Andrew M. Waite

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device comprising metal gates and a silicon containin...
- Patent number 8,742,513
- Issue date Jun 3, 2014
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising metal gates and a silicon containin...
- Patent number 8,298,885
- Issue date Oct 30, 2012
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with asymmetrical extension implant
- Patent number 8,193,592
- Issue date Jun 5, 2012
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Strained MOS device and methods for its fabrication
- Patent number 8,159,030
- Issue date Apr 17, 2012
- GLOBALFOUNDRIES Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed field effect transistor and methods for its fabrication
- Patent number 8,148,214
- Issue date Apr 3, 2012
- GLOBALFOUNDRIES Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating stressed MOS devices
- Patent number 7,977,180
- Issue date Jul 12, 2011
- GLOBALFOUNDRIES, INC.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with asymmetrical extension implant
- Patent number 7,829,401
- Issue date Nov 9, 2010
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
CMOS device comprising MOS transistors with recessed drain and sour...
- Patent number 7,723,174
- Issue date May 25, 2010
- GLOBALFOUNDRIES Inc.
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for reducing miller capacitance in field effec...
- Patent number 7,659,172
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed field effect transistor and methods for its fabrication
- Patent number 7,504,301
- Issue date Mar 17, 2009
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making semiconductor device comp...
- Patent number 7,422,956
- Issue date Sep 9, 2008
- Advanced Micro Devices, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator semiconductor device with silicon layers havin...
- Patent number 7,235,433
- Issue date Jun 26, 2007
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel transistor with tunable hot carrier effect
- Patent number 7,224,007
- Issue date May 29, 2007
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and arrangement for reducing source/drain resistance with ep...
- Patent number 7,183,169
- Issue date Feb 27, 2007
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for offsetting a silicide process from a gate electrode of a...
- Patent number 7,179,745
- Issue date Feb 20, 2007
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing a cap from the gate of an embedded silicon germ...
- Patent number 7,157,374
- Issue date Jan 2, 2007
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method for its manufacture
- Patent number 6,972,478
- Issue date Dec 6, 2005
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAININ...
- Publication number 20130026581
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED MOS DEVICE AND METHODS FOR ITS FABRICATION
- Publication number 20120171820
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES INC.
- Andrew Michael WAITE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
- Publication number 20110024841
- Publication date Feb 3, 2011
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAININ...
- Publication number 20100289080
- Publication date Nov 18, 2010
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING STRESSED MOS DEVICES
- Publication number 20100144105
- Publication date Jun 10, 2010
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOUR...
- Publication number 20090321843
- Publication date Dec 31, 2009
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
- Publication number 20090283806
- Publication date Nov 19, 2009
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED FIELD EFFECT TRANSISTOR AND METHODS FOR ITS FABRICATION
- Publication number 20090130803
- Publication date May 21, 2009
- Advanced Micro Devices, Inc.
- Andrew M. WAITE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH-K GATE ELECTRODE STRUCTURES AFTER TRANSISTOR...
- Publication number 20090087974
- Publication date Apr 2, 2009
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED FIELD EFFECT TRANSISTOR AND METHODS FOR ITS FABRICATION
- Publication number 20080079033
- Publication date Apr 3, 2008
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED MOS DEVICE AND METHODS FOR ITS FABRICATION
- Publication number 20080012018
- Publication date Jan 17, 2008
- Advanced Micro Devices, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCING MILLER CAPACITANCE IN FIELD EFFEC...
- Publication number 20070117334
- Publication date May 24, 2007
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for manufacturing integrated circuits
- Publication number 20060272574
- Publication date Dec 7, 2006
- Advanced Micro Devices, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of making semiconductor device comp...
- Publication number 20060118918
- Publication date Jun 8, 2006
- Advanced Micro Devices, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-on-insulator semiconductor device with silicon layers havin...
- Publication number 20060091427
- Publication date May 4, 2006
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS

Andrew M. Waite

Person

Patents Grantslast 30 patents

Semiconductor device comprising metal gates and a silicon containin...

Semiconductor device comprising metal gates and a silicon containin...

MOSFET with asymmetrical extension implant

Strained MOS device and methods for its fabrication

Stressed field effect transistor and methods for its fabrication

Methods for fabricating stressed MOS devices

MOSFET with asymmetrical extension implant

CMOS device comprising MOS transistors with recessed drain and sour...

Structure and method for reducing miller capacitance in field effec...

Stressed field effect transistor and methods for its fabrication

Semiconductor device and method of making semiconductor device comp...

Silicon-on-insulator semiconductor device with silicon layers havin...

Multi-channel transistor with tunable hot carrier effect

Method and arrangement for reducing source/drain resistance with ep...

Method for offsetting a silicide process from a gate electrode of a...

Method for removing a cap from the gate of an embedded silicon germ...

Integrated circuit and method for its manufacture

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAININ...

STRAINED MOS DEVICE AND METHODS FOR ITS FABRICATION

MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT

SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAININ...

METHODS FOR FABRICATING STRESSED MOS DEVICES

CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOUR...

MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT

STRESSED FIELD EFFECT TRANSISTOR AND METHODS FOR ITS FABRICATION

METHOD OF FORMING HIGH-K GATE ELECTRODE STRUCTURES AFTER TRANSISTOR...

STRESSED FIELD EFFECT TRANSISTOR AND METHODS FOR ITS FABRICATION

STRAINED MOS DEVICE AND METHODS FOR ITS FABRICATION

STRUCTURE AND METHOD FOR REDUCING MILLER CAPACITANCE IN FIELD EFFEC...

Methods for manufacturing integrated circuits

Semiconductor device and method of making semiconductor device comp...

Silicon-on-insulator semiconductor device with silicon layers havin...