Anne Lauwers

Person

Aartselaar, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Dual workfunction semiconductor device
- Patent number 7,851,297
- Issue date Dec 14, 2010
- IMEC
- Stefan Jakschik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced diffusion of workfunction modulat...
- Patent number 7,759,748
- Issue date Jul 20, 2010
- IMEC
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a fully silicided gate and devices obtained thereof
- Patent number 7,491,635
- Issue date Feb 17, 2009
- Interuniversitair Microelektronica Centrum
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL WORKFUNCTION SEMICONDUCTOR DEVICE
- Publication number 20090020821
- Publication date Jan 22, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Stefan Jakschik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for manufacturing a CMOS device with dual dielectric layers
- Publication number 20080191286
- Publication date Aug 14, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a doped metal comprising main elect...
- Publication number 20080136030
- Publication date Jun 12, 2008
- Interuniversitair MicroelektronicaCentrum (IMEC)
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor device and semiconductor device...
- Publication number 20080105933
- Publication date May 8, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DOPED METAL-SEMICONDUCTOR COMPOUND REGIONS
- Publication number 20080057685
- Publication date Mar 6, 2008
- Interuniversitair Microelektronica Centrum (IMEC) VZW
- Bartlomiej Jan Pawlak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a fully silicided gate and devices obtained thereof
- Publication number 20070015334
- Publication date Jan 18, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Dual Fully Silicided Gates and Devices with Dual...
- Publication number 20060263961
- Publication date Nov 23, 2006
- Interuniversitair Microelektronica Centrum (IMEC)
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming polycrystalline CoSi2 salicide and products obtai...
- Publication number 20020151170
- Publication date Oct 17, 2002
- Karen Maex
- H01 - BASIC ELECTRIC ELEMENTS

Anne Lauwers

Person

Patents Grantslast 30 patents

Dual workfunction semiconductor device

Semiconductor device with reduced diffusion of workfunction modulat...

Method for forming a fully silicided gate and devices obtained thereof

Patents Applicationslast 30 patents

DUAL WORKFUNCTION SEMICONDUCTOR DEVICE

Methods for manufacturing a CMOS device with dual dielectric layers

Semiconductor device comprising a doped metal comprising main elect...

Method for forming a semiconductor device and semiconductor device...

METHOD FOR FORMING DOPED METAL-SEMICONDUCTOR COMPOUND REGIONS

Method for forming a fully silicided gate and devices obtained thereof

Method for Forming Dual Fully Silicided Gates and Devices with Dual...

Method of forming polycrystalline CoSi2 salicide and products obtai...