Anne Verhulst

Person

Houtvenne, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of operating a pore field-effect transistor sensor for detec...
- Patent number 12,146,873
- Issue date Nov 19, 2024
- Imec VZW
- Anne Verhulst
- G01 - MEASURING TESTING
Information Patent Grant
Layered structure of a P-TFET
- Patent number 10,211,287
- Issue date Feb 19, 2019
- Imec VZW
- Devin Verreck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extension region for tunnel FET
- Patent number 9,704,992
- Issue date Jul 11, 2017
- Imec VZW
- Anne Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterosection tunnel field-effect transistor (TFET)
- Patent number 9,608,094
- Issue date Mar 28, 2017
- Imec VZW
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field effect transistor and method for making thereof
- Patent number 9,318,583
- Issue date Apr 19, 2016
- Imec VZW
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field effect transistor device and method for making the device
- Patent number 9,070,720
- Issue date Jun 30, 2015
- IMEC
- Quentin Smets
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor and methods for manufacturing thereof
- Patent number 8,872,230
- Issue date Oct 28, 2014
- IMEC
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line-tunneling tunnel field-effect transistor (TFET) and manufactur...
- Patent number 8,629,428
- Issue date Jan 14, 2014
- IMEC
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel transistor, logical gate including the transistor, static ra...
- Patent number 8,576,614
- Issue date Nov 5, 2013
- IMEC
- Marc Heyns
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Control of tunneling junction in a hetero tunnel field effect trans...
- Patent number 8,431,924
- Issue date Apr 30, 2013
- IMEC
- Francesca Iacopi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a complementary nanowire tunnel field effec...
- Patent number 8,415,209
- Issue date Apr 9, 2013
- IMEC
- Rita Rooyackers
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel field-effect transistor with gated tunnel barrier
- Patent number 8,404,545
- Issue date Mar 26, 2013
- IMEC
- William G. Vandenberghe
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel field effect transistor with improved subthreshold swing
- Patent number 8,304,843
- Issue date Nov 6, 2012
- IMEC
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a hetero tunnel field effect transistor
- Patent number 8,241,983
- Issue date Aug 14, 2012
- IMEC
- Francesca Iacopi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wavelength-sensitive detector comprising photoconductor units each...
- Patent number 8,232,517
- Issue date Jul 31, 2012
- IMEC
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel effect transistors based on elongate monocrystalline nanostr...
- Patent number 8,148,220
- Issue date Apr 3, 2012
- IMEC
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel field-effect transistor with gated tunnel barrier
- Patent number 8,120,115
- Issue date Feb 21, 2012
- IMEC
- William G. Vandenberghe
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel effect transistors based on elongate monocrystalline nanostr...
- Patent number 8,072,012
- Issue date Dec 6, 2011
- IMEC
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel effect transistors based on silicon nanowires
- Patent number 7,893,476
- Issue date Feb 22, 2011
- IMEC
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wavelength-sensitive detector with elongate nanostructures
- Patent number 7,598,482
- Issue date Oct 6, 2009
- IMEC
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOPORE SENSING DEVICE WITH MULTIPLE SENSING LAYERS
- Publication number 20240210343
- Publication date Jun 27, 2024
- IMEC vzw
- Anne Verhulst
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF OPERATING A PORE FIELD-EFFECT TRANSISTOR SENSOR FOR DETEC...
- Publication number 20230003710
- Publication date Jan 5, 2023
- IMEC vzw
- Anne VERHULST
- G01 - MEASURING TESTING
Information Patent Application
DRAIN EXTENSION REGION FOR TUNNEL FET
- Publication number 20170170314
- Publication date Jun 15, 2017
- IMEC vzw
- Anne Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED STRUCTURE OF A P-TFET
- Publication number 20160104769
- Publication date Apr 14, 2016
- IMEC vzw
- Devin Verreck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSECTION TUNNEL FIELD-EFFECT TRANSISTOR (TFET)
- Publication number 20160064535
- Publication date Mar 3, 2016
- IMEC vzw
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MAKING THE DEVICE
- Publication number 20130334500
- Publication date Dec 19, 2013
- Katholieke Universiteit, K.U. LEUVEN R&D
- Quentin Smets
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR AND METHODS FOR MANUFACTURING THEREOF
- Publication number 20130161696
- Publication date Jun 27, 2013
- IMEC
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL TRANSISTOR, LOGICAL GATE COMPRISING THE TRANSISTOR, STATIC R...
- Publication number 20130064005
- Publication date Mar 14, 2013
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Marc Heyns
- B82 - NANO-TECHNOLOGY
Information Patent Application
CONTROL OF TUNNELING JUNCTION IN A HETERO TUNNEL FIELD EFFECT TRANS...
- Publication number 20120298961
- Publication date Nov 29, 2012
- IMEC
- Francesca Iacopi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE-TUNNELING TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND MANUFACTUR...
- Publication number 20120298959
- Publication date Nov 29, 2012
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER
- Publication number 20120115296
- Publication date May 10, 2012
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- William G. Vandenderghe
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTR...
- Publication number 20120045879
- Publication date Feb 23, 2012
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING A VERTICAL TFET
- Publication number 20110253981
- Publication date Oct 20, 2011
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Rita Rooyackers
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL FIELD EFFECT TRANSISTOR WITH IMPROVED SUBTHRESHOLD SWING
- Publication number 20110079860
- Publication date Apr 7, 2011
- IMEC
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Application
CONTROL OF TUNNELING JUNCTION IN A HETERO TUNNEL FIELD EFFECT TRANS...
- Publication number 20100327319
- Publication date Dec 30, 2010
- IMEC
- Francesca Iacopi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES
- Publication number 20100171025
- Publication date Jul 8, 2010
- IMEC
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES
- Publication number 20090266974
- Publication date Oct 29, 2009
- Anne Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER
- Publication number 20080224224
- Publication date Sep 18, 2008
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- William G. Vandenderghe
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTR...
- Publication number 20080067607
- Publication date Mar 20, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL EFFECT TRANSISTORS BASED ON SILICON NANOWIRES
- Publication number 20080067495
- Publication date Mar 20, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- Anne S. Verhulst
- B82 - NANO-TECHNOLOGY

Anne Verhulst

Person

Patents Grantslast 30 patents

Method of operating a pore field-effect transistor sensor for detec...

Layered structure of a P-TFET

Drain extension region for tunnel FET

Heterosection tunnel field-effect transistor (TFET)

Tunnel field effect transistor and method for making thereof

Tunnel field effect transistor device and method for making the device

Tunnel field-effect transistor and methods for manufacturing thereof

Line-tunneling tunnel field-effect transistor (TFET) and manufactur...

Tunnel transistor, logical gate including the transistor, static ra...

Control of tunneling junction in a hetero tunnel field effect trans...

Method of manufacturing a complementary nanowire tunnel field effec...

Tunnel field-effect transistor with gated tunnel barrier

Tunnel field effect transistor with improved subthreshold swing

Method of making a hetero tunnel field effect transistor

Wavelength-sensitive detector comprising photoconductor units each...

Tunnel effect transistors based on elongate monocrystalline nanostr...

Tunnel field-effect transistor with gated tunnel barrier

Tunnel effect transistors based on elongate monocrystalline nanostr...

Tunnel effect transistors based on silicon nanowires

Wavelength-sensitive detector with elongate nanostructures

Patents Applicationslast 30 patents

NANOPORE SENSING DEVICE WITH MULTIPLE SENSING LAYERS

METHOD OF OPERATING A PORE FIELD-EFFECT TRANSISTOR SENSOR FOR DETEC...

DRAIN EXTENSION REGION FOR TUNNEL FET

LAYERED STRUCTURE OF A P-TFET

HETEROSECTION TUNNEL FIELD-EFFECT TRANSISTOR (TFET)

TUNNEL FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MAKING THE DEVICE

TUNNEL FIELD-EFFECT TRANSISTOR AND METHODS FOR MANUFACTURING THEREOF

TUNNEL TRANSISTOR, LOGICAL GATE COMPRISING THE TRANSISTOR, STATIC R...

CONTROL OF TUNNELING JUNCTION IN A HETERO TUNNEL FIELD EFFECT TRANS...

LINE-TUNNELING TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND MANUFACTUR...

TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER

TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTR...

METHOD OF MANUFACTURING A VERTICAL TFET

TUNNEL FIELD EFFECT TRANSISTOR WITH IMPROVED SUBTHRESHOLD SWING

CONTROL OF TUNNELING JUNCTION IN A HETERO TUNNEL FIELD EFFECT TRANS...

WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES

WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES

TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER

TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTR...

TUNNEL EFFECT TRANSISTORS BASED ON SILICON NANOWIRES