Anisur Rahman

Person

Beaverton, AR, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage transistor architectures, processes of forming same, a...
- Patent number 9,865,695
- Issue date Jan 9, 2018
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor architectures, processes of forming same, a...
- Patent number 8,993,401
- Issue date Mar 31, 2015
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile storage element having dual work-function electrodes
- Patent number 8,829,592
- Issue date Sep 9, 2014
- Intel Corporation
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable/re-programmable device in high-k metal gate MOS
- Patent number 8,681,573
- Issue date Mar 25, 2014
- Intel Corporation
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Grant
High-voltage transistor architectures, processes of forming same, a...
- Patent number 8,487,376
- Issue date Jul 16, 2013
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell using BTI effects in high-k metal gate MOS
- Patent number 8,432,751
- Issue date Apr 30, 2013
- Intel Corporation
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming programmable anti-fuse element
- Patent number 8,101,471
- Issue date Jan 24, 2012
- Intel Corporation
- Walid M. Hafez
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ADAPTIVE CLOCK GATING FOR IMPROVING WEAR OUT-INDUCED DUTY CYCLE SHI...
- Publication number 20240235545
- Publication date Jul 11, 2024
- Intel Corporation
- Minki Cho
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE CLOCK GATING FOR IMPROVING WEAR OUT-INDUCED DUTY CYCLE SHI...
- Publication number 20240137016
- Publication date Apr 25, 2024
- Intel Corporation
- Minki Cho
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
High-Voltage Transistor Architectures, Processes of Forming Same, a...
- Publication number 20150206948
- Publication date Jul 23, 2015
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Transistor Architectures, Processes Of Forming Same, A...
- Publication number 20130288444
- Publication date Oct 31, 2013
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE/RE-PROGRAMMABLE DEVICE IN HIGH-K METAL GATE MOS
- Publication number 20130229882
- Publication date Sep 5, 2013
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL USING BTI EFFECTS IN HIGH-K METAL GATE MOS
- Publication number 20120163103
- Publication date Jun 28, 2012
- Walid M. Hafez
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
NON-VOLATILE STORAGE ELEMENT HAVING DUAL WORK-FUNCTION ELECTRODES
- Publication number 20120146124
- Publication date Jun 14, 2012
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-VOLTAGE TRANSISTOR ARCHITECTURES, PROCESSES OF FORMING SAME, A...
- Publication number 20120043609
- Publication date Feb 23, 2012
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WORK FUNCTION GATE STRUCTURES
- Publication number 20110147837
- Publication date Jun 23, 2011
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable fuse and anti-fuse elements and methods of changing co...
- Publication number 20100164603
- Publication date Jul 1, 2010
- Walid M. Hafez
- G11 - INFORMATION STORAGE

Anisur Rahman

Person

Patents Grantslast 30 patents

High-voltage transistor architectures, processes of forming same, a...

High-voltage transistor architectures, processes of forming same, a...

Non-volatile storage element having dual work-function electrodes

Programmable/re-programmable device in high-k metal gate MOS

High-voltage transistor architectures, processes of forming same, a...

Memory cell using BTI effects in high-k metal gate MOS

Method of forming programmable anti-fuse element

Patents Applicationslast 30 patents

ADAPTIVE CLOCK GATING FOR IMPROVING WEAR OUT-INDUCED DUTY CYCLE SHI...

ADAPTIVE CLOCK GATING FOR IMPROVING WEAR OUT-INDUCED DUTY CYCLE SHI...

High-Voltage Transistor Architectures, Processes of Forming Same, a...

High-Voltage Transistor Architectures, Processes Of Forming Same, A...

PROGRAMMABLE/RE-PROGRAMMABLE DEVICE IN HIGH-K METAL GATE MOS

MEMORY CELL USING BTI EFFECTS IN HIGH-K METAL GATE MOS

NON-VOLATILE STORAGE ELEMENT HAVING DUAL WORK-FUNCTION ELECTRODES

HIGH-VOLTAGE TRANSISTOR ARCHITECTURES, PROCESSES OF FORMING SAME, A...

DUAL WORK FUNCTION GATE STRUCTURES

Programmable fuse and anti-fuse elements and methods of changing co...