Andrei Mihnea

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-level memory arrays with memory cells that employ bipolar sto...
- Patent number 9,105,576
- Issue date Aug 11, 2015
- Sandisk 3D LLC
- Yung-Tin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
3D stacked non-volatile storage programming to conductive state
- Patent number 9,099,202
- Issue date Aug 4, 2015
- SanDisk Technologies Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells having storage elements that share material layers wit...
- Patent number 8,981,331
- Issue date Mar 17, 2015
- Sandisk 3D LLC
- Yung-Tin Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and devices for memory cell erasure with a programming monit...
- Patent number 8,971,121
- Issue date Mar 3, 2015
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells having storage elements that share material layers wit...
- Patent number 8,969,845
- Issue date Mar 3, 2015
- Sandisk 3D LLC
- Yung-Tin Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Multi-level memory arrays with memory cells that employ bipolar sto...
- Patent number 8,841,648
- Issue date Sep 23, 2014
- Sandisk 3D LLC
- Yung-Tin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon/tunneling-barrier/carbon diode
- Patent number 8,624,293
- Issue date Jan 7, 2014
- Sandisk 3D LLC
- Abhijit Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch-through diode steering element
- Patent number 8,575,715
- Issue date Nov 5, 2013
- Sandisk 3D LLC
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Punch-through diode
- Patent number 8,557,654
- Issue date Oct 15, 2013
- Sandisk 3D LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell healing
- Patent number 8,542,542
- Issue date Sep 24, 2013
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory with low current operation
- Patent number 8,520,425
- Issue date Aug 27, 2013
- Sandisk 3D LLC
- Li Xiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for memory cell erasure with a programming monitor of refere...
- Patent number 8,514,629
- Issue date Aug 20, 2013
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Junctionless TFT NAND flash memory
- Patent number 8,395,942
- Issue date Mar 12, 2013
- SanDisk Technologies Inc.
- George Samachisa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells having storage elements that share material layers wit...
- Patent number 8,389,971
- Issue date Mar 5, 2013
- Sandisk 3D LLC
- Yung-Tin Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Transistor driven 3D memory
- Patent number 8,351,243
- Issue date Jan 8, 2013
- Sandisk 3D LLC
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Punch-through diode steering element
- Patent number 8,274,130
- Issue date Sep 25, 2012
- Sandisk 3D LLC
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for memory cell erasure with a programming monitor of refere...
- Patent number 8,264,885
- Issue date Sep 11, 2012
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell healing
- Patent number 8,238,170
- Issue date Aug 7, 2012
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase degradation reduction in non-volatile memory
- Patent number 8,139,421
- Issue date Mar 20, 2012
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming and erasing an NROM cell
- Patent number 7,986,555
- Issue date Jul 26, 2011
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Program-verify method
- Patent number 7,952,936
- Issue date May 31, 2011
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for memory cell erasure with a programming monitor of refere...
- Patent number 7,924,623
- Issue date Apr 12, 2011
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Limited charge delivery for programming non-volatile storage elements
- Patent number 7,885,091
- Issue date Feb 8, 2011
- Sandisk 3D LLC
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase degradation reduction in non-volatile memory
- Patent number 7,817,478
- Issue date Oct 19, 2010
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell healing
- Patent number 7,701,780
- Issue date Apr 20, 2010
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Contactless uniform-tunneling separate p-well (CUSP) non-volatile m...
- Patent number 7,696,557
- Issue date Apr 13, 2010
- Micron Technology, Inc.
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for programming and erasing an NROM cell
- Patent number 7,639,530
- Issue date Dec 29, 2009
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Program-verify method with different read and verify pass-through v...
- Patent number 7,619,931
- Issue date Nov 17, 2009
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device with improved erase operation
- Patent number 7,499,325
- Issue date Mar 3, 2009
- Intel Corporation
- Daniel H. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for neutralizing holes in tunnel oxides of floating-gate me...
- Patent number 7,280,395
- Issue date Oct 9, 2007
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...
- Publication number 20140346433
- Publication date Nov 27, 2014
- Yung-Tin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...
- Publication number 20140284538
- Publication date Sep 25, 2014
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D STACKED NON-VOLATILE STORAGE PROGRAMMING TO CONDUCTIVE STATE
- Publication number 20140126291
- Publication date May 8, 2014
- SANDISK TECHNOLOGIES INC.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MEMORY CELL ERASURE WITH A PROGRAMMING MONITOR OF REFERE...
- Publication number 20130343127
- Publication date Dec 26, 2013
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...
- Publication number 20130175492
- Publication date Jul 11, 2013
- SanDisk 3D LLC
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MEMORY CELL ERASURE WITH A PROGRAMMING MONITOR OF REFERE...
- Publication number 20120327712
- Publication date Dec 27, 2012
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
PUNCH-THROUGH DIODE STEERING ELEMENT
- Publication number 20120302029
- Publication date Nov 29, 2012
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL HEALING
- Publication number 20120300551
- Publication date Nov 29, 2012
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Random Access Memory With Low Current Operation
- Publication number 20120176831
- Publication date Jul 12, 2012
- Li Xiao
- G11 - INFORMATION STORAGE
Information Patent Application
PUNCH-THROUGH DIODE
- Publication number 20120145984
- Publication date Jun 14, 2012
- Peter Rabkin
- G11 - INFORMATION STORAGE
Information Patent Application
Transistor Driven 3D Memory
- Publication number 20120120709
- Publication date May 17, 2012
- SanDisk 3D LLC
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...
- Publication number 20120091419
- Publication date Apr 19, 2012
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...
- Publication number 20120091427
- Publication date Apr 19, 2012
- Yung-Tin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
JUNCTIONLESS TFT NAND FLASH MEMORY
- Publication number 20110280076
- Publication date Nov 17, 2011
- SANDISK CORPORATION
- George Samachisa
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MEMORY CELL ERASURE WITH A PROGRAMMING MONITOR OF REFERE...
- Publication number 20110188312
- Publication date Aug 4, 2011
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
CARBON/TUNNELING-BARRIER/CARBON DIODE
- Publication number 20110140064
- Publication date Jun 16, 2011
- Abhijit Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PUNCH-THROUGH DIODE STEERING ELEMENT
- Publication number 20110089391
- Publication date Apr 21, 2011
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE DEGRADATION REDUCTION IN NON-VOLATILE MEMORY
- Publication number 20110032768
- Publication date Feb 10, 2011
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
LIMITED CHARGE DELIVERY FOR PROGRAMMING NON-VOLATILE STORAGE ELEMENTS
- Publication number 20100302835
- Publication date Dec 2, 2010
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL HEALING
- Publication number 20100165747
- Publication date Jul 1, 2010
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING AND ERASING AN NROM CELL
- Publication number 20100067307
- Publication date Mar 18, 2010
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM-VERIFY METHOD
- Publication number 20100046303
- Publication date Feb 25, 2010
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL OPERATION
- Publication number 20090296471
- Publication date Dec 3, 2009
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE DEGRADATION REDUCTION IN NON-VOLATILE MEMORY
- Publication number 20090244979
- Publication date Oct 1, 2009
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
Program-verify method
- Publication number 20090003078
- Publication date Jan 1, 2009
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
Flash cell with improved program disturb
- Publication number 20090003065
- Publication date Jan 1, 2009
- Micron Technology, Inc.
- Andrei Mihnea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory cell healing
- Publication number 20080298123
- Publication date Dec 4, 2008
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY DEVICE WITH IMPROVED ERASE OPERATION
- Publication number 20080151646
- Publication date Jun 26, 2008
- Daniel H. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
Contactless uniform-tunneling separate p-well (cusp)non-volatile me...
- Publication number 20070164348
- Publication date Jul 19, 2007
- Micron Technology, Inc.
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for programming and erasing an NROM cell
- Publication number 20070070700
- Publication date Mar 29, 2007
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE

Andrei Mihnea

Person

Patents Grantslast 30 patents

Multi-level memory arrays with memory cells that employ bipolar sto...

3D stacked non-volatile storage programming to conductive state

Memory cells having storage elements that share material layers wit...

Method and devices for memory cell erasure with a programming monit...

Memory cells having storage elements that share material layers wit...

Multi-level memory arrays with memory cells that employ bipolar sto...

Carbon/tunneling-barrier/carbon diode

Punch-through diode steering element

Punch-through diode

Non-volatile memory cell healing

Resistive random access memory with low current operation

Method for memory cell erasure with a programming monitor of refere...

Junctionless TFT NAND flash memory

Memory cells having storage elements that share material layers wit...

Transistor driven 3D memory

Punch-through diode steering element

Method for memory cell erasure with a programming monitor of refere...

Non-volatile memory cell healing

Erase degradation reduction in non-volatile memory

Method for programming and erasing an NROM cell

Program-verify method

Method for memory cell erasure with a programming monitor of refere...

Limited charge delivery for programming non-volatile storage elements

Erase degradation reduction in non-volatile memory

Non-volatile memory cell healing

Contactless uniform-tunneling separate p-well (CUSP) non-volatile m...

Method for programming and erasing an NROM cell

Program-verify method with different read and verify pass-through v...

Flash memory device with improved erase operation

Methods for neutralizing holes in tunnel oxides of floating-gate me...

Patents Applicationslast 30 patents

MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...

MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...

3D STACKED NON-VOLATILE STORAGE PROGRAMMING TO CONDUCTIVE STATE

METHOD FOR MEMORY CELL ERASURE WITH A PROGRAMMING MONITOR OF REFERE...

MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...

METHOD FOR MEMORY CELL ERASURE WITH A PROGRAMMING MONITOR OF REFERE...

PUNCH-THROUGH DIODE STEERING ELEMENT

NON-VOLATILE MEMORY CELL HEALING

Resistive Random Access Memory With Low Current Operation

PUNCH-THROUGH DIODE

Transistor Driven 3D Memory

MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...

MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...

JUNCTIONLESS TFT NAND FLASH MEMORY

METHOD FOR MEMORY CELL ERASURE WITH A PROGRAMMING MONITOR OF REFERE...

CARBON/TUNNELING-BARRIER/CARBON DIODE

PUNCH-THROUGH DIODE STEERING ELEMENT

ERASE DEGRADATION REDUCTION IN NON-VOLATILE MEMORY

LIMITED CHARGE DELIVERY FOR PROGRAMMING NON-VOLATILE STORAGE ELEMENTS

NON-VOLATILE MEMORY CELL HEALING

METHOD FOR PROGRAMMING AND ERASING AN NROM CELL

PROGRAM-VERIFY METHOD

MEMORY CELL OPERATION

ERASE DEGRADATION REDUCTION IN NON-VOLATILE MEMORY

Program-verify method

Flash cell with improved program disturb

Non-volatile memory cell healing

FLASH MEMORY DEVICE WITH IMPROVED ERASE OPERATION

Contactless uniform-tunneling separate p-well (cusp)non-volatile me...

Method for programming and erasing an NROM cell