Andy Wei

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Siloxane and organic-based MOL contact patterning
- Patent number 10,056,458
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Chang Ho Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a high-K gate dielectric above an STI r...
- Patent number 9,659,928
- Issue date May 23, 2017
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having drain and source regions of reduced length an...
- Patent number 9,450,073
- Issue date Sep 20, 2016
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded well implantation for asymmetric transistors having reduced...
- Patent number 9,449,826
- Issue date Sep 20, 2016
- Advanced Micro Devices, Inc.
- G Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate for robust ESD protection
- Patent number 9,343,456
- Issue date May 17, 2016
- GLOBALFOUNDRIES Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact bars with reduced fringing capacitance in a semiconductor d...
- Patent number 9,184,095
- Issue date Nov 10, 2015
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits
- Patent number 9,136,175
- Issue date Sep 15, 2015
- GLOBALFOUNDRIES, INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate approach for high-k metal gate stacks by avoiding...
- Patent number 9,034,744
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for self-aligned removal of a high-K gate dielectric above a...
- Patent number 9,023,712
- Issue date May 5, 2015
- Advanced Micro Devices, Inc.
- Andy Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device comprising a buried poly resistor
- Patent number 8,962,420
- Issue date Feb 24, 2015
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned contacts for a semiconductor device
- Patent number 8,927,407
- Issue date Jan 6, 2015
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow pn junction formed by in situ doping during selective growt...
- Patent number 8,906,811
- Issue date Dec 9, 2014
- Advanced Micro Devices, Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact elements
- Patent number 8,835,245
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising metal gates and a silicon containin...
- Patent number 8,742,513
- Issue date Jun 3, 2014
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits having gate to active a...
- Patent number 8,722,500
- Issue date May 13, 2014
- GLOBALFOUNDRIES, INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned fin transistor formed on a bulk substrate by late fin...
- Patent number 8,722,498
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate electrode structures formed by reducing a gate fi...
- Patent number 8,716,120
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced transistor performance of N-channel transistors by using a...
- Patent number 8,697,584
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned multiple gate transistor formed on a bulk substrate
- Patent number 8,679,924
- Issue date Mar 25, 2014
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a transistor with recessed drain and source area...
- Patent number 8,673,713
- Issue date Mar 18, 2014
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etch polysilicon removal for replacement gates
- Patent number 8,673,759
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Chris M. Prindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack formation for replacement gate technology
- Patent number 8,664,103
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate electrode structures formed by early cap layer ad...
- Patent number 8,664,057
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded strain-inducing material formed in diamond...
- Patent number 8,664,056
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor resistors formed at a lower height level in a semicon...
- Patent number 8,658,509
- Issue date Feb 25, 2014
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-transistor formed on a patterned STI region by late fin etch
- Patent number 8,652,889
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon/germanium containing drain/source region...
- Patent number 8,652,913
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encapsulation of closely spaced gate electrode structures
- Patent number 8,647,952
- Issue date Feb 11, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming efuse devices
- Patent number 8,609,485
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment in a Fin transistor by corner implanta...
- Patent number 8,580,643
- Issue date Nov 12, 2013
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING
- Publication number 20170200792
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Chang Ho MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FOR ROBUST ESD PROTECTION
- Publication number 20160071835
- Publication date Mar 10, 2016
- GLOBALFOUNDRIES INC.
- Amaury GENDRON-HANSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE
- Publication number 20150255353
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION
- Publication number 20150187765
- Publication date Jul 2, 2015
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS
- Publication number 20140154854
- Publication date Jun 5, 2014
- Globalfopundries, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY ETCH POLYSILICON REMOVAL FOR REPLACEMENT GATES
- Publication number 20130217221
- Publication date Aug 22, 2013
- GLOBALFOUNDRIES INC.
- Chris M. PRINDLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Self-Aligned Contacts for a Semiconductor Device
- Publication number 20130189833
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING GATE TO ACTIVE A...
- Publication number 20130071977
- Publication date Mar 21, 2013
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS
- Publication number 20130065371
- Publication date Mar 14, 2013
- GLOBALFOUNDRIES INC.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment in a Fin Transistor by Corner Implanta...
- Publication number 20130049121
- Publication date Feb 28, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER AD...
- Publication number 20130034942
- Publication date Feb 7, 2013
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAININ...
- Publication number 20130026581
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FI...
- Publication number 20120319205
- Publication date Dec 20, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Stack Formation for Replacement Gate Technology
- Publication number 20120315749
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL TRANSISTOR WITH REDUCED LENGTH VARIATION BY USING AMO...
- Publication number 20120280277
- Publication date Nov 8, 2012
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20120223309
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS
- Publication number 20120211837
- Publication date Aug 23, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TRANSISTOR FORMED ON A PATTERNED STI REGION BY LATE FIN ETCH
- Publication number 20120211808
- Publication date Aug 23, 2012
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...
- Publication number 20120211810
- Publication date Aug 23, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Metal Gate Electrode Structures Formed by a Replacement Gate...
- Publication number 20120196425
- Publication date Aug 2, 2012
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Fin Transistor Formed on a Bulk Substrate by Late Fin...
- Publication number 20120161238
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Encapsulation of Closely Spaced Gate Electrode Structures
- Publication number 20120153398
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...
- Publication number 20120032278
- Publication date Feb 9, 2012
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate
- Publication number 20110291196
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor With Embedded Strain-Inducing Material Formed in Diamond...
- Publication number 20110294269
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Metal Gates and Semiconductor Resis...
- Publication number 20110266633
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTU...
- Publication number 20110241124
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Metal Gate Structures Formed by a R...
- Publication number 20110241117
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Approach for High-K Metal Gate Stacks by Avoiding...
- Publication number 20110244670
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT BARS WITH REDUCED FRINGING CAPACITANCE IN A SEMICONDUCTOR D...
- Publication number 20110210380
- Publication date Sep 1, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Siloxane and organic-based MOL contact patterning

Semiconductor device having a high-K gate dielectric above an STI r...

SOI transistor having drain and source regions of reduced length an...

Graded well implantation for asymmetric transistors having reduced...

Metal gate for robust ESD protection

Contact bars with reduced fringing capacitance in a semiconductor d...

Methods for fabricating integrated circuits

Replacement gate approach for high-k metal gate stacks by avoiding...

Method for self-aligned removal of a high-K gate dielectric above a...

Semiconductor device comprising a buried poly resistor

Method of forming self-aligned contacts for a semiconductor device

Shallow pn junction formed by in situ doping during selective growt...

Semiconductor device comprising self-aligned contact elements

Semiconductor device comprising metal gates and a silicon containin...

Methods for fabricating integrated circuits having gate to active a...

Self-aligned fin transistor formed on a bulk substrate by late fin...

High-k metal gate electrode structures formed by reducing a gate fi...

Enhanced transistor performance of N-channel transistors by using a...

Self-aligned multiple gate transistor formed on a bulk substrate

Method for forming a transistor with recessed drain and source area...

Dry etch polysilicon removal for replacement gates

Metal gate stack formation for replacement gate technology

High-K metal gate electrode structures formed by early cap layer ad...

Transistor with embedded strain-inducing material formed in diamond...

Semiconductor resistors formed at a lower height level in a semicon...

Fin-transistor formed on a patterned STI region by late fin etch

Method for forming silicon/germanium containing drain/source region...

Encapsulation of closely spaced gate electrode structures

Methods of forming efuse devices

Threshold voltage adjustment in a Fin transistor by corner implanta...

Patents Applicationslast 30 patents

SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING

METAL GATE FOR ROBUST ESD PROTECTION

FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE

SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION

METHODS FOR FABRICATING INTEGRATED CIRCUITS

DRY ETCH POLYSILICON REMOVAL FOR REPLACEMENT GATES

Method of Forming Self-Aligned Contacts for a Semiconductor Device

METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING GATE TO ACTIVE A...

METHODS FOR FABRICATING INTEGRATED CIRCUITS

Threshold Voltage Adjustment in a Fin Transistor by Corner Implanta...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER AD...

SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAININ...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FI...

Metal Gate Stack Formation for Replacement Gate Technology

SHORT CHANNEL TRANSISTOR WITH REDUCED LENGTH VARIATION BY USING AMO...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS

FIN-TRANSISTOR FORMED ON A PATTERNED STI REGION BY LATE FIN ETCH

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...

High-K Metal Gate Electrode Structures Formed by a Replacement Gate...

Self-Aligned Fin Transistor Formed on a Bulk Substrate by Late Fin...

Encapsulation of Closely Spaced Gate Electrode Structures

SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...

Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate

Transistor With Embedded Strain-Inducing Material Formed in Diamond...

Semiconductor Device Comprising Metal Gates and Semiconductor Resis...

SEMICONDUCTOR DEVICE COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTU...

Semiconductor Device Comprising Metal Gate Structures Formed by a R...

Replacement Gate Approach for High-K Metal Gate Stacks by Avoiding...

CONTACT BARS WITH REDUCED FRINGING CAPACITANCE IN A SEMICONDUCTOR D...