Andrey E. Nikolaev

Person

St. Petersburg, RU

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for epitaxially growing semiconductor device structures w...
- Patent number 7,670,435
- Issue date Mar 2, 2010
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus for epitaxially growing semiconductor device structures w...
- Patent number 6,706,119
- Issue date Mar 16, 2004
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of epitaxially growing device structures with submicron grou...
- Patent number 6,660,083
- Issue date Dec 9, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of epitaxially growing submicron group III nitride layers ut...
- Patent number 6,656,272
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of epitaxially growing device structures with sharp layer in...
- Patent number 6,573,164
- Issue date Jun 3, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for producing III-V nitride pn junctions and p-i-n junctions
- Patent number 6,218,269
- Issue date Apr 17, 2001
- Technology and Devices International, Inc.
- Andrey E. Nikolaev
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Method of epitaxially growing submicron group III nitride layers ut...
- Publication number 20020177312
- Publication date Nov 28, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for epitaxially for growing semiconductor device structur...
- Publication number 20020174833
- Publication date Nov 28, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for epitaxially growing semiconductor device structures w...
- Publication number 20020155713
- Publication date Oct 24, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of epitaxially growing device structures with sharp layer in...
- Publication number 20020155683
- Publication date Oct 24, 2002
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of epitaxially growing device structures with submicron grou...
- Publication number 20020152951
- Publication date Oct 24, 2002
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Andrey E. Nikolaev

Person

Patents Grantslast 30 patents

Apparatus for epitaxially growing semiconductor device structures w...

Apparatus for epitaxially growing semiconductor device structures w...

Method of epitaxially growing device structures with submicron grou...

Method of epitaxially growing submicron group III nitride layers ut...

Method of epitaxially growing device structures with sharp layer in...

Process for producing III-V nitride pn junctions and p-i-n junctions

Patents Applicationslast 30 patents

Method of epitaxially growing submicron group III nitride layers ut...

Apparatus for epitaxially for growing semiconductor device structur...

Apparatus for epitaxially growing semiconductor device structures w...

Method of epitaxially growing device structures with sharp layer in...

Method of epitaxially growing device structures with submicron grou...