Anirban Roy

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory with one-time programmable (OTP) cells
- Patent number 12,224,024
- Issue date Feb 11, 2025
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with end of life margi...
- Patent number 12,094,510
- Issue date Sep 17, 2024
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanosheet device with different gate lengths in same stack
- Patent number 12,009,267
- Issue date Jun 11, 2024
- NXP B.V.
- Tushar Praful Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reusing memory arrays for physically unclonable function (PUF) gene...
- Patent number 12,001,674
- Issue date Jun 4, 2024
- NXP USA, INC.
- Nihaar N. Mahatme
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanosheet transistors with different gate materials in same stack a...
- Patent number 11,776,856
- Issue date Oct 3, 2023
- NXP B.V.
- Mark Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making nanosheet fringe capacitors or MEMS sensors with d...
- Patent number 11,769,797
- Issue date Sep 26, 2023
- NXP B.V.
- Tushar Praful Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Error rate reduction in a non-volatile memory (NVM), including magn...
- Patent number 11,755,411
- Issue date Sep 12, 2023
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanosheet MEMs sensor device and method of manufacture
- Patent number 11,685,647
- Issue date Jun 27, 2023
- NXP B.V.
- Mark Douglas Hall
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Temperature exposure detection based on memory cell retention error...
- Patent number 11,670,394
- Issue date Jun 6, 2023
- NXP B.V.
- Michiel Jos van Duuren
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making nanosheet local capacitors and nvm devices
- Patent number 11,605,729
- Issue date Mar 14, 2023
- NXP B.V.
- Mark Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with adjustable write parameter
- Patent number 11,581,030
- Issue date Feb 14, 2023
- NXP USA, INC.
- Richard Eguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Error rate reduction in a non-volatile memory (NVM), including magn...
- Patent number 11,379,307
- Issue date Jul 5, 2022
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile random access memory (NVRAM)
- Patent number 11,205,680
- Issue date Dec 21, 2021
- NXP USA, INC.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with selectable hard write
- Patent number 11,056,160
- Issue date Jul 6, 2021
- NXP USA, INC.
- Richard Eguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive random access memory (MRAM) with OTP cells
- Patent number 11,049,539
- Issue date Jun 29, 2021
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory apparatus and method of operating a resistive memo...
- Patent number 10,916,303
- Issue date Feb 9, 2021
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with OTP cells
- Patent number 10,861,524
- Issue date Dec 8, 2020
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory with OTP cells
- Patent number 10,699,764
- Issue date Jun 30, 2020
- NXP USA, INC.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NVM architecture with OTA support
- Patent number 10,642,602
- Issue date May 5, 2020
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic disturb diagnostic system for MRAM
- Patent number 10,573,364
- Issue date Feb 25, 2020
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit having concurrent writes and method therefor
- Patent number 10,559,356
- Issue date Feb 11, 2020
- NXP USA, INC.
- Perry H. Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic attack detection in a magnetic random access memory (MRAM)
- Patent number 10,529,400
- Issue date Jan 7, 2020
- NXP USA, INC.
- Nihaar N. Mahatme
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile random access memory (NVRAM)
- Patent number 10,446,608
- Issue date Oct 15, 2019
- NXP USA, INC.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive non-volatile memory and a method for sensing a memory cel...
- Patent number 10,403,357
- Issue date Sep 3, 2019
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for non-volatile flip flops
- Patent number 10,297,314
- Issue date May 21, 2019
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile RAM system
- Patent number 10,241,683
- Issue date Mar 26, 2019
- NXP USA, INC.
- Frank Kelly Baker
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive non-volatile memory and a method for sensing a memory cel...
- Patent number 10,224,094
- Issue date Mar 5, 2019
- NXP USA, INC.
- Perry Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory repair system and method therefor
- Patent number 10,032,515
- Issue date Jul 24, 2018
- NXP USA, INC.
- Perry H. Pelley
- G11 - INFORMATION STORAGE
Information Patent Grant
Partitioned memory having pipeline writes
- Patent number 9,933,954
- Issue date Apr 3, 2018
- NXP USA, INC.
- Perry H. Pelley
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programmable resistive elements as variable tuning elements
- Patent number 9,935,616
- Issue date Apr 3, 2018
- NXP USA, INC.
- Michael A. Sadd
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION OF MULTIMODAL TRANSISTORS WITH TRANSISTOR FABRICATION S...
- Publication number 20250089359
- Publication date Mar 13, 2025
- NXP USA, Inc.
- Mark Douglas Hall
Information Patent Application
MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS
- Publication number 20240321372
- Publication date Sep 26, 2024
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
REUSING MEMORY ARRAYS FOR PHYSICALLY UNCLONABLE FUNCTION (PUF) GENE...
- Publication number 20240143167
- Publication date May 2, 2024
- NXP USA, Inc.
- Nihaar N. Mahatme
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH END OF LIFE MARGI...
- Publication number 20230410870
- Publication date Dec 21, 2023
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE EXPOSURE DETECTION BASED ON MEMORY CELL RETENTION ERROR...
- Publication number 20230056133
- Publication date Feb 23, 2023
- NXP B.V.
- Michiel Jos van Duuren
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR RATE REDUCTION IN A NON-VOLATILE MEMORY (NVM), INCLUDING MAGN...
- Publication number 20220327020
- Publication date Oct 13, 2022
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Making Nanosheet Fringe Capacitors or MEMS Sensors with D...
- Publication number 20220310786
- Publication date Sep 29, 2022
- NXP B.V.
- Tushar Praful Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet Transistors with Different Gate Materials in Same Stack a...
- Publication number 20220310456
- Publication date Sep 29, 2022
- NXP B.V.
- Mark Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet Device with Different Gate Lengths in Same Stack
- Publication number 20220301936
- Publication date Sep 22, 2022
- NXP B.V.
- Tushar Praful Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet MEMS Sensor Device and Method of Manufacture
- Publication number 20220274828
- Publication date Sep 1, 2022
- NXP B.V.
- Mark Douglas Hall
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Method of Making Nanosheet Local Capacitors and NVM Devices
- Publication number 20220278226
- Publication date Sep 1, 2022
- NXP B.V.
- Mark Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERROR RATE REDUCTION IN A NON-VOLATILE MEMORY (NVM), INCLUDING MAGN...
- Publication number 20220179740
- Publication date Jun 9, 2022
- NXP USA, Inc.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY WITH ADJUSTABLE WRITE PARAMETER
- Publication number 20220020411
- Publication date Jan 20, 2022
- NXP USA, Inc.
- Richard Eguchi
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SELECTABLE HARD WRITE
- Publication number 20210118475
- Publication date Apr 22, 2021
- NXP USA, Inc.
- Richard Eguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE RANDOM ACCESS MEMORY (NVRAM)
- Publication number 20210066392
- Publication date Mar 4, 2021
- NXP USA, Inc.
- ANIRBAN ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY APPARATUS AND METHOD OF OPERATING A RESISTIVE MEMO...
- Publication number 20200211643
- Publication date Jul 2, 2020
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM MEMORY WITH OTP CELLS
- Publication number 20200194048
- Publication date Jun 18, 2020
- NXP USA, Inc.
- Anirban Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ATTACK DETECTION IN A MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20200035284
- Publication date Jan 30, 2020
- NXP USA, Inc.
- NIHAAR N. MAHATME
- G11 - INFORMATION STORAGE
Information Patent Application
NVM Architecture with OTA Support
- Publication number 20190179629
- Publication date Jun 13, 2019
- NXP USA, Inc.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE NON-VOLATILE MEMORY AND A METHOD FOR SENSING A MEMORY CEL...
- Publication number 20190088317
- Publication date Mar 21, 2019
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT HAVING CONCURRENT WRITES AND METHOD THEREFOR
- Publication number 20180366191
- Publication date Dec 20, 2018
- NXP USA, Inc.
- Perry H. PELLEY
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS
- Publication number 20180019735
- Publication date Jan 18, 2018
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS
- Publication number 20170345491
- Publication date Nov 30, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY REPAIR SYSTEM AND METHOD THEREFOR
- Publication number 20170249993
- Publication date Aug 31, 2017
- FREESCALE SEMICONDUCTOR, INC.
- PERRY H. PELLEY
- G11 - INFORMATION STORAGE
Information Patent Application
DIRECT INTERFACE BETWEEN SRAM AND NON-VOLATILE MEMORY
- Publication number 20170220491
- Publication date Aug 3, 2017
- FREESCALE SEMICONDUCTOR, INC.
- PERRY H. PELLEY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE RAM SYSTEM
- Publication number 20170115879
- Publication date Apr 27, 2017
- FREESCALE SEMICONDUCTOR, INC.
- FRANK KELLY BAKER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PARTITIONED MEMORY HAVING PIPELINE WRITES
- Publication number 20170109079
- Publication date Apr 20, 2017
- FREESCALE SEMICONDUCTOR, INC.
- PERRY H. PELLEY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) WITH PROGRAMMABLE RESISTI...
- Publication number 20170062052
- Publication date Mar 2, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTIVE ELEMENTS AS VARIABLE TUNING ELEMENTS
- Publication number 20170063348
- Publication date Mar 2, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. SADD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY (SRAM) WITH PROGRAMMABLE RESISTIVE ELEM...
- Publication number 20170062049
- Publication date Mar 2, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE

Anirban Roy

Person

Patents Grantslast 30 patents

Memory with one-time programmable (OTP) cells

Magnetoresistive random access memory (MRAM) with end of life margi...

Nanosheet device with different gate lengths in same stack

Reusing memory arrays for physically unclonable function (PUF) gene...

Nanosheet transistors with different gate materials in same stack a...

Method of making nanosheet fringe capacitors or MEMS sensors with d...

Error rate reduction in a non-volatile memory (NVM), including magn...

Nanosheet MEMs sensor device and method of manufacture

Temperature exposure detection based on memory cell retention error...

Method of making nanosheet local capacitors and nvm devices

Resistive memory with adjustable write parameter

Error rate reduction in a non-volatile memory (NVM), including magn...

Non-volatile random access memory (NVRAM)

Non-volatile memory with selectable hard write

Magnetoresistive random access memory (MRAM) with OTP cells

Resistive memory apparatus and method of operating a resistive memo...

Magnetoresistive random access memory (MRAM) with OTP cells

MRAM memory with OTP cells

NVM architecture with OTA support

Magnetic disturb diagnostic system for MRAM

Memory circuit having concurrent writes and method therefor

Magnetic attack detection in a magnetic random access memory (MRAM)

Non-volatile random access memory (NVRAM)

Resistive non-volatile memory and a method for sensing a memory cel...

Systems and methods for non-volatile flip flops

Non-volatile RAM system

Resistive non-volatile memory and a method for sensing a memory cel...

Memory repair system and method therefor

Partitioned memory having pipeline writes

Programmable resistive elements as variable tuning elements

Patents Applicationslast 30 patents

INTEGRATION OF MULTIMODAL TRANSISTORS WITH TRANSISTOR FABRICATION S...

MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS

REUSING MEMORY ARRAYS FOR PHYSICALLY UNCLONABLE FUNCTION (PUF) GENE...

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH END OF LIFE MARGI...

TEMPERATURE EXPOSURE DETECTION BASED ON MEMORY CELL RETENTION ERROR...

ERROR RATE REDUCTION IN A NON-VOLATILE MEMORY (NVM), INCLUDING MAGN...

Method of Making Nanosheet Fringe Capacitors or MEMS Sensors with D...

Nanosheet Transistors with Different Gate Materials in Same Stack a...

Nanosheet Device with Different Gate Lengths in Same Stack

Nanosheet MEMS Sensor Device and Method of Manufacture

Method of Making Nanosheet Local Capacitors and NVM Devices

ERROR RATE REDUCTION IN A NON-VOLATILE MEMORY (NVM), INCLUDING MAGN...

RESISTIVE MEMORY WITH ADJUSTABLE WRITE PARAMETER

NON-VOLATILE MEMORY WITH SELECTABLE HARD WRITE

NON-VOLATILE RANDOM ACCESS MEMORY (NVRAM)

RESISTIVE MEMORY APPARATUS AND METHOD OF OPERATING A RESISTIVE MEMO...

MRAM MEMORY WITH OTP CELLS

MAGNETIC ATTACK DETECTION IN A MAGNETIC RANDOM ACCESS MEMORY (MRAM)

NVM Architecture with OTA Support

RESISTIVE NON-VOLATILE MEMORY AND A METHOD FOR SENSING A MEMORY CEL...

MEMORY CIRCUIT HAVING CONCURRENT WRITES AND METHOD THEREFOR

SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS

SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS

MEMORY REPAIR SYSTEM AND METHOD THEREFOR

DIRECT INTERFACE BETWEEN SRAM AND NON-VOLATILE MEMORY

NON-VOLATILE RAM SYSTEM

PARTITIONED MEMORY HAVING PIPELINE WRITES

TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) WITH PROGRAMMABLE RESISTI...

PROGRAMMABLE RESISTIVE ELEMENTS AS VARIABLE TUNING ELEMENTS

STATIC RANDOM ACCESS MEMORY (SRAM) WITH PROGRAMMABLE RESISTIVE ELEM...