned epitaxial MOSFET and method of manufac...
- Publication number 20080203398
- Publication date Aug 28, 2008
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Field Effect Transistor and Its Fabrication Comprising a Sp...
- Publication number 20070262321
- Publication date Nov 15, 2007
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and device
- Publication number 20060252212
- Publication date Nov 9, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical junction field effect transistor having an epitaxial gate
- Publication number 20060220072
- Publication date Oct 5, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a vertical junction field effect transistor...
- Publication number 20060199312
- Publication date Sep 7, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS

Andrei Konstantinov

Person

Patents Grantslast 30 patents

Carbon-controlled ohmic contact layer for backside ohmic contact on...

Avalanche-rugged silicon carbide (SiC) power device

Silicon-carbide trench gate MOSFETs and methods of manufacture

Avalanche-rugged silicon carbide (SiC) power device

Silicon-carbide trench gate MOSFETs

Avalanche-rugged silicon carbide (SiC) power Schottky rectifier

Schottky-barrier device and related semiconductor product

Silicon carbide power bipolar devices with deep acceptor doping

Silicon carbide bipolar junction transistor including shielding reg...

Silicon-carbide trench gate MOSFETs

SiC power device having a high voltage termination

Configuration of portions of a power device within a silicon carbid...

Schottky-barrier device with locally planarized surface and related...

Bipolar junction transistor with spacer layer

Switching circuit and controller circuit

Grid-UMOSFET with electric field shielding of gate oxide

Method of manufacturing a SiC bipolar junction transistor and SiC b...

SiC bipolar junction transistor with overgrown emitter

Method of manufacturing a SiC bipolar junction transistor and SiC b...

Grid-UMOSFET with electric field shielding of gate oxide

Short gate high power MOSFET and method of manufacture

Method of manufacturing silicon carbide self-aligned epitaxial MOSF...

Lateral field effect transistor and its fabrication comprising a sp...

Method and device of field effect transistor including a base short...

Silicon carbide self-aligned epitaxial MOSFET for high powered devi...

Vertical junction field effect transistor having an epitaxial gate

Method of manufacturing a vertical junction field effect transistor...

Method of producing a semiconductor device of SiC

Field effect transistor of SiC for high temperature application, us...

High power impatt diode

Patents Applicationslast 30 patents

CARBON-CONTROLLED OHMIC CONTACT LAYER FOR BACKSIDE OHMIC CONTACT ON...

AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER DEVICE

SILICON-CARBIDE TRENCH GATE MOSFETS AND METHODS OF MANUFACTURE

AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER DEVICE

SILICON-CARBIDE TRENCH GATE MOSFETS

AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER SCHOTTKY RECTIFIER

SILICON-CARBIDE TRENCH GATE MOSFETS

SIC POWER DEVICE HAVING A HIGH VOLTAGE TERMINATION

SILICON CARBIDE POWER BIPOLAR DEVICES WITH DEEP ACCEPTOR DOPING

CONFIGURATION OF PORTIONS OF A POWER DEVICE WITHIN A SILICON CARBID...

SCHOTTKY-BARRIER DEVICE AND RELATED SEMICONDUCTOR PRODUCT

BIPOLAR JUNCTION TRANSISTOR WITH SPACER LAYER

SCHOTTKY-BARRIER DEVICE WITH LOCALLY PLANARIZED SURFACE AND RELATED...

SWITCHING CIRCUIT AND CONTROLLER CIRCUIT

SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR COMPRISING SHIELDING RE...

GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE

METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC B...

SIC BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN EMITTER

METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC B...

METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSF...

JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS

SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE

GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE

Silicon carbide self-aligned epitaxial MOSFET and method of manufac...

Lateral Field Effect Transistor and Its Fabrication Comprising a Sp...

Method and device

Vertical junction field effect transistor having an epitaxial gate

Method of manufacturing a vertical junction field effect transistor...